111IIIII Search Results

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

POWER MODULE SVI 3101 D

Abstract: bc power module svi 3101 d SVI 3206 SVI 3101 POWER MODULE SVI 3101 temperature digital display JUMO Lan M UAA 1004 DP tda 8210 INTERFACING OUTPUT DISPLAYS 8212 TDA 9394
Contextual Info: \ V* %%ŸÎ\ \ k A. ' In December 1973 Intel shipped the first 8-bit, N-channel microprocessor, the 8080. Since then it has become the most widely usea microprocessor in the industry. Applications of the 8080 span from large, intelligent systems terminals to decompression computers for deep sea divers.

Contextual Info: Order this document by MC33157/D MOTOROLA M C 33157 H alf Bridge C ontroller and D river for Industrial Linear Tlibes The MC33157 includes the oscillator circuit and two output channels to control a half-bridge power stage. One of the channels is ground-referenced. The second one is floating to

1K x 8 static ram dip22

Abstract: EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312
Contextual Info: Preliminary User’s Manual TM V850E/CA2 JUPITER 32-/16-bit Romless Microcontroller Hardware µPD703128, µPD703129 Document No. U15839EE1V0UM00 Date Published August 2003  NEC Corporation 2003 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

SO42

Abstract: skn 220 semikron SKN 71 so 32 skn4508
Contextual Info: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*

SMPTE-240M

Abstract: Camera Serial Interface Solid state CCIR ca 152 Solid state CCIR ca 151 schematic diagram of ip camera sensor "frame grabber" rockwell quartzsight
Contextual Info: Advance Information This d o cum e nt contains in fo rm a tio n on a pro d u ct under developm ent. The param etric in fo rm a tio n contains targe t param eters that are subject to change. Bt832 CMOS Camera Video Processor The Bt832 CMOS Camera Video Processor chip connects a Q uartzSight CMOS color

2SC505

Contextual Info: TOSHIBA {DISCRETE/OPTO! 9097250 TOSHIBA 5b DE I ^ Q T T H S O b feC CD ISC RE TE /O PT O 074L2 000741H D f - 2 ? - y 230505"“ SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) 2SC506, Un i t in m m •f? 9.39 MAX HIGH VOLTAGE AMPLIFIER APPLICATIONS. 0 8.4 5 MAX,

PMC131

Abstract: UPD79F CA9H OPERATION MANUAL C28H AND C40H FMC01 C25H uPD70F3080 C67H uPD70F3080GJ-UEU CA6H
Contextual Info: Preliminary User’s Manual TM V850/DB1 AVALON 32-/16-bit Single-Chip Microcontroller Hardware µPD70F3080 µPD703081 Document No. U15011EE2V0UM00 Date Published October 2002  NEC Corporation 2002 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

gg3b

Contextual Info: FINAL COM’L: -15/20 ZI Advanced Micro Devices MACH355-15/20 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 144 Pins in PQFP ■ JTAG, 5-V, in-circult programmable ■ IEEE 1149.1 JTAG testing capability ■ 96 Macrocells ■ 15 ns tpD

pspice model for ttl

Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Contextual Info: m HARRIS RFD7N10LE, RFD7N10LESM RFP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q