1035 TRANSISTOR Search Results

1035 transistor

Abstract: M.P transistor
Contextual Info: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

HFBR-2522

Contextual Info: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated

Contextual Info: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

edge detector robot circuit diagram

Abstract: robot control transmitter and receiver circuit "x-ray machine" SIMPLE VIDEO TRANSMITTER CIRCUIT DIAGRAM simple heart rate monitor circuit diagram heart monitor HFBR-0501 electroca "Photo Interrupter" Application Note electrocardiograph circuit schematic
Contextual Info: H Versatile Link Application Note 1035 Introduction This application note describes how fiber optics can be used to solve many different types of application problems, introduces Hewlett-Packard’s Versatile Link plastic fiber optics, and shows how to design a fiber-optic link using the Versatile Link.

circuit diagram for simple transmitter

Abstract: photo interrupter module agilent photo interrupter "x-ray machine" circuit diagram of rc transmitter and receiver light following robot diagram edge detector robot circuit diagram "Photo Interrupter" Application Note block diagram for optical fiber receiver basic principle of ups system
Contextual Info: Versatile Link Application Note 1035 Introduction This application note describes how fiber optics can be used to solve many different types of application problems, introduces Agilent Technologies’ Versatile Link plastic fiber optics, and shows how to design a fiber-optic link using the Versatile Link.

1035MP

Contextual Info: 1035MP 35 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for

1035 transistor

Abstract: DBL 1035 DBL1035
Contextual Info: PLL FM STEREO MULTIPLEX DBL 1035 con tain s 2 fun ctions of skip noise control and pilot cancel. □ FUNCTIONS O Pilot canceler. O H igh-cut controller HC C O Stereo noise controller(SNC) O VCO oscillation stop O A utom atic selection between stereo and mono

Contextual Info: 1035 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

bc461

Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
Contextual Info: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

bu126

Abstract: Switched Mode Power Supply
Contextual Info: TOSHIBA {DISCRETE/OPTO} ~5h D E ^ I D ^ a S O 000flCH3 WÊÊÊÊÊÊÊÊÊÊÊtÊÊÊÊIÊÊÊÊÊ 9097250 TOSHIBA bbC 08093 CDISCRETE/OPTO 0 ^ 2 3 -// BU126 SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE NPN SILICON POWER TRANSISTOR' INTENDED Unit in mm

Contextual Info: Is > v FMS3/FMS4 $ / J ransistors x bf 2 =*• '> t \*-f \ s - i-W y9a ? ; K - ^ - ii' K pnp •> 'J ^ > h 7 > y x $ FMS3 FMS4 — ftx/M t - § - * ilPiffl/G eneral Small Signal Amp. Epitaxial Planar Dual Mini-Mold PNP Silicon Transistors • -i- i[-sA ;,\ K

PU4420

Abstract: PU3120 PU3220 PU4120 PU4220 PU4520 JU254
Contextual Info: Power Transistor Arrays PU3220, PU4220, PU4520 Silicon NPN Epitaxial Planar Darlington Type PU3220, PU4220, PU4520 Package Dimensions PU3220 Unit:mm 4.2max. 20.5max. Power Amplifier, Switching Complementary Pair with PU3120, PU4120, PU4420 •Features -0:5 + 0.15

PU3120

Abstract: PU3220 PU4120 PU4220 PU4420 PU4520
Contextual Info: Power Transistor Arrays PU3220, PU4220, PU4520 PU3220, PU4220, PU4520 ! Package Dimensions Unit’. mmj PU3220 20.5max. Power Amplifier, Switching Complementary Pair with PU3120, PU4120, PU4420 • Features 4 .2 m a x . l|M • High DC current gain hpE • H igh speed sw itching

250v 250w

Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 250W 60MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

2N1035

Abstract: 2N1028 2N1025 2N1036 2N1037 2N1219 2n3298 2N3342 2n328a
Contextual Info: small signal transistors 66 SILICON PNP ALLOY GENERAL PURPOSE TRANSISTORS TYPE NUMBERS 2N 1429 2N 2175 2N 2177 2N 1119 2N 1028 2N 1228 SHA 7532 2N 1229 SHA 7536 2N 1024 2N 1027 2N 3342 2N 3343 2N 1118 2N 1118A 2N 1643 2N 1222 2N 1221 2N 1220 2N 1219 2N 3344

4050 cmos

Abstract: 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor
Contextual Info: LRGAT75F100 1000V 75A LRGAT150F100 1000V 150A ZVS THYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power converters up to 80KHz operating frequency and 10KW output power.

2SD2436

Abstract: 2SD2433 2SD2434 2S897 2SD1995 2SC3312 2sb1446 2SD2458 2SD2529 D49 transistor
Contextual Info: This I Silicon Small Signal Transistors _o UJ ru □a Copyrighted Ln >General-use Low Frequency Amplifiers and Others Package No. Applica­ tion Functions nj S S Mini Type (D1) ! 2SB1462 I2SD2216 □ □ b-1 S Mini Type (D5) ( 2SB1218A I 2S D I8I 9A Mini Type

Contextual Info: ARF460A ARF460B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 250W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized

Contextual Info: Pow er Transistor A rrays PU 3220, PU 4220, PU 4520 PU3220, PU4220, PU4520 Package Dim ensions U nit'.m m j P U 3220 Silicon NPN Epitaxial Planar Darlington Type 4.2max. 20 .5ma x. Pow er Am plifier, Switching C om plem entary Pair with P U 3 1 2 0 , P U 4 1 2 0 , P U 4 42 0

2sk type

Abstract: transistor+2sk
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta —25 °C) Application Pch Switching b (A) (W) max. (fi) 1 Y* 1 typ. (S) (ns) ti (ns) td(off) (ns) Package (V) (on) ton

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

AMPLIFIER 1500w

Contextual Info: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

AMPLIFIER 1500w

Contextual Info: S D ARF1502 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 65V 1500W 40MHz The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.