10H45 Search Results

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

COSMIC

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 920 IFRMS = 1440 IFSM = 25 VF0 = 1.6 rF = 1.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115- 01 July 98 Features • Patented free-floating silicon technology

A125

Abstract: B125 C125 D125 10H4503
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

A140

Abstract: B140 C140 VF140 VF25
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ Ω V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 Nov. 03 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating

A140

Abstract: B140 C140 VF140 VF25 5SDF kn 18
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating

snubber IGCT

Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 950 1500 24 1.94 0.86 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 • • • • • Patented free-floating technology Industry standard housing

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Jan. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

snubber IGCT

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 950 IFRMS = 1500 IFSM = 24 VF0 = 1.94 rF = 0.86 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 Features • Patented free-floating technology

5.5 kw abb

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 810 24x103 2.42 1.1 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

10H45

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

10H4503

Abstract: abb b25
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Nov. 04 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Contextual Info: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum

TO220FPAB

Abstract: diode V101 power supply lcd monitor tb3t V101
Contextual Info: 10H45C 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. „ High junction temperature capability „ Good trade off between leakage current and forward voltage drop „

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

IGCT thyristor ABB

Abstract: high power igct abb
Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 March 05 • High snubberless turn-off rating • Optimized for medium frequency (<1kHz) and

IGCT thyristor ABB

Abstract: high power igct abb agilent 5SZK 9107 Specification
Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 May 06 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

Contextual Info: 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. ̈ High junction temperature capability ̈ Good trade off between leakage current and forward voltage drop ̈ Low leakage current

Contextual Info: 10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

S16070

Contextual Info: MITSUBISHI ICs TV { M51307BSP i NTSC SYSTEM SINGLE-CHIP COLOR TV SIGNAL PROCESSOR DESCRIPTION The M51307BSP is a semiconductor integrated circuit with signal processing functions for video IF, sound IF, video, color, deflection signals and a single chip capable of

5SDF28L4520

Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing  Cosmic radiation withstand rating  Optimized low on-state

diode sy 170

Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.

SS10PH45

Contextual Info: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum

SS10PH45

Contextual Info: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C

IGCT 7000

Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5500 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-04 May 08 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity