1034 TRANSISTOR Search Results

2N1656

Abstract: 2N2176 2n1275 2n327A
Contextual Info: small signal transistors 67 SILICON PNP ALLOY GENERAL PURPOSE TRANSISTORS RATED BREAKDOWN VOLTAGES TYPE NUMBERS 2N 1441 2N 327A 2N 3278 2N 1034 2N 1439 2N 3345 2N 3346 J 2N 1440 OSHA 7531 2N 1474 ¢ 2N 1232 ¢ SHA 7534 ¢ 2N 1474A ¢ 2N 1233 OSHA 7538 2N 1475

Contextual Info: 1034 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

BGY45B

Contextual Info: N AtlER PH IL I P S / D I S C R E T E i 860 8 1034 ObFT • bbS3^3l" O O l ^ s " T DT ‘-7 * y ^ o f-C > / BGY45B _/ V V.H.F. BROADBAND POWER MODULE V.H.F. broadband power amplifier module prim arily designed for mobile communications equipment,

IRF045

Abstract: RF045 100-C IRF044 IRFQ44 R1LV
Contextual Info: HE 0 I 4055452 000*1034 3 | Data Sheet No. PD-9.584A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I«R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF0 4 4 IRF0 4 5 N -C H A N N E L Product Summary The HEXFET® technology is the key to International

2SB913

Abstract: 2SD123 1034B
Contextual Info: Ordering number:1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2022A [2SB913/2SD1230]

2SB913

Abstract: 2SD1230 ITR08710
Contextual Info: Ordering number:ENN1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2022A [2SB913/2SD1230]

2SB913

Abstract: 2SD1230 ITR08710
Contextual Info: Ordering number:ENN1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2022A [2SB913/2SD1230]

transformer ferrite core

Abstract: noyau de ferrite N2468 TRANSISTOR 641 transistor BU 110 ferrite core coil 1-10 mH 1-4 A schema d un transistor en thomson ferrite core transistor Bu thomson deflection coil
Contextual Info: BU 129 NPN S ILIC O N T R A N S IS T O R , TR IP L E D IF F U S E D MESA TR A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E The BU 129 transistor is primarly intended for use in horizontal deflection output stage for 110° • 12" 20 mm neck black and white

Contextual Info: O rdering number: EN 550E J SAW O N 0.550 E _ 2 S D 8 7 9 NPN Epitaxial Planar Silicon Transistor 1.5 V and 3 V Strobe Applications Features . In applications where two NiCd batteries are used to provide 2.4V, two 2SD879 transistors are used.

S1854

Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Contextual Info: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:

2N4393, NATIONAL

Abstract: transistor pn4393 2N4392 NATIONAL SEMICONDUCTOR transistor 4393 jfet transistor 4392 national 2n4391 2N4391 2N4393 2N4393 national
Contextual Info: National Semiconductor 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 MMBF4391 MMBF4392 MMBF4393 TO -2 Î8 SOT-23 T L /G /10100-6 T L /G /1 0 1 0 0 -2 General Purpose N-Channel JFET Transistor

transistor BU 104

Abstract: TRANSISTOR 612 transistor BU 102 transformer ferrite core transistor BU 110 BU104 emetteur power transfo deflexion coil transformer ferrite
Contextual Info: BU 104 NPN S IL IC O N T R A N S IS T O R , D IF F U S E D M E S A TRAN SISTO R NPN SILICIUM, M ESA D IFFU S E Th e B U 1 0 4 is a fast switching high voltage transistor. It is p rim a rly intended fo r use in ho rizontal d e fle x io n o u tp u t stage o f black and

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU3119 transistor C1505 i32652 PU3219 PU4119 PU4219 PU4419 PU4519 darlington pair transistor 1A
Contextual Info: PU3219, PU4219, PU4519 Power Transistor Arrays PU3219, PU4219, PU4519 Silicon NPN Epitaxial Planar Darlington Type Package Dimensions PU3219 Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 • Features • • • • • anlflifflVllf

transistor t2F

Abstract: 68fl
Contextual Info: Philips Semiconductors Product specification PNP switching transistor PMST2907A FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 60 V). 1 2 emitter APPLICATIONS 3 collector base • Medium power switching • General purpose amplification.

2sk type

Abstract: transistor+2sk
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta —25 °C) Application Pch Switching b (A) (W) max. (fi) 1 Y* 1 typ. (S) (ns) ti (ns) td(off) (ns) Package (V) (on) ton

transistor BU 110

Abstract: BU109 transistor BU 109 deflexion BU109S N1034 thomson ferrite core
Contextual Info: BU109 IMPN SILIC O N TR A N S IS TO R , D IF F U S E D MESA TRANSISTO R NPN S IL IC IU M , MESA D IF F U S E ^ Preferred device D is p o s itif re co m m a n d é The BU 109 is a fast switching high voltage transistor. It is primarly intended for use in horizontal deflexion output stage of black

Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

DIODE 349

Abstract: SIEMENS 1035 BUZ348
Contextual Info: SIEMENS BUZ 349 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 Vbs 100 V b R o s io n Package Ordering Code 32 A 0.06 w TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

Contextual Info: MAX5977 RELIABILITY REPORT FOR MAX5977AETP+T PLASTIC ENCAPSULATED DEVICES June 24, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.

Contextual Info: m an A M P com pany 1 RF MOSFET Power Transistor, 120W, 28V DU28120U 2 -1 7 5 MHz Features • • • • • N -C hannel E n h an cem en t M od e D evice DM OS Stru ctu re L o w er C ap acitan ces fo r B ro ad b an d O p eratio n H igh Satu rated O utput P o w er

MPS-H07

Abstract: MPSH07 MPS-H08 VHF Transistors
Contextual Info: MPS-H07 SILICON MPS-H08 NPN SILICON FM/VHF TRANSISTORS NPN SILICON ANNULAR TRANSISTORS . . . designed fo r common-base F M /V H F RF am plifier applications. Guaranteed Noise Figure — N F = 3 .2 dB (M ax) @ f = 100 M H z = 3 .5 dB (M ax) @ f = 2 0 0 M H z

SIEMENS 1035

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD BUZ 205 = 400 V = 6.0 A ^D SIonl = 1 - 0 Q • N channel • FREDFET • Enhancement mode • Avalanche-proof • Package: TO -220A B ’ Type Ordering code BUZ 205 C67078-A1401-A2 Maximum Ratings Parameter Drain-source voltage

IL5233G

Abstract: IL5250G IL5212G IL5200G IL5225G IL52XXG 1117 S 3,3 Transistor IL5230G 1117 sot223 scsi electric diagram
Contextual Info: IL52XXG FAMILY OF LOW DROP FIXED AND ADJUSTABLE VOLTAGE REGULATORS OF POSITIVE POLARITY DESCRIPTION The IL52XXG is a low drop voltage regulator which is able to provide output current up to 800mA even in adjustable version Vref=1.25V . There are offered the following output voltages: 1.2 V