WTC2305 Search Results

WTC2305 Datasheets (2)

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Weitron

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
WTC2305		Weitron	P-Channel Enhancement Mode Power MOSFET	Original	PDF	667.76KB	6
WTC2305A		Weitron	P-Channel Enhancement Mode Power MOSFET	Original	PDF	405.31KB	6

WTC2305 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SOT-23 marking 352 MOSFET Abstract: WTC2305 MOSFET P-Channel sot-23 DSS SOT23 Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <70m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	wtc2305 ot-23 300us 05-jun-09 +3sot-23 marking 352 mosfet mosfet p-channel sot-23 dss sot23	PDF
WTC2305 Abstract: 2305 SOT-23 RD36 Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE * “G” Lead Pb -Free -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <53m Ω@V GS =10V Rugged and Reliable	Original	wtc2305 ot-23 16-may-05 2305 sot-23 +1rd36	PDF
Contextual Info: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 Super High Dense Cell Design For Low R DS ON R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	wtc2305a sc-59 23-may-05 26-nov-08	PDF
2305a Abstract: WTC2305A wtc2305a2305a ID32A Contextual Info: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 Super High Dense Cell Design For Low R DS ON R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	wtc2305a ot-23 23-may-05 2305a +2wtc2305a2305a id32a	PDF
Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <53m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	wtc2305 ot-23 16-may-05	PDF
2305a Abstract: WTC2305A Contextual Info: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable	Original	wtc2305a ot-23 23-may-05 2305a	PDF
WTC2305 Abstract: 24AUG ID35A Contextual Info: WTC2305DS P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <68m Ω@V GS =-4.5V Rugged and Reliable *Simple Drive Requirement	Original	wtc2305ds ot-23 24-aug-09 wtc2305 +224aug id35a	PDF
2305 SOT-23 Abstract: WTC2305 2a 13.1 Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <53m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	wtc2305 ot-23 16-may-05 2305 sot-23 +12a 13.1	PDF