10MAD Search Results

Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

MMBT3904

Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

NL8060BC31-42

Abstract: lcd 15.4 inverter
Contextual Info: 10mAD3596 Specifications and Applications Information 04/20/07 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3596 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate

NL10276BC30-24D

Abstract: lcd 15.4 inverter
Contextual Info: 10mAD3383F Specifications and Applications Information 02/28/08 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3383F 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate

12 volt dc to 230 volt ac inverter

Abstract: NL10276BC30-24D lcd 15.4 inverter
Contextual Info: 10mAD3382 Specifications and Applications Information 07/21/08 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3382 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate

Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

"marking s1a" sot-23

Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

NL10276BC30-24D

Abstract: lcd 15.4 inverter
Contextual Info: 10mAD3383 Specifications and Applications Information 02/28/08 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3383 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate

MD986

Abstract: MD986F MD966 508 die 610-A03
Contextual Info: MD9 8 6 silicon MD9 8 6 F NPN/PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as switches, dual general-purpose amplifiers, front end detectors and in temperature compensation applications. • Low Collector-Emitter Saturation Voltage -V cE(sat) ~ 0.3 Vdc (Max) @ I q = 10mAdc

K1010

Abstract: FB0803 e 420 DCK-1010
Contextual Info: FB0803 扩散硅型压力变送器 一技术指标 使用对象 液体、气体或蒸汽 表压：0～5KPa～3.5MPa , 密封表压：0～7MPa～120MPa 测量范围 绝压： 0～20KPa～120Mpa ， 负压：-100KPa～700KPa 输出 4～20mADC，可提供 0-10mADC,0-5VDC,1-5VDC 等形式

Contextual Info: AM7203 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionPair;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.

Contextual Info: AM7208 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionQuad;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.

2N2907 application notes

Abstract: 2N2907 a TRANSISTOR
Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

2N2907A

Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

pressure vessel

Abstract: NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE LD500 M12X1 M20X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting
Contextual Info: LD500 pressure transmitter Description LD500 pressure transmitter adopts the high accurate and stable isolation sensors from USA, which combine solid-state integration technique with isolation diaphragm technique. The product preserves high sensitivity, linearity and stability even

Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54X List List. 1 Package outline. 2 Features. 2

Contextual Info: SPD48 thru SPD51 Solid State Devices, Inc. Series 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 200 mAMP 50-125 Volts 5 nsec Part Number / Ordering Information 1/

bav99

Abstract: smd diode marking jc sot23
Contextual Info: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

MSD7000

Abstract: MSD700 LMBT6520LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor We declare that the material of product compliance with RoHS requirements. LMBT6520LT1G Ordering Information Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS

SC-89

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1G ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1G MA

MMBTH10

Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Contextual Info: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter

MMBL914H

Contextual Info: MMBL914H SOD-323 1 WEITRON http://www.weitron.com.tw MMBL914H Maximum Ratings Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM Surge 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C