1014 Search Results

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

rg5H20

Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
Contextual Info: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

2 watt rf transistor

Abstract: 10 watt power transistor 100 watt transistor transistor Common Base amplifier RF TRANSISTOR 10 WATT common base transistor
Contextual Info: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: 10141-F DESCRIPTION LOGIC DIAGRAM The 10141 is a four-bit shift register that features four separate input terminals for parallel data entry and one each input ter­ minal for serial shift left and serial shift right data entry. The device also provides an

SC11017CN

Abstract: sim 300 modem at commands set SC11017 SC11017CV 74LS306 SC11014
Contextual Info: SC11017 Enhanced Parallel Bus Modem Controller SIERRA SEMICONDUCTOR □ □ Direct interface to SC11004, S C I 1014 and S C I 1015 single chip m odem s Built-in U A RT □ □ □ Com plete "A T " comm and set in firm w are Direct IBM PC bus interface 28-pin D IP or PLCC package

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

10145a

Abstract: 10145ADC J16A 16x4 register file "Random Access Memory"
Contextual Info: 10145A National Semiconductor 10145A 1 6 x 4 Register File Random Access Memory General Description The 10145A is a high-speed 64-bit Random A cce ss M em o­ ry organized as a 16-w ord by 4-bit array. External logic re­ quirem ents are minim ized by internal address decoding,

marking 1t2

Contextual Info: Ultra-High Value Precision Resistors Welwyn 3810 SERIES • Resistance range up to 100 T ohms 1014 ohms • Designed for low current (pica ampere level) measurements • Low voltage coefficient • Hermetically sealed • Leakage current minimised by hermetic

Contextual Info: am ULTRA-HIGH VALUE PRECISION RESISTOR G lass to m etal seal - G lass e n v e lo p e 381 0 SERIES* r • • • • • . Resistance range up to 100T ohms 1014 ohms Low voltage Hermetically sealed Designed for low current (pica ampere level) measurements

RIC0639

Abstract: FM25256B FM25256B-G FM25W256 FM25V02 -G
Contextual Info: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: VIEW FORATURA SU C.S. SUGGESTED PCB LAYOUT X 5 ± 0.05 e J t1±°' — M 4 ±0-1 k — CO DICE VIEW A R T . / p /IV - COLORE / COLOR BIAN CO / WHITE 94213-1014 X 1 . 6 ^ g ‘ 1CX 8 - e 94213-1004 1 3 .2 0 - % NERO /BLACK 7 .0 MATERIALE: BLOCCHETTO: NYLON 6.6 HB

RG5V02

Abstract: fm25v02
Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

91526-1

Abstract: 408-9640 466351-2 Tyco 408-3295 455822-2 455830-1 LR7189 tyco crimp height specification 354500-1 408-8059
Contextual Info: Application Specification 114- 1014 Miniature Rectangular MR Contacts and Housings 11 DEC 09 Rev D All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and inches]. Unless otherwise specified, dimensions have a tolerance of +0.13 [+.005] and angles have a tolerance of +2_.

FM16W08

Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM23MLD16

Abstract: 3.3v 1Mx8 static ram high speed
Contextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz

FM25V02

Contextual Info: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

AEC-Q100-003

Abstract: FM25W256
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: DS2400 P R ELIM INA R Y DALLAS SEMICONDUCTOR FEATURES DS2400 Silicon Serial Number PIN DESCRIPTION * Unique 48-bit silicon serial number gives 1014 combinations • Factory lasered and tested, no two parts alike OPTIONAL SURFACE MOUNT • 8-bit cyclic redundancy check ensures

HC49U-V

Abstract: clrc632 antenna clrc632 firmware MAX232 smd MFAN700 RC632 CLRD701 USB Interface IC NXP SAB-C161U-LF antenna 13.56MHz clrc632
Contextual Info: CLRM701 Mifare & ICODE contactless reader module Rev. 3.2 — 24 May 2007 Product data sheet 101432 PUBLIC 1. General description This document describes the functionality of the CLRM701 reader module. It includes the functional and electrical specifications and gives the needed details to use this reader

vhdl code for branch metric unit

Abstract: processor control unit vhdl code processor control unit vhdl code download vhdl coding for hamming code branch metric vhdl code 16 bit processor hamming decoder vhdl code 5 to 32 decoder using 3 to 8 decoder vhdl code Radix selection unit radix 2 verilog
Contextual Info: VITERBI_DEC Viterbi Decoder January 10, 2000 Product Specification AllianceCORE Facts CSELT S.p.A Via G. Reiss Romoli, 274 I-10148 Torino, Italy Phone: +39 011 228 7165 Fax: +39 011 228 7003 E-mail: viplibrary@cselt.it URL: www.cselt.it Features • Supports Spartan, Spartan™-II, Virtex™, and

maxwell

Abstract: PT100 thermistor Noalox S17624 BMOD0094 pt100 322 ultracapacitor passive balancing en60751 M8 Lock Washer, Stainless Steel ultracapacitor
Contextual Info: USER MANUAL BOOSTCAP Energy Storage Modules for UPS / Backup & Renewable Energy Applications User Manual for 75V Modules: ƒ BMOD0094 P075 B02 2008 Maxwell Technologies, Inc. 1014204.1 USER MANUAL – BOOSTCAP® ENERGY STORAGE MODULE WARNING DANGER – HIGH VOLTAGE HAZARD!

D815EEA

Abstract: INTEL D815EEA a1037 a10380
Contextual Info: Product Change Notification # 101423-00 Information in this document is provided in connection with Intelâ â products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s