1100 CHIP RESISTOR NETWORK Search Results

xmxx

Abstract: yageo Phycomp 2322 711
Contextual Info: Product specification – Jul 02, 2009 V.4 Supersedes Date of Mar. 06, 2003 1100 DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC1206 5%, 1% RoHS compliant Product specification Chip Resistor Surface Mount RC SCOPE ORDERING INFORMATION - GLOBAL PART NUMBER & 12NC

Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for W- CDMA base station applications with frequencies from 2110

EPA2116G

Contextual Info: 10Base-T Interface Module with Enhanced CMA and Resistor Network ELECTRONICS INC. EPA2116G • Optimized for AMD/PHY controllers • • Robust construction allows for IR/VP processes • • Complies with or exceeds IEEE 802.3, 10Base-T Requirements • Electrical Parameters @ 25° C

EPE6119G-RC

Abstract: jd 1803 jd 1803 data jd 1803 19 B EPF8125S BCM5201 jd 1803 4 pin EPG4000S EPA1885-6 EPE6119G
Contextual Info: Networking www.pca.com Contents 10Base-T Networking PCA Part No. OCL µH EPA1829C EPA1990A 200 EPA2013D Turns Ratio Package Style Length Width Height 1:1/1:1 16 Pin DIP 1.00 .400 .350 1:1/1:1 16 Pin DIP 1.00 .280 .300 1:1/1:1 16 Pin DIP 1.00 .280 .310 EPE6009S

rn73 Meggitt

Contextual Info: MEGGITT HOLSWORTHY HYBRID CIRCUITS ELECTRONIC ASSEMBLIES PRECISION RESISTORS SMD PRECISION RESISTORS PRECISION NETWORKS High Precision Resistors SMD TYPE RN73 SERIES Sputtered Resistive Metal Film Protective Coat Epoxy Terminations (Nickel & Solder Plating)

transistor c 5936 circuit diagram

Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a

VJ HIFREQ

Abstract: WSBM8518
Contextual Info: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 Proximity Sensor with I2C Interface WSBM8518 Power Metal Strip Battery Shunt Resistor with Molded Enclosure

transistor BD 139

Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a

darlington cascode second stage

Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors

40MHZ

Abstract: ADL5358XCPZ-R7 ADL5358XCPZ-WP ADL5365 ADL5358 TC4 pre amp
Contextual Info: Dual 500-1700MHz Balanced Mixer with LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 500MHz to 1700MHz IF Frequency 40MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB

Contextual Info: Document Number: MRF5S4125N Rev. 0, 1/2007 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with

AD250

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of

MRF5S4125NBR1

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S4125NR1 ATC600B121BT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S4125N Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with

Contextual Info: Dual 900MHz Balanced Mixer with High Side LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 700MHz to 1000MHz IF Frequency 50MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB

J280

Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with

HBPF-0420

Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
Contextual Info: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

w06 transistor

Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
Contextual Info: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

T491C105K050AT

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

mcr63

Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

1100 CHIP RESISTOR NETWORK

Contextual Info: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 Layout Features ♦ ♦ ♦ V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction

4an4

Abstract: IM 153 qsop 16 pcb footprint M50Vm
Contextual Info: In-line surface mount resistor networks • Very high density packaging Smallest thick film network available Saves board space • Low profile • Solid ceramic construction Dendrite free Higher power •"V". • Custom circuits available • Input/outputs available