10MAR97 Search Results

application note jfet J111 transistor

Abstract: datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
Contextual Info: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltage-controlled resistor VCR may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in

Si6410DQ

Contextual Info: Si6410DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 D S S G 1 2 3 4 D Si6410DQ 8 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET

70611

Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Contextual Info: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. P LTR DESCRIPTION ECO-14-008653 D DWN APVD JM 10JUN2014 LS 1 MATERIAL: PANEL - STEEL, POWDER COAT, BLACK. JUMPER TROUGH: -1 POLYCARBONATE MOLDING COMPOUND, IVORY.

mar 827

Abstract: 8 pin plc cable
Contextual Info: THIS DRAWING 13 A CONTROLLED DOCUMENT FOR AMP INCORPORATED. IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST FT 8 P LTR DESCRIPTION DATE DUN APVD D E REDRAW ON CAD PER EC 0020-1109-95

btzx15

Abstract: TZX12B tzx6v8b
Contextual Info: Tem ic Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Absolute Maximum Ratings

P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in

FET J202

Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
Contextual Info: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404
Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET

silicon npn planar rf transistor sot 143

Abstract: MAR 641 TRANSISTOR mar 552 MAR 618 transistor "Small Signal Amplifiers" BFP67 BFP67R f 1405 zs
Contextual Info: BFP67/BFP67R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.

TZX33

Abstract: Telefunken tk 19 TZX10 TZX11 TZX12 TZX13 TZX14 TZX15 TZX16 TZX18
Contextual Info: TZX. Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C

BF579

Abstract: marking GG BF579R
Contextual Info: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency • Low disortation 1 _EL R H ^ 2 FT 94 9280 — B 3

FET pair n-channel p-channel

Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.

Siliconix AN102

Abstract: J201 N-channel JFET "common drain" amplifier impedance matching pair datasheet 2n5484 jfet matched pair JFET Dual N-Channel JFET SST5484 Siliconix JFETs Dual Siliconix JFET Dual 2n5912 sot
Contextual Info: AN102 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain consistent circuit performance, in spite of device variations, is to use a combination of constant

ic-vn

Contextual Info: Temic BFP67/BFP67R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. jk Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

siliconix sd210

Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
Contextual Info: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.

P-Channel Depletion Mosfets

Abstract: mosfet low idss mosfet depletion P-Channel Depletion-Mode depletion mode fet Depletion MOSFET N-Channel Depletion-Mode MOSFET depletion mode mosfet n-channel mosfet triggering N CHANNEL DEPLETION MOSFET
Contextual Info: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate potential

Contextual Info: Tem ic SÌ6410DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary Vd s (V) I d (A) ±7.8 ± 6.3 rDS(on) (Q) 0.014 @ VGS= 10 V 0.021 @ Vqs = 4.5 V 30 p o '« *0' D Q TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied com m on. It ,O 1 Top View

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - - LOC ALL RIGHTS RESERVED. AJ DIST 00 REVISIONS P LTR J DESCRIPTION DATE REVISED PER ECO 06-016786 DWN APVD DW KW 1 /2 2 /2 0 0 7 D D C 415024

FET J202

Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
Contextual Info: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and

SD5000

Abstract: siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210 SD210DE SD5400 2n7000 equivalent
Contextual Info: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application

PMC91

Abstract: PM431
Contextual Info: CD-ROM Documents Download a current version of this list from our web site New documents are posted on http://www.pmc-sierra.com/docs/cdrom/doclist.pdf http://www.pmc-sierra.com/register/w-new_docs.asp Asynchronous/PDH Document Type Issue QDSX Short Form Data Sheet

Siliconix AN102

Abstract: FET J202 Siliconix JFET application note 2N5912 transconductance 2N5485 2N4339 Siliconix AN102 datasheet 2n5484 jfet 2N4338 2N5484
Contextual Info: AN102 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain consistent circuit performance, in spite of device variations, is to use a combination of constant