x-band mmic core chip
Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase , layout of the final configuration are presented below. The MMIC consists of a six-bit phase shifter , paper describes the first pass design success for an X-band control MMIC consisting of multi-bit phase , . A discussion of the merits of multifunction MMIC integration using MSAG® Process 5 will be
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2002 - MA03501D
Abstract: x-band mmic
Text: V 1.00 MA03501D X-Band Gain/ Phase Control MMIC 8.0 11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , V1.00 X-Band Serial Input Gain/ Phase Control MMIC 2/7 MA03501D Electrical Characteristics , information. V1.00 X-Band Serial Input Gain/ Phase Control MMIC 3/7 MA03501D Recommended , sheets and product information. V1.00 X-Band Serial Input Gain/ Phase Control MMIC 4/7
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MA03501D
MA03501D
x-band mmic
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2002 - x-band MMIC
Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
Text: RO-P-DS-3004 - - MA03501D X-Band Gain/ Phase Control MMIC 8.0 11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , RO-P-DS-3004 - - X-Band Serial Input Gain/ Phase Control MMIC 2/7 MA03501D Electrical , . RO-P-DS-3004 - - X-Band Serial Input Gain/ Phase Control MMIC 3/7 MA03501D Recommended , and product information. RO-P-DS-3004 - - X-Band Serial Input Gain/ Phase Control MMIC 4/7
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RO-P-DS-3004
MA03501D
MA03501D
x-band MMIC
X band 5-bit phase shifter
MMIC X-band amplifier
x-band mmic phase
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2002 - x-band mmic
Abstract: DA10 DA11 MA03503D
Text: V 1.00 MA03503D X-Band Gain/ Phase Control MMIC 8.0 11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , shifter/ attenuator/buffer amplifier MMIC . The on-chip driver circuitry allows for control of the 6 phase , dB 1. TB = MMIC Base Temperature V1.00 X-Band Parallel Input Gain/ Phase Control MMIC 2/7 , additional data sheets and product information. V1.00 X-Band Parallel Input Gain/ Phase Control MMIC
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MA03503D
MA03503D
x-band mmic
DA10
DA11
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2007 - MAMFGM0001-DIE
Abstract: x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R MAMFGM0001-DIE000
Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product is , Thermal Resistance MMIC Base Temperature Symbol Min Typ Max Unit VDD 4.8 5.0 , reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC * VDD * I DQ Electrical
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MAMFGM0001-DIE
MAMFGM0001-DIE000
MAMFGM0001-DIE
x-band mmic
x-band power TR
MMIC X-band amplifier
X-Band T/R
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2006 - MAMFGM0001
Abstract: X-Band T/R
Text: control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMFGM0001-DIE Rev B Preliminary Datasheet Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC , outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC
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MAMFGM0001-DIE
MAMFGM0001-DIE000
MAMFGM0001
X-Band T/R
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x-band power transistor
Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: ). Figure 4 shows an XBand control MMIC which integrates a 6-bit phase shifter, a 5 , MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device
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MAMF-000002-DIE000
Abstract: MMIC X-band amplifier x-band mmic x-band power TR 0/MAPS-008342-DIE000
Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product , TJ 170 ºC MMIC Base Temperature TB Note 3 ºC 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC* VDD * IDQ
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MAMF-000002-DIE000
MAMF-000002-DIE000
MMIC X-band amplifier
x-band mmic
x-band power TR
0/MAPS-008342-DIE000
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x-band microwave fet
Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: single-sideband balanced mixers). Figure 4 shows an X-Band control MMIC which integrates a 6-bit phase shifter, a , GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently
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2007 - x-band mmic
Abstract: x-band power TR 0/MAPS-008342-DIE000
Text: , Relative Phase , MSB Gate Supply Current Drain Supply Current Logic Supply Current 2 4. TB = MMIC Base , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , Reliability Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This
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MAMF-000003-DIE000
MAMF-000003-DIE000
x-band mmic
x-band power TR
0/MAPS-008342-DIE000
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MAMF-000004-DIE000
Abstract: x-band mmic x-band mmic phase x-band power TR 0/MAPS-008342-DIE000
Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter , -000004-DIE000 is a 3-port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the , JC 28.4 °C/W Junction Temperature TJ 170 ºC MMIC Base Temperature TB Note 3 ºC 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC
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MAMF-000004-DIE000
MAMF-000004-DIE000
x-band mmic
x-band mmic phase
x-band power TR
0/MAPS-008342-DIE000
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MAMFGM0001-DIE
Abstract: x-band mmic x-band power TR
Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product is , Logic Low Voltage Clock Frequency Thermal Resistance Junction Temperature MMIC Base Temperature , 170 Note 3 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC
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MAMFGM0001-DIE
MAMFGM0001-DIE000
MAMFGM0001-DIE
x-band mmic
x-band power TR
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x-band mmic phase
Abstract: MAMF-000003-DIE000 x-band mmic
Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter , -000003-DIE000 is a 3-port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the , Junction Temperature TJ 25.6 170 °C/W ºC MMIC Base Temperature TB Note 3 ºC 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170
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MAMF-000003-DIE000
MAMF-000003-DIE000
x-band mmic phase
x-band mmic
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2007 - x-band mmic phase
Abstract: x-band power TR
Text: Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF-000004-DIE000 Preliminary Datasheet Rev B Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product is fully , Logic Low Voltage Clock Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL
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MAMF-000004-DIE000
MAMF-000004-DIE000
x-band mmic phase
x-band power TR
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2007 - x-band power TR
Abstract: No abstract text available
Text: control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF-000002-DIE000 Rev B Preliminary Datasheet Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC TB Min 4.8 -5.2 -5.2 , reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC* V DD * IDQ Electrical
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MAMF-000002-DIE000
MAMF-000002-DIE000
x-band power TR
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2006 - Not Available
Abstract: No abstract text available
Text: Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , Reliability Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This , Preliminary Datasheet Max 5.2 -4.8 -4.8 5.0 0.4 Unit V V V V V MHz °C/W 170 Note 3 ºC ºC MMIC Base
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MAMF-000004-DIE000
MAMF-000004-DIE000
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2006 - Not Available
Abstract: No abstract text available
Text: control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF-000002-DIE000 Rev A Preliminary Datasheet Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC , . Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170
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MAMF-000002-DIE000
MAMF-000002-DIE000
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2006 - Not Available
Abstract: No abstract text available
Text: Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , Reliability Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This , Logic Low Voltage Clock Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol
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MAMF-000003-DIE000
MAMF-000003-DIE000
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dual-gate
Abstract: No abstract text available
Text: output power Dual-gate for precise output power control Good input SWR (1.5:1 for packaged MMIC ) Well-behaved insertion phase under varying bias High gain to simplify circuit design Better than 25 , . Insertion phase is very well behaved over varying gain conditions. The amplifier is available in either chip , military applications. The bond pads and backside of the MMIC are gold plated to be compatible with eutectic die attach and thermo compression wire-bonding processes. The MMIC is readily assembled using
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TGA8024
TGA8024
dual-gate
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smd transistor M30
Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: first commercially available GaAs MMIC was created by Infineon Technologies in 1981. Continuing , amplifiers, variable gain amplifiers, distributed amplifiers, phase shifters, SPDT switches, mixers , experience with a wide range of standard GaAs FET and MMIC components. Generally there are seven GaAs processing technologies available for MMIC design and production to meet all different kind of customer , /GaAs layers for HEMT Phase Shift Lithography for HEMT 60/110 Process Ion Implanter
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D-81541
smd transistor M30
siemens gaas fet
m30 smd TRANSISTOR
Behet
SIEMENS MICROWAVE RADIO
HBT3
low noise hemt
x-band microwave fet
infineon rf smd package
w-band
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FMM5202ML
Abstract: mmic marking 255 MMic Marking 3 fujitsu oscillator FMM5202M mmic marking A FMM5107VD FMM5202 x-band mmic FMM5107
Text: FMM5202ML - Single Oscillator G a As MMIC FEATURES ⢠Integrateci Monolithic Oscillator ⢠Single Frequency Operation ⢠Ultra-Low Phase Noise: -90dBc/Hz (Typ.) ⢠Small Size 6-Pin Plastic Package for SMT Applications DESCRIPTION The FMM5202ML is a GaAs single frequency oscillator MMIC with low phase noise for use in X-Band DBS applications. It is designed to operate with the FMM5107VD downconverter MMIC . Fujitsu , FMM5202ML Single Oscillator G a As MMIC Figure 1. RF CHARACTERISTICS MEASUREMENT CIRCUIT Figure 2. PHASE
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FMM5202ML
-90dBc/Hz
FMM5107VD
FCSI0598M200
mmic marking 255
MMic Marking 3
fujitsu oscillator
FMM5202M
mmic marking A
FMM5202
x-band mmic
FMM5107
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STM-64
Abstract: CR-9095
Text: clock and eliminates unwanted jitter. The CR-9095 unit is comprised of MMIC amplifiers, an XOR differentiator, a high Q DR filter and a 360 degree X-band phase shifter. The specified input and output power is achieved with several MMIC amplifiers specified. The 360 degree phase shifter is currently , Harmonic -20 dBc Phase Stability ±5 nd Data Rate Select 0/-5 -10 ±10 dB pS
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OC-192/SDH,
STM-64
CR-9095
STM-64
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2014 - sspa transmitter x band
Abstract: No abstract text available
Text: circuit integration techniques. These products Th incorporate state of the art GaAs and GaN MMIC devices , rch (SBIR) Research Contract Awards Announced s QuinStar has recently received three Phase I and two Phase II SBIR awards from the US Air Force and NASA. The Air Force research award is for the , arena. QuinStar has received a Phase I STTR contract from US Defense Advanced Research Programs Agency , with a research institution in Phase I and Phase II. STTR's most important role is to bridge the gap
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1980s
sspa transmitter x band
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2004 - FMM5061VF
Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by
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FMM5061VF
FMM5061VF
x-band power amplifier
ED-4701
x-Band High Power Amplifier
eudyna GaAs FET Amplifier
x-band mmic
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2005 - EMM5068VU
Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT
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ES/EMM5068VU
EMM5068VU
x-band power amplifier
610 108 001
ED-4701
RO4003
MMIC X-band amplifier
1300M
CLASS D WITH 494 POWER amplifier diagram
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