10X13 Search Results

Contextual Info: NO. OF POS. PART NO. A PCS—E36LKPA— ->• PCS—E36LKPB—( ) PCS—E50LKPA—( ) PCS—E68LKPA—( ) 36 10x1 1 30.5 40.2 50 10x12 39.2 48.9 10x13 50.6 60.3 58.2 67.9 68 PCS—E68LKPB—( ) PCS—E80LKPA—( ) PCS—E80LKPB—( ) A DIMENSIONS C B 80

Contextual Info: RXG Series Standard Rating ØDxL mm 8x12 10x13 8x16 8x20 10x16 10x20 10x25 10x30 12.5x20 12.5x25 12.5x30 12.5x35 16x20 16x25 16x32 18x20 V C ap uF 680 820 1000 1200 1200 1500 2200 2700 3300 3900 4700 5600 5600 6800 8200 6800 6.3 Impedance ( ) 100 KHz 20°C

OB 3.5 750

Abstract: 8x12 1S50
Contextual Info: 10 1 A C ( h F) 16(1 C ) Rtf Me PgtniTOta 8X12 1.00 170 R tf size rwiara 25(1 E) mm R tf sire 47 470 1 00 101 220 221 10X13 0.60 250 10X13 3 30 331 10X16 0.40 370 10X16 470 471 10X16 0.40 370 10X20 1000 102 13X20 0.16 750 13X25 2200 2 22 16X25 0.00 1250

DNP resistors

Abstract: AN1459 V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE
Contextual Info: ISL8107EVAL2Z Application Note June 9, 2009 AN1459.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

476C

Abstract: transistor 0882 330 0715 474CKH050M
Contextual Info: CKE/ CKH +105°C General Purpose Aluminum Electrolytic Capacitors FEATURES • Lead Free Leads ■ In Stock ■ Standardized Case Sizes ■ Multiple Case Styles SPECIFICATIONS ±20% at 120Hz, 20°C Operating Temperature Range -55°C to 105°C 6.3 to 100WVDC

L4002G

Contextual Info: MINIATURE SIZE TK Wide Temperature Range Series High temperature 105oC and high reliability . SPECIFICATION Item Characteristic Operation Temperature Range 55 Rated working Voltage 105oC 6.3 100VDC Capacitance Tolerance o I 0.03CV + 40 A max 10 13 16 20

ua 471

Contextual Info: RADIAL TYPE SK Standard, For General Purposes Series LK SK SM • SK series has high value of CV for general purposes. SPECIFICATION Characteristic Item Operation Temperature Range -25 ~ +85oC -40 ~ +85oC Rated Working Voltage 6.3 ~ 100VDC 160 ~ 450VDC ±20% M

Contextual Info: FB CHANGZHOU 105°C HUA WEI E L E C T R O N IC S C O .L T D . C D 71H M Bi-polar Standard series, used In polarity reverse and change circuits Specifications Item #14 Performance Characteristics Operating temperature rang -40 - +105‘C S f f i i l l l m l Rated voltage range

bx13

Abstract: c0210 8x36 CD210 8X12 SX11
Contextual Info: X r o iS S ' iS fflffl CD210S Wide temperature, for general purpose (CD210 Series) Case size Permit ripple current D xL(mm) — _ W V(V) 6.8 6R8 10 100 22 220 33 330 6.3 10 16 25 0J 1A 1C 1E 20 5X11 5X11 41 35 1V 5X11 24 5X11 36 5X11 32 52 5X11 37 5X11

tt 2146

Abstract: WVS 64 20C3
Contextual Info: Height 5mm,wide temperature range W ID E T EM P E RA T U RE RANGE S E R IE S E & « É $ q Da • ■ ■ ■ Wide temperature range of -40 - +105°C Standard series for general purposes Voltage range of 6 .3 -4 5 0 V Load life of 2000 hours at 105°C SPECIFICATIONS

TSOP56

Abstract: 2N 5551 datasheet A0-A21 M58LW032D
Contextual Info: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME

Contextual Info: SMD Aluminum Electrolytic Capacitor – JCK FEATURES Ø Ø Ø Ø Chip type, operating with wide temperature range -40~+105℃. Load Life of 1,000~2,000 hours Designed for surface mounting on high density circuit board. Emboss carrier tape packing system is available for automatic insertion.

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

sanyo OS-CON sepc 470

Abstract: panasonic Radial lead MSL level
Contextual Info: PTH03060Y PTH05060Y, PTH12060Y www.ti.com SLTS222A – MARCH 2004 – REVISED OCTOBER 2005 10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • • • • • • • • • VTT Bus Termination Output Output Tracks the System VREF 10 A Output Current

Contextual Info: 2013-2장 2012.11.22 5:30 PM 페이지47 G4-1.25G Mac 1 JETPDF 2400DPI 175LPI T CONDUCTIVE POLYMER ALUMINUM ELECTROLYTIC CAPACITORS Upgrade FJ Lead type, With Conductive Polymer Series Hi-CAP •Low ESR, high ripple current ·Load life for 2000 hours at 105°

fb 4710

Contextual Info: 2013-2장 2012.11.22 5:30 PM 페이지45 G4-1.25G Mac 1 JETPDF 2400DPI 175LPI T CONDUCTIVE POLYMER ALUMINUM ELECTROLYTIC CAPACITORS FB Lead type, With Conductive Polymer Series Hi-CAP •Low ESR, high ripple current ·Load life for 2000 hours at 105° C ·Complied to the RoHS directive

4GB MLC NAND

Abstract: SAMSUNG NAND Flash MLC
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

28F320J3A

Abstract: 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth
Contextual Info: TA254 TECHNICAL ARTICLE M58LWxxC and M58LWxxD: ST Introduces a New Family of Flash Memories for High Performance Applications Ruggero De Luca, Roberto Incerto, Marc Guedj, Flash Memory Division, STMicroelectronics, Agrate, Italy To meet designers' needs for Flash memories for

chipset mtbf

Contextual Info: PTH03060Y PTH05060Y, PTH12060Y www.ti.com SLTS222A – MARCH 2004 – REVISED OCTOBER 2005 10-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES FEATURES • • • • • • • • • VTT Bus Termination Output Output Tracks the System VREF 10 A Output Current

Contextual Info: PZA CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS PZA NEW SERIES High Voltage（~63V.DC , Ultra Low ESR ◆FEATURES ・High Voltage （∼63V.DC), Ultra Low ESR, High Ripple Current ・Load Life : 105℃ 3000hours ・RoHS compliance ◆SPECIFICATIONS

Contextual Info: m\ A L U M IN U M ELECTROLYTIC C APACITO R NORTH AMERICAN CAPACITO bbE D TM • N ACC 0004150 SfiD series r a Jm U i^ D D F O R IN D U ST R IA L U S E C 1 0 5 t ) •n m m m e Has c io5°c) ° c h a ra c te ris tic s of w ith s ta n d in g 105°C a nd good r e ­