11DEG Search Results

Contextual Info: Available as: RF AMPLIFIER MODEL TM9101 TM 9101,4 Pin TO-8 T4 TN9101, 4 Pin Surface Mount (SM3) FP9101, 4 Pin Flatpack (FP4) BX9101, Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C • Low Noise Figure: 2.4 dB Typical ■ Medium Gain: 15 dB Typical

Contextual Info: RF AMPLIFIER MODEL TM9333 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +50 Typ. Second Order Two Tone Intercept Point. t-44(Typ.) Third Order Two Tone Intercept Point. +30 (Typ.)

HY53C464LS

Abstract: HY53C464
Contextual Info: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

Contextual Info: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm

x-band mmic

Abstract: x-band power TR 0/MAPS-008342-DIE000
Contextual Info: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm

MAMFGM0001

Abstract: X-Band T/R
Contextual Info: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input

x-band mmic phase

Abstract: x-band power TR
Contextual Info: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm

x-band power TR

Contextual Info: MAMF-000002-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 21 dB; Rx Gain = 15 dB Serial Control Data Input

x-band mmic phase

Abstract: MAMF-000003-DIE000 x-band mmic
Contextual Info: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm

HY628400LLG-I

Abstract: DV06 138-884
Contextual Info: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY628100

Contextual Info: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

SAFEA1G96FR0F00

Abstract: murata SAW
Contextual Info: SAW FILTER FOR Band2 Rx Murata part number : SAFEA1G96FR0F00 Package Dimensions Specification Specification Item Nominal Center Frequency(fc) 1.35±0.05 (1) Dot Marking(0.3) (4) 1.05±0.05 (5) DM (3) (0.17) (3) 2-0.25±0.05 (2) (0.075) 5-0.325±0.050

schematic diagram 48V telecom ups

Abstract: 1gm smd 850-984 smd microswitch Loctite 243 Circuit diagram of 12v 10W LED drive rectifier ckt RESISTOR SMD 3R3 ORing fet 48v 5a 12volt dc to 24 volt dc converter schematic
Contextual Info: Computing & Communications SBU - AC-DC Applications Group 1 Kim Seng Promenade, #10-01, Great World City East Tower, Singapore IR5001 Universal ORing Controller IRAC5001-HS48V Demo Board User’s Guide Rev. 1.1 25 July 2005 Rev1.1 07/25/2005 International Rectifier

Contextual Info: MAMF-000002-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 21 dB; Rx Gain = 15 dB Serial Control Data Input

Contextual Info: Using the Catalog Specifications to Determine MMIC Reliability AN-60-030 Specification pages for MMIC (Microwave Monolithic Integrated Circuit) amplifiers in the Mini-Circuits catalog contain graphs of typical MTTF (Mean-Time-To-Failure) as a function of Junction Temperature. To use one of these graphs it is necessary to know the

SAW DPX

Abstract: SAYFP1G88CA0B00 SAW DPX band2 SAYF murata SAW
Contextual Info: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW DPX FOR UMTS BAND2 Murata part number :SAYFP1G88CA0B00 Package Dimensions

SMD c015

Abstract: MURATA SAW 5970 SAWES 21DB5
Contextual Info: SAW FILTER FOR GSM1800/GSM1900 Rx Murata part number : SAWES1G84CQ0F00 (fc=1842.5MHz) Feature 1. Dual type 2. Small SMD package (2.5x2.0mm package) 3. Low Insertion Loss (2.5 dB max.) 4. Balance type (50Ω//150Ω) Test Circuit 50Ω 4 3 2 1 S.S.G. 5 6

MURATA SAW 1960MHZ

Abstract: SAWES881MCU2F00 SAWES murata SAW
Contextual Info: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWES881MCU2F00 (fc=881.5MHz) Feature 1. Small SMD package (2.5x2.0mm package) 2. Dual type 3. Balance type (50Ω//150Ω) 4. Low Insertion Loss (2.0 dB max.) Test Circuit 50Ω 5 4 3 2 1 S.S.G. 6 7

MAMF-000004-DIE000

Abstract: x-band mmic x-band mmic phase x-band power TR 0/MAPS-008342-DIE000
Contextual Info: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm

HY628100ALP

Contextual Info: HYUNDAI H Y 6 2 8 1 O O A S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

MAMFGM0001-DIE

Abstract: x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R MAMFGM0001-DIE000
Contextual Info: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev C Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input

Contextual Info: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm

MAMFGM0001-DIE

Abstract: x-band mmic x-band power TR
Contextual Info: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input

SAYFP1G88CA0B00

Abstract: sayfp1g88 SAYF murata SAW
Contextual Info: SAW DPX FOR UMTS BAND2 Murata part number :SAYFP1G88CA0B00 Package Dimensions 6 Item (9) (5) (4) S 3 0 Dot Marking(0.3) (2) Absolute Attenuation 1) 0.1 to (3) 0.55max. (1) (0.075) (1) (2) (3) (0.075) (C0.15) (0.155) 25±2°C typ. 1880MHz 3.4 dB max. 3.4 dB max.