10KEV Search Results

DIFFERENTIAL/HS1-5104RH

Contextual Info: 2 H A R R I S H S -5 104 RH Radiation Hardened Low Noise Quad Operational Amplifier J u ly 1 9 9 0 Features P in o u t • Radiation Environment ► Neutron Fluence <t>). 5 x 101 2 n/c m 2 ( E i 10KeV) ►Gamma Rate ( y ) . 1 x 109 RAD (Si)/s

HS-3530RH

Abstract: HS2-3530RH-8 HS2-3530RH-Q
Contextual Info: HS-3530RH Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout • Radiation Environment - Neutron Fluence Φ 5 x 1012 n/cm2 (E ≥ 10KeV) - Gamma Rate (γ) 1 x 109 RAD (Si)/s - Gamma Dose (γ) 1 x 106 RAD (Si) 8 LEAD METAL CAN PACKAGE (CAN)

HS-3530RH

Contextual Info: fü HARRIS HS-3530RH S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier April 1995 Pinout Features HS2-3530RH 8 PIN METAL CAN TOP VIEW • Radiation Environment - Neutron Fluence 0> 5 x 1012 n/cm2 (E > 10KeV) - Gamma Rate Ci) 1 x 109 RAD (Si)/s

OD-800F

Abstract: OD-800L OD-800W od800w
Contextual Info: HI-REL RAD HARD IR EMITTERS OD-800W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • Designed for high radiation tolerance .209 .212 • Excellent power degradation characteristics • High power output • Fast response .183 .152 .187 .156 .100

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

OPA03

Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in

nir emitter leds with 700 to 900 nm

Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
Contextual Info: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety

74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

OD-800L

Contextual Info: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800L ANODE CASE .015 • Designed for high radiation tolerance .209 .220 • Excellent power degradation characteristics • High power output .183 .152 .186 .156 • Fast response .100 • Hermetically sealed metal package

Contextual Info: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

chip diagram of ram chip 6116

Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz

B1762

Abstract: la 1213 ic 921 RJ32 SFT6200
Contextual Info: Preliminary Data Sheet SFT6200 10 AMP RADIATION TOLLERANT NPN TRANSISTOR 213 9 2 1 -9 6 6 0 150 VOLTS L CASE STYLE W JEDEC TO—5 1 4 8 3 0 V a lle y V ie w A v e n u e L a M i rad a. C a lifo rn ia 9 0 6 3 8 T W X 9 1 0 -5 8 3 -4 8 0 7 F A X 2 1 3 -9 2 1 -23 9 6

OD-800F

Contextual Info: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800F ANODE CASE .015 • Designed for high radiation tolerance .209 .220 • Excellent power degradation characteristics • High power output .183 .186 .152 .154 • Fast response .100 • Hermetically sealed metal package

opto 1010

Abstract: OD-800PP OD-880PP
Contextual Info: HI-REL GaAlAs IR EMITTERS OD-880PP FEATURES GLASS DOME .010 R. .005 .010 .082 .088 • High reliability LPE GaAlAs IRLEDs • High power output ANODE .084 .092 • 880nm peak emission • Hermetically sealed miniature pill package .058 .062 • MIL-S-19500 screening available

2N5531

Abstract: j3305 2N552 Solitron Devices solitron transistors 2N5527 SOLITRON silicon power transistors TR-33 tr33"05
Contextual Info: — SOLITRON DEVICES INC bb DE | û3bflt,D2 ODDl^D? 2 ~ f 1_ _ 3 ?, ü ^ RADIA TION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 2N5531 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 5 x 1014 nvt

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

harris 6616

Contextual Info: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2

OD-800PP

Contextual Info: HI-REL RAD HARD IR EMITTERS OD-800PP FEATURES GLASS DOME .010 R. .005 .010 • Designed for high radiation tolerance .082 .088 ANODE .084 .092 .016 .024 • High power output • Fast response .058 .062 • Hermetically sealed miniature pill package • MIL-S-19500 screening available

Contextual Info: X-RAY I.I. CAMERA UNIT C7716, C7716-10 NEW 3”/1.8” Dual Mode X-ray Image Intensifier X-Ray I. I. Efficiently Coupled to CCD Camera Captures sharp, clear X-ray images even from light element materials ! The C7716 series X-ray image intensifier (I. I.) camera

Contextual Info: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800L ANODE CASE • Designed for high radiation tolerance .209 .212 .015 • Excellent power degradation characteristics • High power output • Fast response .183 .152 .186 .156 .100 • Hermetically sealed metal package

OD-800F

Contextual Info: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800F ANODE CASE • Designed for high radiation tolerance .209 .212 .015 • Excellent power degradation characteristics • High power output .183 .186 • Fast response .152 .154 .100 • Hermetically sealed metal package

opto 1010

Abstract: OD-800PP
Contextual Info: HI-REL RAD HARD IR EMITTERS OD-800PP FEATURES GLASS DOME .010 R. .005 .010 .082 .088 • Designed for high radiation tolerance • Super high reliability ANODE .084 .092 • High power output • Fast response .058 .062 • Hermetically sealed miniature pill package

2N5530

Abstract: LC117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors 2N5529 Solitron Devices Solitron Transistor 2N5533
Contextual Info: 83£flßI^- S O L I T R O N DEVICES INC _ _ _ _ 6 6 C 01912 D T"1 3 3 - /f _ I^ SätD aD D D M ia t I ßflQ ifljH jfl KtSlSlAN T NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES FEATURES