10A 100V DARLINGTON POWER TRANSISTOR Search Results

2SB1079

Abstract: 2SD1559
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS

2SB1100

Abstract: darlington transistor for audio power application darlington power transistor 10a 10A 100V darlington power transistor 2SD1591 transistor 10a 100v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 APPLICATIONS

NTE251

Abstract: Darlington 40A
Contextual Info: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

DARLINGTON 3A 100V npn

Abstract: hfe 2500 NTE264
Contextual Info: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

BDX67

Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier

MJ4035

Abstract: Darlington Transistors marking code TO3 "Darlington Transistors" MJ4032 transistors pnp 100v 10A
Contextual Info: Central MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier

NTE249

Abstract: SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier
Contextual Info: NTE249 NPN & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

IB 100MA NPN

Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
Contextual Info: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃

npn transistor 100v min

Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn
Contextual Info: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃

NTE270

Contextual Info: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

Contextual Info: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available

150w darlington transistor to3 package

Abstract: LE17 MJ4035 TRANSISTOR C 1177
Contextual Info: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available

MJ11019

Abstract: MJ11020
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 400 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -200V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A

Contextual Info: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO

BDW42

Abstract: BDW47 147 B transistor npn DARLINGTON 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A

npn DARLINGTON 10A

Abstract: TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS

TIP145

Abstract: Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and

tip140

Abstract: darlington TIP142 power amplifier TIP141 TIP142 npn DARLINGTON 10A TIP-142 tip142 darlington NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP140/141/142 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP145/146/147 APPLICATIONS ·Designed for general–purpose amplifier and

SE9401

Abstract: VCe-30V 435-1B24
Contextual Info: SE^OO SESkO] SESkOl ♦I Central Semiconductor Central Semiconductor Silicon PNP Transistor Darlington Power 1 4 8 -B Lamar S treet W est Babylon, N ew York 1 1 7 0 4 JEDEC T0-220 Case DESCRIPTION The CENTRAL SEMICONDUCTOR SE9*»00. 01, 02 are Silicon PNP Epitaxial Base, Monolithic

Contextual Info: roaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TIP147T DESCRIPTION • High DC Current Gain: h FE = 1000(Min)@ IC=-5A • Collector-Emitter Sustaining Voltage-

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: TIP142 TIP140 TIP147 tip142 tip147 darlington TIP142 power amplifier tip147 transistor tip142,tip147 amplifier circuits TIP145 TIP141
Contextual Info: TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage VCEO sus = 60V (Minimum) - TIP140, TIP145 = 80V (Minimum) - TIP141, TIP146

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TIP142T Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- ., /"S, r -^ J • : h FE =1000(Min)@l c -5A A x • Collector-Emitter Sustaining Voltage-

Contextual Info: ^£ii.£u <z3s.ml-C.ondu.ckoi L/-^ioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 TIP142 Silicon NPN Darlington Power Transistor f DESCRIPTION • High DC Current Gain: h FE =1000(Min)@l c =5A