109 TRANSISTOR Search Results

2SA1807

Abstract: A331 2SA1862 96-109-A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45

Contextual Info: VCO-109 Voltage Controlled Oscillator 900-1800 MHz DESCRIPTION The VCO-109 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

ZO 109

Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.

2N9303

Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
Contextual Info: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2

transistor KSA

Abstract: AF109R
Contextual Info: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .

cross reference zener diodes

Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
Contextual Info: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers

MDR6100-16000

Contextual Info: PHASE LOCKED OSCILLATOR MODEL MDR6100-16000 16 GHz Features ! ! ! ! Low Phase Noise: -109 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (GHz)2 Mechanical Tuning

24v active clamp forward converter

Abstract: Theory of Modern Electronic Semiconductor fuses ADM1070 EXB30 EXB30-24D05-3V3 EXB30-24D3V3-2V5 EXB30-48D05-3V3 EXB30-48D3V3-2V5 optocoupler a 2219 K 1358 fet transistor
Contextual Info: EXB30 DUAL Application Note 109 1. Introduction 2 2. Models and Features Features 2 3. General Description Electrical Description Physical Construction 2 3 4. Features and Functions Wide Operating Temperature Range Output Voltage Adjustment Remote On/Off Constant Switching Frequency

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

IC 555 timer monostable

Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
Contextual Info: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.

BC109

Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.

CHN G4 120

Abstract: chn 752 chn 731 CHN G4 MCP3901 chn 751 chn G4 210 PIC32 chn 608 Rogowski
Contextual Info: MCP3901 Two-Channel Analog Front End Features Description • Two Synchronous Sampling 16/24-bit Resolution Delta-Sigma A/D Converters with Proprietary Multi-Bit Architecture • 91 dB SINAD, -104 dBc Total Harmonic Distortion THD (up to 35th harmonic), 109 dB Spurious-free

planar transformer theory

Abstract: OPTOCOUPLER voltage output linear TDK U 2178 24v active clamp forward converter EXB30-48D05-3V3 pcb layout of water level controller EXB30 EXB30-24D05-3V3 EXB30-24D3V3-2V5 EXB30-48D3V3-2V5
Contextual Info: EXB30 DUAL SERIES NEW Product Application Note 109 Rev. 02 - Sept. 2000 • • • • • • • • • • Two independent positive outputs Output voltage tracking High efficiency Approved to EN60950, UL/cUL1950 Operating ambient temperature of -40°C to +70°C

Contextual Info: R1212D SERIES STEP-UP DC/DC CONTOLLER NO.EA-109-080117 OUTLINE The R1212D Series are CMOS-based PWM step-up DC/DC converter controllers with low supply current. Each of the R1212D Series consists of an oscillator, a PWM comparator circuit, a reference voltage unit, an

TLV2322

Abstract: TLV2322ID TLV2322IDR TLV2322IP TLV2322IPWLE TLV2322Y
Contextual Info: TLV2322I, TLV2322Y LinCMOS LOW-VOLTAGE LOW-POWER DUAL OPERATIONAL AMPLIFIERS S L O S 109 - MAY 1992 _ Wide Range of Supply Voltages Over Specified Temperature Range: Ta = -40°C to 85°C . . . 2 V to 8 V Fully Characterized at 3 V and 5 V

transistor bc 325

Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Contextual Info: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.

marking code 506k

Abstract: HAL 506K 3 PIN hall effect 506k Hall Effect Sensor Family 503K motor power window hall sensor 506a hall 506A Magnetic Sensors 6 PIN hall effect 506k hall 502a an 503 hall sensor
Contextual Info: MICRONAS Edition Feb. 14, 2001 6251-109-4E 6251-485-2DS HAL501.506, 508, 509, HAL516.519, 523 Hall Effect Sensor Family MICRONAS HAL5xx Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview

mosfet triggering circuit for inverter

Abstract: digital triggering scr P-Channel Depletion Mosfets SCR TRANSISTOR SCR RECTIFIER scr triggering two transistor forward 1N914 AN-109 HP5082-2835
Contextual Info: ANALOG ► DEVICES AN-109 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Understanding and Preventing Latch-Up in CMOS DACs by Mark Alexander INTRODUCTION Many designers now use analog and digital CMOS ICs in their de­

Contextual Info: MICRONAS Edition Oct. 20, 1999 6251-109-4E 6251-441-1DS HAL800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code Operating Junction Temperature Range TJ

HS-3530RH

Abstract: HS2-3530RH-8 HS2-3530RH-Q
Contextual Info: HS-3530RH Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout • Radiation Environment - Neutron Fluence Φ 5 x 1012 n/cm2 (E ≥ 10KeV) - Gamma Rate (γ) 1 x 109 RAD (Si)/s - Gamma Dose (γ) 1 x 106 RAD (Si) 8 LEAD METAL CAN PACKAGE (CAN)

Contextual Info: R1 2 1 2 D SERI ES STEP-UP DC/DC CONTROLLER NO.EA-109-111123 OUTLINE The R1212D Series are CMOS-based PWM step-up DC/DC converter controllers with low supply current. Each of the R1212D Series consists of an oscillator, a PWM comparator circuit, a reference voltage unit, an

6251-10

Abstract: xatl 18VDDP LC897
Contextual Info: Ordering number : ENN6251 CMOS IC LC897127K SCSI CD-ROM Decoder with On-Chip DVD Interface Overview Package Dimensions unit: mm 3214-SQFP144 [LC897127K] 0.5 1.25 22.0 20.0 0.145 1.25 73 108 109 72 1.25 The LC897127K is a CD-ROM decoder that includes an on-chip DVD interface. Since the LC897127K also

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.