1111IN Search Results

Contextual Info: RWDUIT Copper High Voltage Lugs Type lcbh andlcch i 11 111 mm ii mm n i . . in 11 min iron i ifflii i i i n ^ Voltage Lucjs iihiiii i mi imnmiaBiiiiiiiii iiiiiiiiniifii nniiiiiiiii 11 mine m mu m m S iii 11 im 1111in» i i iiiiiiiiih—im• ■ ■ Cwiiniiii—Min»mi— i — iiiim h m in n » i imin iM iM iiB iin iu m B ia if— h i w i i i w i u h i i i m i

103 SSM MARKING

Contextual Info: RN1112,1113 RN1112 U nit in mm S W IT C H IN G , IN V E R T E R C IR C U IT , IN T E R F A C E C IR C U IT A N D D R IV E R C IR C U IT A P P L IC A T IO N S . • • • • 0.8 ± 0.1 W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

Contextual Info: P8> -Ä u L U j- • -ê U JO ^ - © fp à - -J ST Y Y T ^ - NDTE: E L E C T R IC AL S P E C IF IC A T IO N S ; P IN S NDT E L E C T R IC A L L Y CONNECTED ARE DMITTED, l.D INDU CTANCE ( P 6 -J 6 > : ( P l - J D 65 uH TYP @,01V, LOKHz 2.0 DC R E S IS T A N C E

2n4036

Abstract: MOTOROLA TO205AD 2N4037
Contextual Info: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N4036 2N4037 COLLECTOR 3 BASE MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector-Emitter Voltage Rating VCEO -6 5 -4 0 Vdc Collector-Base Voltage

M57S

Abstract: 100-FU
Contextual Info: 6427525 N E C N E C EL EC TR O N I C S INC 98D 19071 ELECTRONICS INC Tfl D DE | b M 2752S D O M O ? ! h l ~ W D C I I fUl I ÍXJ ß W Y ^ P R E U M IÍN A K Y M OS F I E L D E F F E C T ELECTRON DEVICE w w r ' i z f l r - * “ T !f ö H fc U r T U A T iC » ’

Contextual Info: iONY I_CXD2434ATQ Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2434ATQ is an 1C developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. The CXD2434ATQ adds EFS operation

Contextual Info: lO O O p F j 2 K V ELECTRICAL SPECIFICATIONS: 1.0 N D TE S T U RN S RATIO: P 3 - P 5 - P 6 (P 1 -P 4 -P 2 : (J3 -J6 : (J1 -J2 ) 2.0 INDUCTANCE: (P 1 -P 2 (P 3 -P 6 3.0 LEAKAGE INDUCTANCE: 350uH 350uH 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

AL437

Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

27C1000 eprom

Abstract: 27C1000 MBM27C1000-20 Fujitsu MBM27C1000 MBM27C1000 27c1000a MBM27C1001-15 MBM27C1000-15 MBM27C1000-25
Contextual Info: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 A p ril 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) T he Fujitsu M BM 27C1000 EPROM Is a high spee d re a d -o n ly s ta tic m e m o ry th a t is

Contextual Info: [PS - 's n n n n - n n n n - lir r r r ^ 8 > - j s n n r r 'S N. /x . - « in n n n - ÎP2)- -« n n n n - -« m m - ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: 2.0 DC RESISTANCE: P 8 - J 8 P 6 -J6 P 5 -J5 P 2 -J2 3.0 COMMON MODE: P1 —J 1) (P 3 -J3 ) : ( P 4 -J4 ) : (P 7 -J7 )

Contextual Info: NDTESi PINS NDT ELECTRICALLY CONNECTED ARE DMITTED. ELECTRICAL SPECIFICATIONS' 1.0 INDUCTANCE' P1-J1=P2-J2 P4 - J4 = P 5 - J5 i 65 uH 0.01V, 10 KHz, nominal. 2.0 DC RESISTANCE' P l- Jl i .5 ohm MAX P 2 - J2 i .5 ohm MAX P 4 - J4 i .5 ohm MAX P 5 - J5 i .5 ohm MAX

L130C

Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

Contextual Info: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

v.32terbo 16800 19200 modem

Contextual Info: S G S -T H O M S O N ST7543 ly UNIVERSAL MODEM ANALOG FRONT-END UMAFE PR ELIM INA R Y DATA • FULL ECHO CANCELLING CAPABILITY ■ 16-BIT OVERSAM PLING A/D AND D/A CO N ­ VERTERS • Program mable down-sam pling frequency : from 7200 to 16000Hz • Dynam ic range : 84dB

D1275A

Abstract: E 102 M S116T 1115 sire lad D-1275A
Contextual Info: ANALOG DEVICES 28 V/100 W DCyDC Converter with Integral EMI Rlter ADDC02828SA FEATURES 28 V dc Input, 28 V dc @ 3.6 A, 100 W O u tp u t Inte gral EMI Filter Designed to M e e t M IL -S T D -4 6 1 D F U N C T I O N A L B L O C K D IA G R A M Low W e i g h t : 80 G ra m s

h8s64

Abstract: MH8S64AMG-8 MIT-DS-0167-1
Contextual Info: MITSUBISHI LSIs MH8S64AMG-8 536870912-BIT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AMG is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in SOP.

Contextual Info: lOOOpF j 2 K V D C SHIELDo- ELECTRICAL SPECIFICATIONS: 1.0 NDTES TU RN S RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 : (J6 -J3 : (J2 -J1 ) 2.0 INDUCTANCE: (P 6 -P 4 (P 3 -P 1 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

L47C

Abstract: L146C L135 l54c L62C L97C verilog code of prbs pattern generator L71C L235C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC February 2005 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

il1111

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: 2.0 DC RESISTANCE: P 8- J8 = P 7-J7 P 6- J6 = P 3-J3 P 5- J5 = P 4- J4 3.0 DIELECTRIC WITHSTAND: 65 uH TYP @.05V, 10KHz P 3 - J3 : ( P 4- J4) : (P 7 - J7 ) .5 OHM MAX .5 OHM MAX .5 OHM MAX FREQUENCY (MHz) CMA (-dB)

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 T U RN S RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 : (J6 -J3 : (J2 -J1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 (P 3 -P 1

10197

Abstract: M-0128
Contextual Info: lOOOpFj 2 K V 2CT : 1CT —vSUUJU—^ - ÄUUUU—I 1CT • U suuuu- nsuuuo- ELECTRICAL SPECIFICATIONS: NDTES 1,0 TURNS RATID (P6-P5-P4 i (J6 - J3 ) i 2CT I 1CT± 37. (P3-P2-P1) i (J2 - J1 ) I 1CT • 1CT ± 3 / 2.0 INDUCTANCE CP2-P1) 1.0 P IN S WITHDUT ELECT RICA L

Contextual Info: lOOOpF , 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1,0 TURNS RATID P 6 -P 5 -P 4 i ( J 6 -J 3 ) (P 3 -P 2 -P 1 ) i (J 2 -J 1 ) 2,0 INDUCTANCE C J3-J6) 1.0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, i 1.41CT I 1CT± 3 / I 1CT • 1CT ± 3 / i 350uH MIN, 8 0.1V , lOOKHz, 8nA DC Bias

Contextual Info: P IN S l O O O p F ±20'/. 4S<5 o j 2KV NOTES E L E C T R I C A L SPECIFICATIONS* l.D TURNS RATID P 8 - P 6 - P 7 i ( J 6 - J 3 > 1CT i 1 ± 3 '/. (P 2 -P 3 -P L ) : (JE -JL ) 1CT ! 1 ± 37. 2.0 IND UCTAN CE <P7-PB> 1.0 P I N S W I T H O U T E L E C T R I C A L

Contextual Info: 1000 pFj 2K V PINS 4&5 o- ELECTRICAL SPECIFICATIONS* NDTES 1.0 TURNS RATIO P8-P6-P7 i (J6 - J3 ) (PS-P3-PD ! CJ2-J1) 2.0 INDUCTANCE (P7-P8) 1,0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, ! 1CT i 1± 3/ 1CT i 1 ± 37. 350uH MIN. @ 0,1V , lOOKHz, 8mA DC Bias