1061M Search Results
1061M Price and Stock
onsemi NCP81061MNTWGIC GATE DRVR HALF-BRIDGE DL QFN |
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NCP81061MNTWG | Digi-Reel | 2,999 | 1 |
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NCP81061MNTWG | Reel | 3,572 |
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NCP81061MNTWG | 10,550 | 5 |
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NCP81061MNTWG | 86,990 | 1 |
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NCP81061MNTWG | 1 |
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NCP81061MNTWG | 12,000 |
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Power Integrations CPZ1061M-TLIC OFFLINE SWITCH FLYBACK MINSOP |
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CPZ1061M-TL | Digi-Reel | 1,551 | 1 |
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CPZ1061M-TL | Reel | 18 Weeks | 2,000 |
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CPZ1061M-TL |
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CPZ1061M-TL | Cut Tape | 1,810 | 1 |
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CPZ1061M-TL | 1 |
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CPZ1061M-TL | 20 Weeks | 2,000 |
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Globetek Inc 3021061M8701(R)NEMA 5-15P TYPE B C13 1.8M CORD |
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3021061M8701(R) | Bulk | 425 | 1 |
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Belden Inc FM4MMB1061MFMT OM4 MPO12(M-M) B 12F 61M |
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FM4MMB1061M | Bulk | 1 |
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FM4MMB1061M |
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Pasternack Enterprises PE3FCA106-1MFIBER OPTIC PATCH CABLE, SIMPLEX |
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PE3FCA106-1M | Bag | 1 |
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PE3FCA106-1M |
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PE3FCA106-1M | 241 | 1 |
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1061M Datasheets Context Search
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Contextual Info: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with |
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WEDPN8M64V-XBX 8Mx64 125MHz WEDPN8M64V-XBX 64MByte 512Mb) 100MHz | |
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Contextual Info: White Electronic Designs WEDPN8M64V-XBX 8Mx64 Synchronous DRAM* * D GENERAL DESCRIPTION FEATURES The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a |
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WEDPN8M64V-XBX 8Mx64 64MByte 512Mb) 432-bit 100MHz 125MHz 133MHz* 133MHz | |
MW antenna
Abstract: la1060 multi vibrator circuit LA1061M MFP14S signal antenna Diagram
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EN3044A LA1061M LA1061M LA1060 MW antenna multi vibrator circuit MFP14S signal antenna Diagram | |
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Contextual Info: Ordering number : EN3044A Monolithic Linear IC 1061M Antenna Switching Controller Overview Package Dimensions The 1061M is an antenna switching controller for mobile radio equipment. The 1061M uses a number of inputs from the receiver circuitry to select the main antenna or sub-antenna |
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EN3044A LA1061M LA1061M LA1060 | |
Mys 99 178
Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
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AA994896G 2A-M18KS08-WP-C1 1234C 11PFA 14PFA 1001D VAP21001C VAP21004H VAP21015C 2001G Mys 99 178 MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102 | |
WEDPN4M64V-XBXContextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a |
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WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX | |
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Contextual Info: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with |
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WEDPN8M64V-XBX 8Mx64 125MHz 64MByte 512Mb) 432-bit 100MHz | |
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Contextual Info: ICS87322BI LOW SKEW, ÷1/÷2, 2.5V/3.3V DIFFERENTIAL-TO-LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 Differential-to-2.5V/3.3V LVPECL/ECL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High |
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750MHz 180ps 500ps MC100LVE222 ICS87322BI ICS87322BI 87322BYI | |
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Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s |
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4Mx64 125MHz WEDPN4M64V-XBX WEDPN4M64V-XBX 32MByte 256Mb) 100MHz 125MHz | |
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Contextual Info: White Electronic Designs WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing |
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8Mx64 WEDPN8M64V-XBX WEDPN8M64V-XBX 64MByte 512Mb) 100MHz 125MHz 133MHz* 133MHz | |
WEDPN4M64V-XBXContextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a |
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WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit programme50) 100MHz 125MHz WEDPN4M64V-XBX | |
WEDPN16M64V-XBX
Abstract: WEDPN8M64V-XBX
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WEDPN8M64V-XBX 8Mx64 64MByte 512Mb) 432-bit 100MHz 125MHz 133MHz* 133MHz WEDPN16M64V-XBX WEDPN8M64V-XBX | |
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Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 1090.0MHz Part No: MA09528 Model: TA0691A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 20dBm 2. DC voltage: 0 V |
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MA09528 TA0691A 20dBm 1096MHz 1096MHz 924MHz 944MHz 1051MHz 1061MHz 2000MHz | |
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Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS87322BI LOW SKEW, ÷1/÷2, DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 Differential-to-2.5V/3.3V LVPECL/ECL Clock Generator HiPerClockS |
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750MHz 500ps MC100LVE222 ICS87322BI ICS87322BI 87322BYI | |
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