PACKAGE30 Search Results

HY53C464

Abstract: HY53C464-70 536X4 65536x4
Contextual Info: SIE D HYUNDAI ELECTRONICS • 4b7SOññ 0000SL3 32T « H Y N K MYUNDA HY53C464 SEMICONDUCTOI MK 4 liii M O* | U \ \ 1 M 121202 B-JAN 92 . FEATURES DESCRIPTION • Low power dissipation for HY53C464L — Operating Current, 100ns : 50mA (max.) — TTL Standby C u rren t: 2mA (max.)

ISL6840

Abstract: ISL6840IB ISL6840IBZ ISL6841 ISL6842 ISL6843 ISL6844 ISL6845 ISL6541 ISL6844IBZ
Contextual Info: ISL6840,41,42,43,45 December 2004 数据资料 改善的业界标准单端电流模式 PWM 控制器 FN9124.3 主要特点 可调频率低电源、电流模式 PWM 控制器的系列： ISL6840, ISL6841, ISL6842、ISL6843、ISL6844 和 ISL6845 是设计用于大范围能量变换应用，包括升压、反馈

2.2nf 2000v

Abstract: ISL6840 ISL6840IB ISL6840IBZ ISL6841 ISL6842 ISL6843 ISL6844 ISL6845 ISL6844IBZ
Contextual Info: ISL6840,41,42,43,45 December 2004 數据資料 改善的業界標准單端電流模式 PWM 控制器 FN9124.3 主要特點 可調頻率低電源、電流模式PWM控制器的系列： ISL6840, ISL6841, ISL6842、ISL6843、ISL6844和ISL6845是設計用

HY53C256-10

Abstract: HY53C256
Contextual Info: SIE I HY U N D A I E L E C T R O N I C S • 4 b7 5 0 6 ê 0 0 0 0 5 *4? 1 ST ■ HYNK :Y53C256 •HYUNDAI SEMICONDUCTOR 25 ik v 1-Hit ( MOS DK VM M111201B-JAN92 DESCRIPTION FEATURES The HY53C256 is a high speed 262,144X1 bit CM OS dynam ic random access memory.

Contextual Info: HY93C46 •HYUNDAI SEMICONDUCTOR 64 X 16-Bit CM OS SERIAL EE PROM M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers o f 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.