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Infineon Technologies AG


Infineon Technologies AG IPP10N03LBG Power Field-Effect Transistor, 50A I(D), 30V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPP10N03LBG		12,126			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB10N03LB Power Field-Effect Transistor, 50A I(D), 30V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB10N03LB		8,679			1 - 10 - 100 - 1000 - 10000 -	Get Quote

10N03LB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10n03l Abstract: 10N03LB Contextual Info: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp10n03lb pg-to220-3-1 q67045-a5033 10n03lb +110n03l	PDF
10N03 Abstract: 10n03l IPP10N03LB JESD22 10N03LB Contextual Info: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp10n03lb pg-to220-3-1 10n03lb 10n03 +210n03l jesd22	PDF
10N03 Abstract: IPP10N03LB JESD22 10n03l Contextual Info: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp10n03lb pg-to220-3-1 10n03lb 10n03 +2jesd22 10n03l	PDF
10n03 Contextual Info: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp10n03lb pg-to220-3-1 10n03lb 10n03	PDF
Contextual Info: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 9.9 m: ID 50 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp10n03lb pg-to220-3 10n03lb	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
10n03 Abstract: IPB10N03LB JESD22 10n03l Contextual Info: 10N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb10n03lb pg-to263-3 10n03lb 10n03 +2jesd22 10n03l	PDF
10N03L Abstract: 10N03LB 10N03 Contextual Info: 10N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb10n03lb p-to263-3 q67045-a5032 10n03lb +210n03l 10n03	PDF