110 W 30PF Search Results

zcp n

Contextual Info: CYPRESS Features A u to m a tic pow er-dow n w hen d eselected • • C M O S fo r o p tim u m sp eed /p o w er H ig h speed — 15 ns Low activ e pow er — 440 m W co m m ercial — 550 raW (m ilitary ) Low sta n d b y pow er — 110 m W • 2K x 8 Static RAM

99C641

Contextual Info: Am99C641/Am99CL641 LÌ 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • H igh-perform ance C M O S circuit High Speed - a ccess tim es a s Single 5-V ± 1 0 % pow er-supply Low pow e r - 550 m W active 110 m W T T L - Standby

CY6116-55PC

Abstract: CY6116 CY6116-35
Contextual Info: CY6116 —1 2,048 x 8 Static R/W RAM ss £>' mm CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — 35 ns • Low active power — 660 mW • Low standby power — 110 mW

Contextual Info: KM684000/L/L-L CMOS SRAM 524, 288 WORD X 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550juW(Max.) L-Version 110/*W(Max.) L-L-Verslon Operating

KM684000

Abstract: km684000-7 KM68512
Contextual Info: CMOS SRAM KM684000/L/L-L 524, 288 WORD X 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550,uW(Max.) L-Version 110/<W(Max.) L-L-Version Operating

Contextual Info: Am99C641 65,536 x 1 Static Read/W rite Random-Access Memory PRELIMINARY High-performance CMOS circuit High Speed - access times as Single 5-V ±10% power-supply Low power - 715 mW active 110 mW TTL - Standby design fast as operation and •process 2 V data retention for battery back up applications

CY6116-35

Abstract: CY6116-55
Contextual Info: CY6116 CYPRESS SEMICONDUCTOR Features A utom atic pow er-dow n w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 35 ns Low active power — 660 mW Low stan d b y power — 110 mW T T L -com p atib le in p u ts and ou tp u ts C ap ab le o f w ith sta n d in g g rea ter

MC1474

Abstract: SN75479
Contextual Info: D ual P eripheral NOR D riv e r 75479 -5 3 « H fc ft 7 - 9 t rsj MIN T Y P MAX 70 VoH Vriki Vk K » Ir =100 mA I k—300mA tpd 100Q + 30pF tr «r Icc Pu 70 0.8 L—>H H—»L L-*H H—‘L Vo = L total (ABS.) 100 1.15 100 200 50 50 45 1.6 200 300 100 100

schematic circuit adsl modem board

Abstract: ED0B GR-1089 VDE0433 TRISIL SMP
Contextual Info: SMP100MC-xxx TELECOM EQUIPMENT PROTECTION: TRISIL FEATURES • ■ ■ ■ ■ ■ ■ Bidirectional crowbar protection Voltage range from 65V to 270V Low VBO / VR ratio Micro capacitance from 20 to 30pF typ @ 50V Low leakage current : IR = 2µA max

TRISIL

Abstract: SMP100MC VDE0433 VDE0878 TRISIL SMP ML20
Contextual Info: SMP100MC TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES • Bidirectional crowbar protection ■ Voltage: range from 120V to 270V ■ Low VBO / VR ratio ■ Micro capacitance from 20pF to 30pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min

TRISIL SMP

Abstract: MOROCCO B 108 B
Contextual Info: SMP100MC TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES • Bidirectional crowbar protection ■ Voltage: range from 120V to 400V ■ Low VBO / VR ratio ■ Micro capacitance from 15pF to 30pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min

TRISIL SMP

Abstract: ML-14 SMP100MC VDE0433 VDE0878 SMP 1.25A smp marking stmicroelectronics ml32 ML-40 ML27
Contextual Info: SMP100MC TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES • Bidirectional crowbar protection ■ Voltage: range from 140V to 400V ■ Low VBO / VR ratio ■ Micro capacitance from 15pF to 30pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min

schematic design for surge protector and electric

Abstract: smp marking stmicroelectronics TRISIL SMP ml32 AN2064 SMP100MC-160 TM DO-214AA SMP100MC VDE0433 VDE0878
Contextual Info: SMP100MC TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES • Bidirectional crowbar protection ■ Voltage: range from 140V to 400V ■ Low VBO / VR ratio ■ Micro capacitance from 15pF to 30pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

0201 footprint

Abstract: diode 2010 footprint TVS 0201 Diode tvs-diode IEC61000-4-4 SP1005 marking D diode 0201
Contextual Info: SPA Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection HF RoHS Pb GREEN SP1005 Lead-Free/Green Series Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

SP1005

Abstract: TVS 0201 Diode sp1005-01
Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

tvs diodes littelfuse

Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

IEC61000-4-4

Abstract: SP1005 SP-100-5
Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

DIODE V38 marking

Contextual Info: SPA Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection HF RoHS Pb GREEN SP1005 Lead-Free/Green Series Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide

0201 footprint

Abstract: tvs diodes littelfuse
Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide