115 MOSFET Search Results

sot-363 n-channel mosfet

Abstract: 2N7002DW Small Signal MOSFET
Contextual Info: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol

2N7002T

Abstract: Small Signal MOSFET
Contextual Info: 2N7002T 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

9435DY

Abstract: 1153-B
Contextual Info: LT C 115 9 /LTC 115 9 -3 .3 /LT C 1159-5 l im TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ O TUR€ S D C S C R IP T IO n • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20pA Supply Current in Shutdown

2N7002EGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE

marking 72

Abstract: 10V 50mA zero voltage switch 2N7002T
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2N7002T MOSFET Plastic-Encapsulate Transistors SOT-523 N-Channel FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25℃) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

L2N7002DMT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

L2N7002M3T5G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

marking 72

Abstract: 2N7002T
Contextual Info: SOD-523 Plastic-EncapsulateTransistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

Contextual Info: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

sot88

Abstract: 419B-02
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR

Contextual Info: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

NTMFS4845N

Abstract: NTMFS4845NT1G NTMFS4845NT3G
Contextual Info: NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO-8 Package

702 sot

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60

SMG2310A

Contextual Info: SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS ON =115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the

AA115 diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

9973a

Abstract: J 115 mosfet SSD9973A
Contextual Info: SSD9973A N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS ON 115 mΩ mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD9973A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G S-L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID

Contextual Info: MMBT1031 115 mA, 60V, RDS on =7.5ȍ Elektronische Bauelemente Small Signal MOSFET RoHS Compliant Product SOT-23 N–Channel A FEATURES L 3 . Low on-resistance B S Top View . Fast switching speed 1 . Low-voltage drive V G Drain . Easily designed drive circuits

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

transistor 6c x

Abstract: marking code 6c marking 6C
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage

2N7002L

Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60

Contextual Info: FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to