1015 TRANSISTOR Search Results

FUSE 500mA fast 5x20mm

Abstract: Tenma TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Model 72-1015 OPERATING MANUAL Model 72-1015: OPERATING MANUAL TABLE OF CONTENTS TITLE Overview Inspection Safety Information Rules For Safe Operation International Electrical Symbols The Meter Structure Rotary Switch Functional Buttons Display Symbols Measurement Operation

1015 TRANSISTOR DATASHEET

Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR
Contextual Info: 1015 MP 15 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

STR 6454

Abstract: str f 6454 str G 5551 47 datasheet str f 6454 str g 5551 3573 1231 str 6454 datasheet LT 7229 LA 4636 str 6353
Contextual Info: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.

BAT54S

Abstract: DFLS220L LT1946 LT3489 SD25-2R2
Contextual Info: advertisement Drive Large TFT-LCD Displays with a Space-Saving Triple-Output Regulator – Design Note 1015 Jesus Rosales Introduction The power appetite of large TFT-LCDs appears to be insatiable. Power supplies must feed increasing numbers of transistors and improved display resolutions, and do

str 6353

Abstract: str 6454 str w 6353 str f 6454 Commander CV 150 74146 Alexander Hamilton 3573 1231 ME20 str G 5551 47
Contextual Info: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.

telephone circuit with dtmf tp5088

Abstract: mm58167a TP5088 74510 74vhc942 mm58167 74HC 74VHC943 C1995 MM74HC942
Contextual Info: National Semiconductor Application Note 1015 October 1995 When mated with a handful of CMOS peripheral ICs a single-chip CMOS modem device allows you to configure simple inexpensive microprocessor-telephone interface systems with autodial and autoanswer capabilities

1015MP

Contextual Info: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability.

Contextual Info: INTEGRATED CIRCUITS a j S H E E T UMA 1015 M Low-power dual frequency synthesizer for radio communications Product specification Supersedes data of October 1994 File under Integrated Circuits, IC03 Philips Sem iconductors 1995 Jun 22 PHILIPS Philips Semiconductors

siemens modem gsm tc35

Abstract: siemens tc35 9pin D type rs485 pin configuration 9pin D type rs485 configuration Dupline 3800 MAN G 3800 0015 ENG modbus-rtu Dupline siemens modem gsm tc35 driver tc35 gsm modbus Carlo gavazzi dcf77
Contextual Info: Du line Master Channel Generator Types G 3800 0015, G 3800 1015 Fieldbus Installationbus • Programmable channel generator • Option for built-in GSM Modem for monitoring and control via SMS • User-friendly configuration via Windows 98/2000/NT/XP software

Contextual Info: 1763-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)25 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1401-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)250 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

1015 TRANSISTOR DATASHEET

Abstract: 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR
Contextual Info: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for

Contextual Info: 1582-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

KTA1015

Abstract: Transistor GR 1815 GR 1815 c 1815 gr transistor C 1815 KTA1015 transistor C 1815 transistor kta10 KTA1015 0 ktc1815
Contextual Info: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KT A 1015 ( A P P L IC A T IO N S ) • Low Frequency Amplifier ■ Low Noise Amplifier Ç FEATU RES ) • Low Noise, N F = ldB (Typ.), lOdB (Max.) • Excellent hFE Linearity, hFE(O.lmA) /h FE (2mA) =0.95 (Typ.)

TRANSISTOR D 471

Abstract: 25CC M135 M140 SD1015 arco 463
Contextual Info: f H llr l/ lf f t mraj-M » f §I Progresa Powered by Technology 140 Commerce Drive n • i w i v/ Montgomeryville, ■PA 18936-1013 Tel: 215 631-9840 i i i v / i i i u v i 1 1 \#i y V m u . A M . _ SD 1015 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

Contextual Info: SYMBOLS FOR SIMPLE ELECTRICAL CIRCUITS + Voltage Source Current Source es es appears in the circuit for i is is supplied to the circuit for all v DECIMAL FACTOR PREFIXES FACTOR PREFIX SYMBOL 1018 1015 1012 109 106 103 102 101 exa peta tera giga mega E P T

SERVICE-MITTEILUNGEN

Abstract: funkschau VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" ASZ1015 stassfurt luxomat scans-048 stroboskop Servicemitteilungen
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN r a d i o - television AUSGABE: 2/73 DATUM: Febr. 1973 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt 1. Einsatz des Transistors P 217 A aus SU-Import im "Color 20” Der VK-Endtransistor T3 ASZ 1015 wird durch den Typ P 217 A er­

Contextual Info: 1768-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Contextual Info: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240

transistor 1015

Abstract: 2SA1015 A035BJ-01 2SA1015H1015 H1015
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 1015 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A035BJ-01 芯片厚度：240±20µm 管芯尺寸：350x350µm 2 焊位尺寸：B 极 12150µm 2，E 极 16180µm 2

2N4211

Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
Contextual Info: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP

Contextual Info: TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1.25 PCM: W (Tamb=25℃) 1. BASE Collector current 1.5 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Mitsubishi transistor

Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B

QM100TX1HB

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE 1 INSULATED TYPE ! I QMÍ00TX1-HB • lc • • • • Collector current. 1O0A V cex Collector-emitter voltage.6 00V hre DC current gain. 750