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    x-band mmic phase Datasheets

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    Part ECAD Model Manufacturer Description Download Buy
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S141AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Phase Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation

    x-band mmic phase Datasheets Context Search

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    x-band mmic core chip

    Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
    Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase , layout of the final configuration are presented below. The MMIC consists of a six-bit phase shifter , paper describes the first pass design success for an X-band control MMIC consisting of multi-bit phase , . A discussion of the merits of multifunction MMIC integration using MSAG® Process 5 will be


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    2002 - MA03501D

    Abstract: x-band mmic
    Text: V 1.00 MA03501D X-Band Gain/ Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , V1.00 X-Band Serial Input Gain/ Phase Control MMIC 2/7 MA03501D Electrical Characteristics , information. V1.00 X-Band Serial Input Gain/ Phase Control MMIC 3/7 MA03501D Recommended , sheets and product information. V1.00 X-Band Serial Input Gain/ Phase Control MMIC 4/7


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    PDF MA03501D MA03501D x-band mmic

    2002 - x-band MMIC

    Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
    Text: RO-P-DS-3004 - - MA03501D X-Band Gain/ Phase Control MMIC 8.0 ­11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , RO-P-DS-3004 - - X-Band Serial Input Gain/ Phase Control MMIC 2/7 MA03501D Electrical , . RO-P-DS-3004 - - X-Band Serial Input Gain/ Phase Control MMIC 3/7 MA03501D Recommended , and product information. RO-P-DS-3004 - - X-Band Serial Input Gain/ Phase Control MMIC 4/7


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    PDF RO-P-DS-3004 MA03501D MA03501D x-band MMIC X band 5-bit phase shifter MMIC X-band amplifier x-band mmic phase

    2002 - x-band mmic

    Abstract: DA10 DA11 MA03503D
    Text: V 1.00 MA03503D X-Band Gain/ Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , shifter/ attenuator/buffer amplifier MMIC . The on-chip driver circuitry allows for control of the 6 phase , dB 1. TB = MMIC Base Temperature V1.00 X-Band Parallel Input Gain/ Phase Control MMIC 2/7 , additional data sheets and product information. V1.00 X-Band Parallel Input Gain/ Phase Control MMIC


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    PDF MA03503D MA03503D x-band mmic DA10 DA11

    2007 - MAMFGM0001-DIE

    Abstract: x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R MAMFGM0001-DIE000
    Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product is , Thermal Resistance MMIC Base Temperature Symbol Min Typ Max Unit VDD 4.8 5.0 , reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC * VDD * I DQ Electrical


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    PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001-DIE x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R

    2006 - MAMFGM0001

    Abstract: X-Band T/R
    Text: control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMFGM0001-DIE Rev B Preliminary Datasheet Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC , outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC


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    PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001 X-Band T/R

    x-band power transistor

    Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
    Text: ). Figure 4 shows an XBand control MMIC which integrates a 6-bit phase shifter, a 5 , MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device


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    MAMF-000002-DIE000

    Abstract: MMIC X-band amplifier x-band mmic x-band power TR 0/MAPS-008342-DIE000
    Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product , TJ 170 ºC MMIC Base Temperature TB Note 3 ºC 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC* VDD * IDQ


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    PDF MAMF-000002-DIE000 MAMF-000002-DIE000 MMIC X-band amplifier x-band mmic x-band power TR 0/MAPS-008342-DIE000

    x-band microwave fet

    Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
    Text: single-sideband balanced mixers). Figure 4 shows an X-Band control MMIC which integrates a 6-bit phase shifter, a , GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently


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    2007 - x-band mmic

    Abstract: x-band power TR 0/MAPS-008342-DIE000
    Text: , Relative Phase , MSB Gate Supply Current Drain Supply Current Logic Supply Current 2 4. TB = MMIC Base , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , Reliability Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This


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    PDF MAMF-000003-DIE000 MAMF-000003-DIE000 x-band mmic x-band power TR 0/MAPS-008342-DIE000

    MAMF-000004-DIE000

    Abstract: x-band mmic x-band mmic phase x-band power TR 0/MAPS-008342-DIE000
    Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter , -000004-DIE000 is a 3-port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the , JC 28.4 °C/W Junction Temperature TJ 170 ºC MMIC Base Temperature TB Note 3 ºC 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC


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    PDF MAMF-000004-DIE000 MAMF-000004-DIE000 x-band mmic x-band mmic phase x-band power TR 0/MAPS-008342-DIE000

    MAMFGM0001-DIE

    Abstract: x-band mmic x-band power TR
    Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product is , Logic Low Voltage Clock Frequency Thermal Resistance Junction Temperature MMIC Base Temperature , 170 Note 3 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC


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    PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001-DIE x-band mmic x-band power TR

    x-band mmic phase

    Abstract: MAMF-000003-DIE000 x-band mmic
    Text: Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter , -000003-DIE000 is a 3-port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the , Junction Temperature TJ 25.6 170 °C/W ºC MMIC Base Temperature TB Note 3 ºC 2. Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170


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    PDF MAMF-000003-DIE000 MAMF-000003-DIE000 x-band mmic phase x-band mmic

    2007 - x-band mmic phase

    Abstract: x-band power TR
    Text: Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF-000004-DIE000 Preliminary Datasheet Rev B Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This product is fully , Logic Low Voltage Clock Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL


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    PDF MAMF-000004-DIE000 MAMF-000004-DIE000 x-band mmic phase x-band power TR

    2007 - x-band power TR

    Abstract: No abstract text available
    Text: control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF-000002-DIE000 Rev B Preliminary Datasheet Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC TB Min 4.8 -5.2 -5.2 , reduce product reliability. 3. Maximum MMIC Base Temperature = 170°C- JC* V DD * IDQ Electrical


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    PDF MAMF-000002-DIE000 MAMF-000002-DIE000 x-band power TR

    2006 - Not Available

    Abstract: No abstract text available
    Text: Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , Reliability Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This , Preliminary Datasheet Max 5.2 -4.8 -4.8 5.0 0.4 Unit V V V V V MHz °C/W 170 Note 3 ºC ºC MMIC Base


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    PDF MAMF-000004-DIE000 MAMF-000004-DIE000

    2006 - Not Available

    Abstract: No abstract text available
    Text: control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF-000002-DIE000 Rev A Preliminary Datasheet Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6 , Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC , . Operation outside of these ranges may reduce product reliability. 3. Maximum MMIC Base Temperature = 170


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    PDF MAMF-000002-DIE000 MAMF-000002-DIE000

    2006 - Not Available

    Abstract: No abstract text available
    Text: Control Chip, X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , Reliability Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. This , Logic Low Voltage Clock Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol


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    PDF MAMF-000003-DIE000 MAMF-000003-DIE000

    dual-gate

    Abstract: No abstract text available
    Text: output power Dual-gate for precise output power control Good input SWR (1.5:1 for packaged MMIC ) Well-behaved insertion phase under varying bias High gain to simplify circuit design Better than 25 , . Insertion phase is very well behaved over varying gain conditions. The amplifier is available in either chip , military applications. The bond pads and backside of the MMIC are gold plated to be compatible with eutectic die attach and thermo compression wire-bonding processes. The MMIC is readily assembled using


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    PDF TGA8024 TGA8024 dual-gate

    smd transistor M30

    Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
    Text: first commercially available GaAs MMIC was created by Infineon Technologies in 1981. Continuing , amplifiers, variable gain amplifiers, distributed amplifiers, phase shifters, SPDT switches, mixers , experience with a wide range of standard GaAs FET and MMIC components. Generally there are seven GaAs processing technologies available for MMIC design and production to meet all different kind of customer , /GaAs layers for HEMT Phase Shift Lithography for HEMT 60/110 Process Ion Implanter


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    PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band

    FMM5202ML

    Abstract: mmic marking 255 MMic Marking 3 fujitsu oscillator FMM5202M mmic marking A FMM5107VD FMM5202 x-band mmic FMM5107
    Text: FMM5202ML - Single Oscillator G a As MMIC FEATURES • Integrateci Monolithic Oscillator • Single Frequency Operation • Ultra-Low Phase Noise: -90dBc/Hz (Typ.) • Small Size 6-Pin Plastic Package for SMT Applications DESCRIPTION The FMM5202ML is a GaAs single frequency oscillator MMIC with low phase noise for use in X-Band DBS applications. It is designed to operate with the FMM5107VD downconverter MMIC . Fujitsu , FMM5202ML Single Oscillator G a As MMIC Figure 1. RF CHARACTERISTICS MEASUREMENT CIRCUIT Figure 2. PHASE


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    PDF FMM5202ML -90dBc/Hz FMM5107VD FCSI0598M200 mmic marking 255 MMic Marking 3 fujitsu oscillator FMM5202M mmic marking A FMM5202 x-band mmic FMM5107

    STM-64

    Abstract: CR-9095
    Text: clock and eliminates unwanted jitter. The CR-9095 unit is comprised of MMIC amplifiers, an XOR differentiator, a high Q DR filter and a 360 degree X-band phase shifter. The specified input and output power is achieved with several MMIC amplifiers specified. The 360 degree phase shifter is currently , Harmonic -20 dBc Phase Stability ±5 nd Data Rate Select 0/-5 -10 ±10 dB pS


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    PDF OC-192/SDH, STM-64 CR-9095 STM-64

    2014 - sspa transmitter x band

    Abstract: No abstract text available
    Text: circuit integration techniques. These products Th incorporate state of the art GaAs and GaN MMIC devices , rch (SBIR) Research Contract Awards Announced s QuinStar has recently received three Phase I and two Phase II SBIR awards from the US Air Force and NASA. The Air Force research award is for the , arena. QuinStar has received a Phase I STTR contract from US Defense Advanced Research Programs Agency , with a research institution in Phase I and Phase II. STTR's most important role is to bridge the gap


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    PDF 1980s sspa transmitter x band

    2004 - FMM5061VF

    Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
    Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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    PDF FMM5061VF FMM5061VF x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic

    2005 - EMM5068VU

    Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
    Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT


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    PDF ES/EMM5068VU EMM5068VU x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
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