KM684000 Search Results

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

KM684000BLP-7

Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
Contextual Info: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types

Contextual Info: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min

Contextual Info: PRELIMINARY KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5 fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)

Contextual Info: Prelimiariry CMOS SRAM KM684000ALI / ALI-L 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

Contextual Info: Prelimianry CMOS SRAM KM684000AL / AL-L 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550nW (Max.) L Version : 110|iW(Max.) L-L Version - Operating : 385mW /MHz(Max.)

KM6 II

Abstract: KM684000ALP-7 KM684000A KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND
Contextual Info: PRELIMINARY CMOS SRAM KM684000A Family 512Kx8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.4§- CMOS Organization : 512Kx8 Power Supply Voltage : Single 5V ¡¾ 10% Low Data Retention Voltage : 2V Min

Contextual Info: KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)

Contextual Info: CMOS SRAM KM684000C Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial draft O ctober 20,1998 Prelim inary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: KM684000UKM684000L-L CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10(iW (Typ.) L Version 5/iW ITyp.) L-L Version Operating: 110mW /MHz (Max.)

Contextual Info: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) : 11mW(Typ-) 1.1/iW(Typ.) L-Version 275« WfTyp.) LL-Version Operating

pin diagram of ttl 74112

Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42
Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version

Contextual Info: KM684000LI / Ll-L CMOS SRAM 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version

Contextual Info: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7th 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write; 35m A -> 45mA

Contextual Info: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) :11mWfTyp.) 1.1,«W(Typ.) L-Version 275,uW(Typ.) LL-Version Operating

Contextual Info: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: Preliminary CMOS SRAM KM684000C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision Hestorv Revision No. 0.0 History Draft Date Remark Initial d ra ft O c to b e r 2 0 ,1 9 9 8 P re lim in a ry The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

KM684000ALG-7

Abstract: KM684000ALP-7L KM684000A KM684000AL KM684000ALI KM684000AL-L
Contextual Info: j j £ w K M 684000A C M O S SR A M C l C1* ELECTRONICS 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology 0 4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S • • • • advanced CMOS process technology. The family

Contextual Info: KM684000BLR-7L IL08 4 M 524,288 x 8 -BIT SRAM —TOP VIEW— A15 IN 31 2 A16 IN A17 IN 30 3 A14 IN WE IN 29 4 A12 IN A13 IN 28 5 A7 IN A8 IN 27 6 A6 IN A9 IN 26 7 A5 IN A11 IN 25 8 A4 IN OE IN 24 9 A3 IN A10 IN 23 10 A2 IN CS IN 22 11 A1 IN I/O8 IN 21 12 A0 IN

km684000blp-7l

Abstract: km684000blp
Contextual Info: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types

KM684000ALI

Contextual Info: Prelîmianry KM684000ALI / ALI-L CMOS SRAM 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 4 0 °C - 8 5°C • Fast Access Tim e : 70,100ns M ax. • Low power dissipation

lem HA

Abstract: KM684000AL
Contextual Info: Prelimianry KM684000AL / AL-L CMOS SRAM 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550>iW(Max.) L Version : 110|iW(Max.) L-L Version - Operating : 385mW/MHz(Max.)

KM684000BLP-71

Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
Contextual Info: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package