10OOO Search Results

REA Series

Abstract: LTS-10304 LTS-10804
Contextual Info: I i-rc rA l J I LTS-10OOOWC SERIES L I I C L "J k I 1i0" LOW CURRENT RED SINGLE DIGIT NUMERIC LED DISPLAYS FEATURES • 1 O INCH 25 4 m m DIGIT HEIGHT • C O N TIN U O U S U N IFO R M S EG M ENTS. • LO W POW ER C O N S U M PTIO N . • LO W POWER REQUIREM ENT

k325

Abstract: K-325 K3-16 SMD resistors 1806 CN05 k-316 k316 K432 lemc3225 LEMC3225 CROSS
Contextual Info: SMD SMD COMPONENTS •a x ’g w i j 3B cB Soldering Avatable Packaging Quantity Cpcs Taping Dimensions Cmm] Products Paper « K in a s n Insertion pitch Ba n g e LEM2520 1008) 0 .0 1 — 100 A iH LEMC2520(1008) W OUND IN D U C TO R S 1 .0 — -33 u H LEMF2520(1008)

ALI m310 sd

Contextual Info: PRFLiMJNARY A M DC! A m 7 9 Q 0 6 /0 6 1 /0 6 2 /0 6 3 Quad Subscriber Line Audio-Processing Circuit QSLAC" Devices TABLE OF CONTENTS Distinctive C haracteristics.

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

HPJ-A21

Abstract: Yamatake Yamatake Corporation 3000Lx 1023 transistor EN61000-4-2 EN61000-4-4 ENV50204 ENV50141 kodak gray card
Contextual Info: Yamatake Corporation o SPECIFICATIONS er co 2. SPECIFICATIONS CATALOG LISTING SCANNING TYPE SUPPLY VOLTAGE CURRENT CONSAMPTION 10.8 TO 26.4VDC RIPPLE lOxmax. 20mA max SCANNING DISTANCE 3 0 ± 5mm TARGET HYSTERESIS OUTPUT MODE WHITE PAPER 10 X10cm (KODAK GRAY CARD 90%)

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory

59013 h 331

Abstract: 59014 c 331 comcode 105 736 490 fcs 9013 GR-253-CORE JT-G704 JT-G706 TMXL28155 TR-62411 59014 c
Contextual Info: Preliminary Data Sheet, Rev 2 June, 2002 TMXL28155 SupermapperLite 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, and T1/E1/J1 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

8a21

Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Contextual Info: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION

service-mitteilungen

Abstract: D09T200 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen RUNDFUNK TECHNIK Scans-048 color antenne Leipzig service mitteilung frankfurt
Contextual Info: SERVICE-MITTEILUNGEN WMBMI R A D IO -television |9 V E B IN D U S T R IE V E R T R IE B R U N D FU N K U N D F E R N S E H E N SSFSBBBl 1 9 7 6 1 - 8 E L E K T R O N 216 D Es ist beabsichtigt, in Kürze auch das Schwarz/Weiß-?emsehgerät ELEK­ TRON 216 D aus der UdSSR zu impor­

Contextual Info: FLASH MEMORY CMOS X M B 800 E k ts s FEATURES Voltage range 2.2 V to 2.7 V for read, program and erase Minimizes system level power requirements Low power consumption 15 mA maximum active read current for Word Mode 10 mA maximum active read current for Byte Mode

29F800TA

Abstract: 29f800ba MBM29F800 29F800T
Contextual Info: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)

SLA1024

Abstract: SLA1081 SLA1039 SLA1029
Contextual Info: S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS • DESCRIPTION The SLA10000 Series is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 10 arrays ranging from 8,000 to 101,800 usable gates

Contextual Info: 0.7 max — All dimensions are in millimeters / Tolerance is +/- 0.25 unless otherwise noted Emitting Colour: red Chip: InGaAlP Epoxy: water clear RoHS compliant Electrical I Optical Characteristics at Ta=25°C Symbol Parameter 201/2 Viewing Angle Iv Luminous Intensity

82378

Contextual Info: 82378 SYSTEM I/O SIO • Provides the Bridge Between the PCI Bus and ISA Bus ■ 100% PCI and ISA Compatible — PCI and ISA Master/Slave Interface — Directly Drives 10 PCI Loads and 6 ISA Slots — Supports PCI at 25 MHz and 33 MHz — Supports ISA from 6 MHz to 8.33

8030D

Abstract: 5001c ic pin details M13RF LC1 D18 E23378 0x2000D 747 ic XC1so 816f capacitor 1e81
Contextual Info: Preliminary Data Sheet December 2001 TMXF28155 Supermapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3/E3, DS2, T1/E1/J1, and DS0/E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

Contextual Info: MITEL MH88636-4 Central Office Interface Circuit Preliminary Information ISSUE 2 zFeatures • Loop Start Trunk Interface • 90CX2 Input Impedance • 2-4 Wire Conversion • On-Hook Reception • Line State Detection Outputs: January 1997 Ordering Inform ation

104 k5k capacitor

Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
Contextual Info: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4

IC BD 540 LYS

Abstract: 32T0 BD 540 LYS m-56a Hitachi DSA0088 HB56A169 D-83622 C42S
Contextual Info: HB56A169BR-6B/7B/8B Preliminary 16,777,216-Word x 9-Bit High Density Dynamic RAM Module Rev. 0 Jul. 17, 1995 The HB56A169 is a 16M x 9 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM HM5116100BS sealed in SOJ package. An outline of the HB56A169 is 30-pin single inline package. Therefore, the HB56A169 makes

KM28U800

Abstract: ba1g KM28U800-T
Contextual Info: Preliminary FLASH MEMORY KM28U800-T/B 8M Bit 1M X8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V tor Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90 ns

1A14A

Abstract: T28F200 28F400-T
Contextual Info: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase

M37220M3-XXXSP

Contextual Info: MITSUBISHI MICROCOMPUTERS M37220M3-XXXSP SINGLE-CHIP 8-BIT CM O S MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER DESCRIPTION The M37220M3-XXXSP Is a single-chip microcomputer designed with PIN CONFIGURATION TOP VIEW CMOS silicon gate technology. It is housed in a 42-pin shrink plastic

Contextual Info: Preliminary Data Sheet, Rev 1 March 2002 TMXL28155 SupermapperLite 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, and T1/E1/J1 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

date code panasonic sealed lead acid

Abstract: panasonic resistors marking code date code of panasonic resistors Panasonic marking code
Contextual Info: Fixed Metal Film Fuse Resistors, ERQN Panasonic Fuse Resistors Type: ERQN Fixed metal film resistors Low power fusible type • • • • • Features Fuse within 60 second at 1.25 W No increase of electric current, arcing at fusion Covered with shrinked tube and small size

U103M29Y5

Abstract: u503m2 UK50-104
Contextual Info: SERIES U r ~ - i Ultra-Kap, 3VDC through 100VDC, Low Voltage El A Class IV Ceramic Capacitors DESCRIPTION: Ph ilips Components Ultra-Kap capacitors provide many advantages when compared to ordinary ceramic capacitors. Their unique semi-conductor