10LA Search Results
10LA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PTH12010LAS | Texas Instruments | 0.8 to 1.8 V 12-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Surface Mount Module -40 to 85 |
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| PTH12010LAH | Texas Instruments | 0.8 to 1.8 V 12-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Through-Hole Module -40 to 85 |
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| PTV12010LAD | Texas Instruments | 0.8 to 1.8-V 8-A, 12-V Input Non-Isolated Wide-Adjust SIP Module 8-SIP MODULE -40 to 85 |
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| PTH12010LAZ | Texas Instruments | 0.8 to 1.8 V 12-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Surface Mount Module -40 to 85 |
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| PTV12010LAH | Texas Instruments | 0.8 to 1.8-V 8-A, 12-V Input Non-Isolated Wide-Adjust SIP Module 8-SIP MODULE -40 to 85 |
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10LA Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 10LA | Vishay Intertechnology | Single turn rotational motion transducer | Original | 198.25KB | 3 | ||
| 10LA | Semicon Components | Silicon Avalanche Rectifiers 1 to 350 Amp Selection Guide | Scan | 88.93KB | 1 |
10LA Price and Stock
ODU-USA Inc S10LAC-P02MJG0-5600- Bulk (Alt: S10LAC-P02MJG0-5600) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S10LAC-P02MJG0-5600 | Bulk | 14 Weeks | 1 |
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ODU-USA Inc S10LAC-P04MFG0-5200- Bulk (Alt: S10LAC-P04MFG0-5200) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S10LAC-P04MFG0-5200 | Bulk | 14 Weeks | 1 |
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ODU-USA Inc K10LAC-P02LJG0-3200- Bulk (Alt: K10LAC-P02LJG0-3200) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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K10LAC-P02LJG0-3200 | Bulk | 16 Weeks | 1 |
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ODU-USA Inc S10LAC-P05MFG0-3200- Bulk (Alt: S10LAC-P05MFG0-3200) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S10LAC-P05MFG0-3200 | Bulk | 14 Weeks | 1 |
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ODU-USA Inc S10LAC-P09MCC0-2200- Bulk (Alt: S10LAC-P09MCC0-2200) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S10LAC-P09MCC0-2200 | Bulk | 14 Weeks | 1 |
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10LA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LCD TV T-con board 41 pin name
Abstract: lvds core power down corrugated SHEET FLC51UXC8V-10L NA19025
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flc51uxc8v-10lalcd-00279lcd tv t-con board 41 pin namelvds core power down+3 | |
TIM1414-10LA-252Contextual Info: MICROWAVE POWER GaAs FET TIM1414-10LA-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS |
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tim1414-10la-25275ghz | |
TIM1414-10LAContextual Info: TOSHIBA TIM1414-10LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
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tim1414-10la2-11c1bmw50360196 | |
veritech
Abstract: VM10LA SDL Fiber Amplifier 10LA VM10LA-XXX SDL MA Fiber Amplifier
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dsvm10la-0800veritechvm10lasdl fiber amplifier+3 | |
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Contextual Info: RS ITEM NO 206-536 SIGNO ITEM NO 10LAREM LED/Multiled - Optimum voltage V - Mounting Size 10x 42mm Rectifier - Mounting Finish - AC current - Protection - DC current - Mount Holder - Voltage Tolerance(%) - Chip Qty - Optimum temperature (°C) -25°C.+60°C |
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10larem | |
x7r 10uFContextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10LA08 RoHS compliance product ○EMK316AB7106ML 1000 Capacitance[uF] . 16V 3216 X7R 10uF +/-20% t=1.8mmMAX 16V 1206 X7R 10uF +/-20% t=0.071inchMAX EMK316AB7106ML Capacitance Freq. 100 10 1 0.001 |
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10la08emk316ab7106ml071inchmaxx7r 10uf | |
TIM1414-10LA-252Contextual Info: MICROWAVE POWER GaAs FET TIM1414-10LA-252 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE |
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tim1414-10la-25275ghz2-11c1b | |
x7r 10uF
Abstract: EMK316AB7106KL 3216 X7R EMK316AB 3216X7R
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10la08emk316ab7106kl071inchmaxemk316+4 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
OCR Scan |
tim1414-10lainte80mw50350196 | |
TIM1414-10LA-252Contextual Info: TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point P1dB Power Gain at 1dB Compression Point G1dB Ta= Ta= 25° 25°C CONDITION MIN. TYP. MAX. UNIT 39.0 39.5 - dBm 4.5 5.5 - dB |
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tim1414-10la-25229dbm145ma | |
DMF63446
Abstract: Fujitsu SM02B-BHSS-1-TB J3 Package
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dmf63446flc51xc8v-10lafujitsusm02b-bhss-1-tb+1 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICRO W AVE SEM ICO NDU CTO R TIM1414-10LA TECHNICAL DATA FEATURES : • L O W IN T E R M O D U L A T IO N D IS T O R T IO N IJVI3 = ■ ~ 45 d B c a t P o = 2 9 .0 d B m , G i dB = 6 .0 d B a t 1 4.0 G H z to 1 4 .5 G H z |
OCR Scan |
tim1414-10la | |
TIM1414-10LAContextual Info: MICROWAVE POWER GaAs FET TIM1414-10LA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5GHz HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED FET |
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tim1414-10la | |
ES50N18LA2
Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
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ptx19cl-bs12n9-4b-1cb14-a2cb12c-a+12 | |
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2SB1302Contextual Info: Ordering number: EN 2 5 5 5 A 2 S B 1 3 02 N0.2555A SAXYO PNP Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes |
OCR Scan |
2sb1302250mm2 | |
mdq53
Abstract: ddr3 pinout MSC8157 10-lane serdes 10-lane
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msc8157sc385032-bitmdq53+3 | |
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Contextual Info: AT91SAM ARM-based Embedded MPU SAM9X35 SUMMARY DATASHEET Description The SAM9X35 is a highly-integrated 400 MHz ARM926EJ-S embedded MPU, featuring an extensive peripheral set and high bandwidth architecture for industrial applications that require refined user interfaces and high-speed communication. |
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at91samsam9x35arm926ej-s10-bit+1 | |
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Contextual Info: ARM-based Embedded MPU SAM9G35 DATASHEET Description The SAM9G35 is a member of the Atmel series of 400 MHz ARM926EJ-S embedded MPUs that support high bandwidth communication and advanced user interfaces and are optimized for industrial applications such as building automation, |
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sam9g35arm926ej-s10-bit | |
PICMG 2.0 R3.0
Abstract: PICMG 2.0 atx connector 10-layer atx power supply
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64-bit32-bitpicmg 2.0 r3.0picmg 2.0+3 | |
smd transistor w16
Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
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cy6116a-35dmbcy6116a-35lmb840erpre-1985+10 | |
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Contextual Info: Features • Core • • • • • • • – ARM926EJ-S ARM Thumb® Processor running at up to 400 MHz @ 1.0V +/- 10% – 16 Kbytes Data Cache, 16 Kbytes Instruction Cache, Memory Management Unit Memories – One 64-Kbyte internal ROM embedding bootstrap routine: Boot on NAND Flash, |
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arm926ej-s64-kbyte32-kbyte32-bit+3 | |
BC324
Abstract: PES12N3A 12N3A 89HPES12N3A JESD-51 mA 723 89HPES12N3AZGBCGI
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89hpes12n3a12-lane8b/10b89hpes12n3a1zcbci+9 | |
PES24N3A
Abstract: 89HPES24N3A JESD-51 89HPES24N3AZCBXG
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89hpes24n3a24-lane89hpes24n3azcbx420-pin+6 | |
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Contextual Info: 12-Bit, 2.5 GSPS/2.0 GSPS, 1.3 V/2.5 V Analog-to-Digital Converter AD9625 Data Sheet FUNCTIONAL BLOCK DIAGRAM AVDD DRVDD DRGND AGND REFERENCE DIGITAL INTERFACE AND CONTROL VCM VIN+ VIN– ADC CORE DDC fS/8 OR fS/16 SERDOUT[0]± SERDOUT[1]± SERDOUT[2]± SERDOUT[3]± |
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12-bitad9625fs/16196-ball | |