10FXS Search Results

AD7576

Abstract: AD7576BQ AD7576KN AD7576SQ AD7576TQ 74hc4000 6809 8bit Instruction set
Contextual Info: ANALOG DEVICES LC2M0S 10fxs jjiP Compatible 8-Bit ADC AD7576 FEATURES Single + 5V Operation with External Positive Reference Fast Conversion Time: IOjls No Missed Codes Over Full Temperature Range Microprocessor Compatible Low Cost Low Power 15mW 100ns Data Access Time

Contextual Info: DS4393-2.6 ITC14415006D POWERLINE N-CHANNELIGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25 C VCES 600V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability (10fxs)

Contextual Info: B U R R - BROW N« ADS7804 12-Bit 10fxs Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • • • • The ADS7804 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a complete 12-bit capacitor-based SAR A/D with S/H,

Contextual Info: SP8603, SP8605, SP8610 SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters • 3|is, 5|as or 10jxs Sample/Conversion Time ■ Unipolar OV to +10V and OV to +5V Input ■ No Missing Codes Over Temperature ■ AC Performance Over Temperature 72dB Signal-to-Noise Ratio at Nyquist

TDA 5700

Abstract: tda 7770 IM6402 SK 5207 tda 8838 SKI 3203 TDA 3006 hs 3161 z9009 IM6100
Contextual Info: IM 6 1 0 1 P ro gram m able In te rfa c e E lem en t P IE D m ü ^D L FEATURES GENERAL DESCRIPTION • Com patible with IM 6100 Microprocessor The IM6101 is a Program mable Interface Element (PIE) device designed for interfacing various peripheral chips such as U A R T ’s, F IF O ’s, Keyboard Scanner’s to

Contextual Info: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

IC CD 4440 pin diagram

Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

SMBJ64A

Contextual Info: SMBG AND SMBJ5.0 THRU 170CA SURFACE MOUNT T ra n s Z orb TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5 . 0 to 170 Volts Peak Pulse Power - 600 Watts DO-214AA FEATURES MODIFIED J-BEND 0.086 2.20 J | Plastic package has Underwriters Laboratory Flammability

Contextual Info: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro­ grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.

diode byt 45

Abstract: DIODE DO-220
Contextual Info: / = T SGS-THOMSON ^ 7 # BYT 08PI-1000 f FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPA­ BILITY ■ VERY LOW REVERSES RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED : Capacitance 7pF Insulting voltage 500 Vrms

8542A

Contextual Info: General Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544 ANALOG DEVICES PIN CONFIGURATIONS FEATURES Single Supply Operation: +2.7 V to +5.5 V Low Supply Current: 45 jiA/Am plifier W ide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA

CQ220-8B

Abstract: CQ220-8D CQ220-8M CQ220-8N
Contextual Info: Datasheet ^ - iie n ir n M CQ220-8B CQ220-8D CQ220-8M CQ220-8N • Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 8.0 AMP TRIAC 200 THRU 800 VOLTS Manufacturers of World Class Discrete Semiconductors

Contextual Info: SGS-THOMSON K8D §Mim(Sfflfi!W[] i M29F040 4 Mb (512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1Ojas typical ■ ERASE TIME - Block: 1.0 sec typical

MAX512CPD

Contextual Info: 19-0252; Rev 0, 4/94 Low-Cost, 7Wpfe, 8-Bit Voltage-Output DACs w ith S erial In te rfa c e .Features ♦ Operate from a Single +5V MAX512 or +3V (MAX513) Supply, or from Bipolar Supplies ♦ Low Power Consumption 1mA Operating Current <1nA Shutdown Current

Contextual Info: OSM9510-12 MAINTENANCE TYPE J \ _ HIGH-VOLTAGE RECTIFIER STACK The OSM951Û-12 is a silic o n r e c tif ie r s ta c k fo r high v o ltag e ap p licatio n s up to 12kV in h alf-w av e c ir c u its , o r up to 6kV a s one of th e a r m s of a

Contextual Info: GEC P LE SS EY Si S E M I C O N D U C T O R S DS4326-3.1 GP2000FSS06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS v¥ c e s 600V v CE sal 2.1V 1 2000A C(CONT) 1 4000A C(PK) 290ns tr 430ns t. APPLICATIONS • High Power Switching. ■ Motor Control.

A4NV

Contextual Info: HYUNDAI H Y 5 1 1 6 4 1 0 S e r ie s 4M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai's CMOS silicon gate process technology as well as advanced

TOLD-9211

Abstract: told 9211 driver transistor ztx told 9211 toshiba told 9211
Contextual Info: X T L in C A B . - TECHNOLOGY y / LT111Q M icropow er DC-DC C onverter Adjustable and Fixed 5V, 12V F€ATUR€S DCSCRIPTIOfl • Operates at Supply Voltages From 1,0V to 30V ■ Works in Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components

Contextual Info: M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1Ojas typical ■ ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical

Contextual Info: SGS-THOMSON M29F102B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIM IN ARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical

lm358 thermocouple

Abstract: adjustable zero span circuit with lm358 AD208-SPECIFICATI0NS D246R 1P250 lm358 square wave lm358 thermocouple k AMPLI DUAL CV 60
Contextual Info: A N A LO G D E V IC E S High Precision, Low Offset, mV Input Isolation Amplifier AD208 FEATURES Wide Gain Range: 1 to 1000 V /V Low Nonlinearity: ±0.0125% Low Input Offset Voltage: ±0.27 mV, max G = 1000 V/V Low Offset Drift: ±1.5 (j.V/°C , max (G = 1000 V /V )

ST Microelectronics date code format

Abstract: 81AE
Contextual Info: M48T08 A 7 # . [M»[g[LI gmMD(gS_ M48T18 / T T S G S -T H O M S O N 64Kb (8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,