117 S TRANSISTOR Search Results

3055t

Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
Contextual Info: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50

v16070

Contextual Info: Ordering number: EN 3115 FC 117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

sgs110

Abstract: SGS116
Contextual Info: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

T1P112

Contextual Info: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117

ic 4604

Abstract: lvco 251C 2SB1172 2SB1172A 2SD1742 2sb1742 t150t
Contextual Info: 2SB1172, 2SB1172A Power Transistors 2 S B 1 1 7 2 , 2SB 117 2A Silicon PNP Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S D 1 7 4 2 , 2 S B 1 7 4 2 Package Dimensions Unit • mm • Features 3-7 max, 7.3max. 3.2max. • High DC current gain hpE and good linearity

Contextual Info: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C

ESM117

Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
Contextual Info: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique

ha2526

Abstract: HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5
Contextual Info: HARRIS SEMICOND SECTOR m W blE ] • 43G2B71 004bSM5 117 H H A S HA-2620, HA-2622 HARRIS HA-2625 SEMICONDUCTOR Very Wideband, Uncompensated Operational Amplifiers RN M SO B3 Features Description • Gain Bandwidth Product Ay 2 5). 100MHz • High Input Im pedance.500MQ

SSM2116

Abstract: ssm-2116 018t power SSM2018TR SM2018T 018T SM2118T SSM2018 IC 7470 pin configuration
Contextual Info: Trimless Voltage Controlled Amplifiers A N ALO G D E V IC E S SSM2018T/SSM2118T* FUNCTIONAL BLOCK DIAGRAMS FEATURES 117 dB Dynamic Range 0.006% Typical THD+N l@ 1 kHz, Unity Gain 140 dB Gain Range No External Trimming Required Differential Inputs Complementary Gain Outputs

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

TIP111

Contextual Info: TYPES TIP110, TIPTI1, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP115,TIP116,TIP 117 •' CD CO c 5 r » High S O i Capability, 40 V and 1.25 A • 50 W at 25°C Case Temperature • Min hFE of 500 at 4 V, 2 A

westinghouse transistors

Abstract: tic 2116 B WESTINGHOUSE transistor 2N3442 transistor 2n3442
Contextual Info: “□ o s: m m x T D 64-673 Page 3 > Silicon Power Transistors J E D E C Type 2N3442 Westinghouse cn -*J N sO For Switching, Amplifier and Regulator Applications 10 Amperes, 117 Watts O' ISJ Application The Westinghouse 2N3442 is an N PN dif­ fused transistor. This general-purpose tran­

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

Contextual Info: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range

Contextual Info: Maxi Family 150 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Absolute Maximum Ratings Features • DC input range: 100 – 200 V • Isolated output • Encapsulated circuitry for shock and • • •

Contextual Info: Maxi Family 150 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Absolute Maximum Ratings Features • DC input range: 100 – 200 V • Isolated output • Encapsulated circuitry for shock and • • •

BDX 71

Abstract: 3055C BD142 40251 C 5039 2N6354
Contextual Info: POWER TRANSISTORS TYPE a: <_ j o a. A 0 9 3 A >h; > > LU O < _u X CO ^E c E ÜJ IL cj ( 3) s> < _o > X <o o LT3 < _u E tz > II O H @ g Ili JZ CM PACKAGE Hometaxial for linear and switching applications O a Ü. BD 142 NPN 50 45 15 12/60 4 1.1 4 117 2N 3055/BDX 10

Contextual Info: Maxi Family 110V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,

Contextual Info: Maxi Family 110V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,

Contextual Info: Maxi Family 300 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S ® CC US US C NRTL US DC-DC Converter Module Absolute Maximum Ratings Features • • • • • • • • • • • • • DC input range: 180 – 375 V Isolated output

Contextual Info: Maxi Family 110 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,

Contextual Info: Maxi Family 110 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,

Contextual Info: Maxi Family 300 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S ® CC US US C NRTL US DC-DC Converter Module Absolute Maximum Ratings Features • • • • • • • • • • • • • DC input range: 180 – 375 V Isolated output

Contextual Info: Maxi Family 300 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S ® CC US US C NRTL US DC-DC Converter Module Absolute Maximum Ratings Features • • • • • • • • • • • • • DC input range: 180 – 375 V Isolated output