1061M Search Results

ASTM F1249

Abstract: ASTM D2103 EIA-583 F1249 F-1249 MIL-D-3464 JEDEC J-STD-033b F1249-90 ESD S11.11 MIL-D-3464 1 unit size
Contextual Info: TECHNICAL BULLETIN TB-2031 Statshield Moisture Barrier Bags Application Instructions Made in the United States of America Construction Desco’s Statshield® Moisture Barrier Bags manufactured from a static dissipative metalized laminated film. The metal layer of the Desco’s

Contextual Info: um LI NE AR T E C H N O L O G Y CORP 43E D • SS104b. f i QQQ5SE3 b «LTC LTC1061 M/883 and LTC1061 AM/883 TECHNOLOGY DESCRIPTION The LTC1061/883 consists of three high perfor­ mance, universal filter building blocks. Each filter building block together with an external clock and 2

21502a

Abstract: TMC1061 TMC1061B3B TMC1061B3F
Contextual Info: TMC1061 110-Bit High-Speed Microprocessor-Compatible A/D Converter with Track/Hold Employing a "half-flash" A/D conversion technique, the TMC1061 CMOS 10-bit A/D converter offers high-speed conversions while dissipating only 235 m illiwatts. The analog input signal to the TMC1061 is tracked and held by

WEDPN4M64V-XBX

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

Contextual Info: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

WEDPN16M64V-XBX

Abstract: WEDPN8M64V-XBX
Contextual Info: WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing

ICS87322BI

Abstract: ICS87322I MC100LVE222
Contextual Info: ICS87322BI Integrated Circuit Systems, Inc. LOW SKEW, ÷1/÷2, 3.3V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 3.3V LVPECL/ ECL Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock

Contextual Info: White Electronic Designs WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing

c1061

Abstract: but c1061
Contextual Info: r#?lrV TMC1061 10-Bit High-Speed Microprocessor-Compatible A/D Converter with Track/Hold Features Employing a "half-flash" A/D conversion technique, the TMC1061 CMOS 10-bit A/D converter offers high-speed conversions w hile dissipating only 235 m illiwatts. The

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

APP3992

Abstract: DS2786 "fuel gauge" AN3992
Contextual Info: Maxim/Dallas > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: OCV, Open Circuit Voltage, Fuel Gauge, OCV Fuel Gauge Jan 26, 2007 APPLICATION NOTE 3992 Interpreting the Open-Circuit-Voltage OCV Fuel Gauge of the DS2786 Abstract: The DS2786 is an open-circuit-voltage (OCV) based fuel gauge that reports the total energy that is

Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

Contextual Info: White Electronic Designs WEDPN4M64V-XBX FINAL* 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a

Contextual Info: ICS87322BI Integrated Circuit Systems, Inc. LOW SKEW, ÷1/÷2, 3.3V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 3.3V LVPECL/ECL Clock Generator and a member of HiPerClockS the HiPerClockS™ family of High Performance

Contextual Info: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: White Electronic Designs WEDPN8M64V-XBX 8Mx64 Synchronous DRAM* * D GENERAL DESCRIPTION FEATURES The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a

MW antenna

Abstract: la1060 multi vibrator circuit LA1061M MFP14S signal antenna Diagram
Contextual Info: Ordering number : EN3044A Monolithic Linear IC 1061M Antenna Switching Controller Overview Package Dimensions The 1061M is an antenna switching controller for mobile radio equipment. The 1061M uses a number of inputs from the receiver circuitry to select the main antenna or sub-antenna

Contextual Info: Ordering number : EN3044A Monolithic Linear IC 1061M Antenna Switching Controller Overview Package Dimensions The 1061M is an antenna switching controller for mobile radio equipment. The 1061M uses a number of inputs from the receiver circuitry to select the main antenna or sub-antenna

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

WEDPN4M64V-XBX

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: ICS87322BI LOW SKEW, ÷1/÷2, 2.5V/3.3V DIFFERENTIAL-TO-LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 Differential-to-2.5V/3.3V LVPECL/ECL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High

Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s