10N60 E Search Results

10N60G

Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

10N60

Abstract: power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

tf 10n60

Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

10N60G TO-220F

Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

MOSFET 10n60

Abstract: 10n60b 10N60 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

UTC10N60

Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

10N60G TO-220F

Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

10N60

Abstract: 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

10N60L

Abstract: 10N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

mosfet 10a 600v

Abstract: MOSFET 10n60 10N60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

10N60A

Abstract: IGBT 10N60 10N6Q
Contextual Info: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s

10N60A

Abstract: IGBT 10N60 10N60 10N60 e N60A
Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

Contextual Info: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD

MOSFET 10n60

Abstract: TF 10N60 e MTN10N60FP 10N60 equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet mosfet 10a 600v CYStech Electronics
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60FP Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

MOSFET 10n60

Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
Contextual Info: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)

10N60A

Abstract: IGBT 10N60 10N60 ixga 10N60 IXGH10N60 IXGH10N60A G 10N60 A g 10N60
Contextual Info: Preliminary data VCES Low VCE sat IGBT High speed IGBT IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

MOSFET 10n60

Abstract: 10N60 MTN10N60E3 CYStech Electronics TF 10N60 e MOSFET 10n60 Data sheet ISD10* information storage device mtn10n60e
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60E3 Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

10N60A

Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60
Contextual Info: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

equivalent of 10N60 mosfet

Abstract: MOSFET 10n60 10n60 3VD446600YL MOSFET 10n60 Data sheet
Contextual Info: 3VD446600YL 3VD446600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD446600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in Ø 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced

IXTH10N60

Abstract: IXTM10N60
Contextual Info: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices