1024K Search Results

IS61LPD51236A

Abstract: IS61LPD102418A IS61VPD102418A IS61VPD51236A
Contextual Info: IS61VPD51236a IS61VPD102418a IS61lPD51236a IS61LPD102418a 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

DS1245V

Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
Contextual Info: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola­

34-PIN

Abstract: DS1345 DS1345W DS9034PC
Contextual Info: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8

Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for

8155 intel microcontroller architecture

Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Automotive Temperature Range: —40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Chip-Program

PS08

Abstract: 100C CYM1471 CYM1481
Contextual Info: fax id: 2006 i , *" : -:V:V:V:V:V:Tÿ:- : i ^ :^ ; ^3»* i ; i M m i : M M :i : i i CYM1471 CYM1481 ^ i i i i i i yy c y p r e s s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns

RC TOY CAR CIRCUIT DIAGRAM

Abstract: GPC1000A2 SPC1000A2
Contextual Info: GPC1000A2 1024KB Sound Controller MAR. 01, 2006 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS However, GENERALPLUS TECHNOLOGY INC. makes no warranty for any errors which may

IS61LPD102418A

Abstract: IS61LPD51236A IS61VPD102418A IS61VPD51236A
Contextual Info: ISSI IS61VPD51236A IS61VPD102418A IS61LPD51236A IS61LPD102418A 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

M48T248V

Abstract: M48T248Y t248
Contextual Info: M48T248Y M48T248V 5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM FEATURES SUMMARY • 5.0V OR 3.3V OPERATING VOLTAGE ■ REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, and YEARS ■

IS61LPS102418A

Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI 1024Kx18
Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

EDI9G361024C

Contextual Info: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy

72-PIN

Abstract: DS3803
Contextual Info: DS3803 1024k Flexible NV SRAM SIMM www.dalsemi.com FEATURES PIN ASSIGNMENT 1 Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits 10 years minimum data retention in the absence of external power Nonvolatile circuitry transparent to and independent from host system

29F080

Abstract: 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14
Contextual Info: PRELIMINARY MX29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns

T2316160A

Contextual Info: tm TE CH T2316160A 1024K x 16 DYNAMIC RAM DRAM FAST PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 5V ±10% power supply. • All device pins are TTL- compatible. • 1K-cycle refresh in 16ms. • Refresh modes: RAS only, CAS BEFORE

Contextual Info: DALLAS SEMICONDUCTOR DS1248Y 1024K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 128K x 8 NV SRAM directly replaces volatile static

Contextual Info: D S1248/DS1248P PRELIMINARY DALLAS SEMICONDUCTOR DS1248/DS1248P 1024K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real tim e clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 128K x 8 NV SRAM directly replaces volatile static

Contextual Info: D S 1245Y/A B DALLAS SEMICONDUCTOR DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM NC ta 1 32 1 A16 I2 31 1 A14 A12 • Unlimited write cycles

Contextual Info: WZ4KX3Ö 5KAM Module 1024Kx36 Static RAM CMOS, High Speed Module Features 1024Kx36 bit CMOS Static The EDI9G361024C is a high speed 36 megabit Static RAM Random Access Memory module organized as 1024K words by 36 bits. This module • Access Times: 17, 20 and 25

Contextual Info: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a

Contextual Info: ! j * . 1024K32-XPBX 1024Kx32 FLASH BALL GRID ARRAY PRELIMINARY * FEATURES • Access Times of 9 0 ,150ns ■ Organized as 1024Kx32 ■ Perimeter Ball Grid Packaging ■ Commercial and Industrial Temperature Ranges • 35mm BGA: ■ 5 Volt Power Supply, 12 V pp

B 0920

Contextual Info: D S 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 11 1 II 2 A U II 3 A12 II 4 A7 II 5 32 1I V CC 31 1I A15 30 1I NC 29 1I WE 28 Ij A13 NC A16 • Data is automatically protected during power loss

Contextual Info: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION

LY6210248

Abstract: SRAM TTL 1024K x 8
Contextual Info: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available

23383-C

Contextual Info: N16L163WC2C NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com Advance Information 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 16 bit Overview Features The N16L163WC2C is an integrated memory