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    C1825C564J5RACTU Search Results

    C1825C564J5RACTU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    C1825C564J5RACTU
    KEMET Ceramic Capacitors, Capacitors, CAP CER 0.56UF 50V 5% X7R 1825 Original PDF 24
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    C1825C564J5RACTU Price and Stock

    KEMET Corporation

    KEMET Corporation C1825C564J5RACTU

    CAP CER 0.56UF 50V X7R 1825
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    DigiKey C1825C564J5RACTU Tape & Reel 1,000
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    Avnet Americas C1825C564J5RACTU Tape & Reel 16 Weeks 1,000
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    Mouser Electronics C1825C564J5RACTU
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    Newark C1825C564J5RACTU Tape & Reel 1,000
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    C1825C564J5RACTU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original
    MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 PDF

    J307

    Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original
    MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT PDF

    J280

    Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with


    Original
    MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3 J280 MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with


    Original
    MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3 PDF