10A 400V ULTRA FAST DIODE D2PAK Search Results

Contextual Info: FDB12N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 10 A, 800 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

10a 400V ultra fast diode d2pak

Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

FDB12N50U

Contextual Info: TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

10a 400V ultra fast diode d2pak

Abstract: schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a CMSH3-40 sod-123 trr 75ns cbrhdsh1-40l CMR3U-06 SOT923
Contextual Info: Rectifiers • General Purpose Rectifiers • Fast Recovery Rectifiers • Ultra Fast Recovery Rectifiers • Super Fast Recovery Rectifiers • Schottky Rectifiers • Bridge Rectifiers General Purpose Rectifiers 1.0 to 3.0 Amperes 200 to 1000 Volts IO AMPS

Contextual Info: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and

FGB20N60SFD

Abstract: IGBT welder circuit inverter welder circuit Circuit of welder IGBT inverter
Contextual Info: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

igbt 400V 20A

Abstract: IGBT welder circuit 400v 20A ultra fast recovery diode FGB20N60SF 20A igbt 12v igbt 20a FGB20N60SFD 10a 400V ultra fast diode d2pak
Contextual Info: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

Contextual Info: FGB5N60UNDF 600 V, 5 A Short Circuit Rated IGBT General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,

ULTRA FAST diode 400v 5a

Contextual Info: FGB5N60UNDF 600 V, 5 A Short Circuit Rated IGBT General Description Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,

ULTRA FAST diode 400v 5a

Abstract: inverterdriven igbt 100V 5A IGBT Driver 10a 400V ultra fast diode d2pak
Contextual Info: FGB5N60UNDF tm 600V, 5A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description

Contextual Info: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where

Contextual Info: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where

sF10A400

Contextual Info: SF10A400HDS Ultra Fast Recovery Diode Applications PIN Connection • High speed swit ching and rect ificat ion • Sw it ching m ode power supply Features 4 • Ult ra- fast reverse recovery t im e: t rr = 30ns Max. • Low forward volt age & low reverse current

mosfet 10a 600v

Abstract: FCB20N60F FCB20N60FTM ED60a
Contextual Info: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

sf10a400hds

Abstract: SF10A400HD SF10A400H 10a 400V ultra fast diode d2pak ultra fast recovery diode sF10A400 D2Pak Package Land
Contextual Info: SF10A400HDS Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply Features 4 • Ultra-fast reverse recovery time: trr=30ns Max. • Low forward voltage & low reverse current • Low switching loss

10a 400V ultra fast diode d2pak

Contextual Info: SF10S400D2 Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply 4 Features • Ultra-fast reverse recovery time: trr=30ns Max. • Low forward voltage & low reverse current

Contextual Info: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications • High Current Capability • Solar Inverter, UPS, Welder, PFC • Low Saturation Voltage: VCE sat = 2.2 V @ IC = 20 A General Description • High Input Impedance • Fast Switching : EOFF = 8 uJ/A

Contextual Info: SuperFETTM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCB20N60

Abstract: counterfeit FCB20N60 mosfet 20a 300v mosfet 600V 20A Mosfet 600V, 20A
Contextual Info: SuperFET FCB20N60 TM 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and