11DEC08 Search Results
11DEC08 Datasheets Context Search
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1367198-1Contextual Info: 107-68667 Packaging Specification 11Dec08 Rev K Z-DOK CONN. 1. PURPOSE 目的 Define the packaging specifiction and packaging method of Z-DOK CONN. 订定 Z-DOK CONN. 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 Product Description |
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11dec0815tube18tubeqr-me-030b+1 | |
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Contextual Info: NOTES: 1. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS,SILVER PLATING INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE: 1500 VRMS, MIN. MECHANICAL: A. DURABILITY: |
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jan--10 | |
BZ-2RW80722555105-A2
Abstract: 05A2 AQC9700 L307 1016-78
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bz-2rw80722555105-a2aqc9700c067209ic093346+6 | |
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Contextual Info: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency |
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20ut0420wt04fno-251aao-252aa+1 | |
51741-10002406CC
Abstract: SFP10
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sfp1050-12bg1050-wattcorrected003111-dec-08+3 | |
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Contextual Info: VSK.41., VSK.56. Series Vishay High Power Products ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A FEATURES • High voltage • Industrial standard package • UL pending • 3500 VRMS isolating voltage • Low thermal resistance |
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18-jul-08 | |
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Contextual Info: 2SD1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage |
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2sd1664500ma/50maot-89100mhz+1 | |
1R5000
Abstract: VCS1625Z Y1607
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vcs1625z18-jul-081r5000y1607 | |
VSMP0603Contextual Info: VSMP0603 Z-Foil Vishay Foil Resistors Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with Temperature Coefficient of Resistance of ± 0.05 ppm/°C, Load Life Stability to ± 0.005 % (50 ppm) and ESD Immunity up to 25 kV FEATURES Vishay Foil resistors are not restricted to standard |
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vsmp06031k23418-jul-08 | |
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Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <53m Ω@V GS =10V *Rugged and Reliable *Simple Drive Requirement |
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wtc2305ot-2316-may-05 | |
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Contextual Info: R E V IS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER, SILVER PLATING INSULATOR - PTFE ELECTRICAL: 2 A. IMPEDANCE: 50 OHM C. FREQUENCY RANGE: DC 0 - 1 1 GHz C. DIELECTRIC WITHSTANDING VOLTAGE: |
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rd-dm1105-mar-0811-dec-0821-dec-09+5 | |
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Contextual Info: FND850-12DRG Front-End Preliminary Data Sheet DC Input, 12V Output, 850 Watts Features • RoHS compliant for all six substances • Universal input voltage range 36-75 VDC • High power density, 15.15 Watts/cubic inch • 1U or 2U height configurations |
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fnd850-12drgmcd1009611-dec-08 | |
KTA1664Contextual Info: KTA1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5.0 |
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kta1664ot-89100ma100mhz+1 | |
40118
Abstract: T96R106 T96R
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mil-prf-5536518-jul-0840118t96r106+1 | |
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Contextual Info: VSMP0 6 0 3 Z- Foil FEATURES • Temperature coefficient of resistance TCR : o 0.05 ppm/°C typical (0 °C to + 60 °C) o 0.2 ppm/°C typical (- 55 °C to + 125 °C, + 25 °C ref.) • Tolerance: to ± 0.01% • Power coefficient of resistance (PCR) “∆R due to self heating”: ± 5 ppm |
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vsmp06032345k11-dec-08vmn-pt0125- | |
20CWT10Fn
Abstract: 20CUT 20CUT10 94651
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20cut1020cwt10fno-251aao-252aa+3 | |