114OC Search Results

Contextual Info: 3TA0GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA0GK03NB 3TA0GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC

Contextual Info: 3TA100GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA100GK03NB 3TA100GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC

3TA100GK03NB

Abstract: 3TA100GK04NB half bridge
Contextual Info: 3TA100GKxxNB Three Phase Half Bridge Dimensions in mm 1mm = 0.0394" Type 3TA100GK03NB 3TA100GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive

CDFP4-F16

Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
Contextual Info: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)

HCS109MS

Abstract: CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR HCS109
Contextual Info: HCS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

CDFP4-F16

Abstract: HCS193DMSR HCS193HMSR HCS193KMSR HCS193MS
Contextual Info: HCS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

CDFP4-F16

Abstract: HCTS161ADMSR HCTS161AHMSR HCTS161AKMSR HCTS161AMS
Contextual Info: HCTS161AMS Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • Minimum LET for SEU Upsets: >100 MEV-cm2/mg

Contextual Info: HCTS390MS Semiconductor Radiation Hardened Dual Decade Ripple Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)

TA143

Abstract: CDFP4-F16 HCS195DMSR HCS195HMSR HCS195KMSR HCS195MS
Contextual Info: HCS195MS Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW

2502P

Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

MOSFET TSSOP-8

Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

DIODE S4 75a

Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Si6435DQ

Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Contextual Info: 3TA250GKxxNB Three Phase Thyristor Module Half Bridge K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA250GK03NB 3TA250GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions

CDFP4-F16

Abstract: HCTS147DMSR HCTS147HMSR HCTS147KMSR HCTS147MS
Contextual Info: HCTS147MS Radiation Hardened 10-to-4 Line Priority Encoder September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

CDFP4-F16

Abstract: HCS165DMSR HCS165HMSR HCS165KMSR HCS165MS D6512
Contextual Info: HCS165MS Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW

CDFP4-F16

Abstract: HCS161 HCS161DMSR HCS161HMSR HCS161KMSR HCS161MS
Contextual Info: HCS161MS Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

CDFP4-F16

Abstract: HCTS139DMSR HCTS139HMSR HCTS139KMSR HCTS139MS
Contextual Info: HCTS139MS Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)

Truth Table 74161

Abstract: IC 74160 74161 pin diagram and truth table bcd 74160 IC 74161 HCTS160HMSR HCTS160KMSR HCTS160MS CDFP4-F16 HCTS160DMSR
Contextual Info: HCTS160MS Radiation Hardened Synchronous Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day

CDFP4-F16

Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
Contextual Info: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)

CDFP4-F16

Abstract: HCS151DMSR HCS151HMSR HCS151KMSR HCS151MS
Contextual Info: HCS151MS Radiation Hardened 8-Input Multiplexer September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

CDFP4-F16

Abstract: HCTS109DMSR HCTS109HMSR HCTS109KMSR HCTS109MS
Contextual Info: HCTS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: Data Sheet February 1, 2012 EVW010A0B Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 12.0Vdc Output; 10A Output Current Features RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC • Compatible in a Pb-free or SnPb reflow