1012 Search Results

L4991

Abstract: RS421A
Contextual Info: www.hamlin.com MISM-3V1 REED SWITCH • • • • • • Features Surface mounting normally open switch Ultra-miniature size with 7.00mm x 1.80 mm 0.276” x 0.071” glass envelope Capable of switching 170Vdc or 0.5A at up to 10W 1012 Ohms insulation resistance

Contextual Info: Ref. #: MS-101212 Last Update: 4/24/08 Dimensions: mm in. 7.80 (.307) .15 (.006) 2.35 (.093) 8.10 (.318) 5 (.20) PCB Layout 2 2 (.079) (.079) 1.90 (.074) COM B A 4.50 (.177) 3-ø1 (ø.039) 2-ø1.20 (ø.472) .15 Max. (.006) 5.80 (.23) 3 (.12) COM .15 (.006)

10350-52a0-008

Abstract: 10320-52A0-008 10326-52A0-008 10150-3000 10350-52F0-008 10336-52A0-008 101XXX 10320-52F0-008 10126-3000VE 10326-52F
Contextual Info: 101XXX Series Solder Wiremount Plugs: Accessories Pincount Plug solder Plastic shielded shell screw Plastic shielded shell (latch) 20 10120-3000 VE 10320-52A0-008 10320-52F0-008 260 10126-3000 VE 10326-52A0-008 10326-52F0-008 36 10136-3000 VE 10336-52A0-008

capacitor siemens 4700 35

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of

TSC 7106 cpl

Abstract: TSC7660 TSC7106 tsc 7106 tsc 7107 cpl ic 7106 cpl 7107A tsc7107 TSC7106A Tsc7107A
Contextual Info: 3bE D TELEDYNE COMPONENTS ÖS17bü2 G0Ü7ÜMM b « T S C -T 5 M O -O S WTELEDYNE COMPONENTS TC7106/7106A TC7107/7107A 3-1/2 DIGIT A/D CONVERTER FEATURES True Polarity Indication for Precision Null Applications Convenient 9 V Battery Operation TC7106A High Impedance CMOS Differential Inputs .1012il

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details 1012X Product Details Sensors & Protective Relays

RZB92DHRN-S378

Contextual Info: 8 7 4 5 3 2 6 .500 .005 2.490 F 1 ITEM NO. QTY. DESCRIPTION DRAWING # REF 1 1 B92HN-A353 10120 2 184 E_B-DHH 10011 .590 F 1.645 1.550 .005 2.400 .005 .050 .070 .050 .075 CARDSLOT .060 E .124 E .124 5.040 .370 1 A .300 INSERTION DEPTH .758 D D A 49 POSITION

Contextual Info: Gigohm Wraparound Surface Mount CHIP RESISTORS FEATURES • R esistan ce values to 1 x 1012£2 • 96% Alumina substrate • Wraparound platinum silver PtAg terminations • HCC-0805-XXXX-X: PtAg term inations with 62/36/2 solder coating for superior solder attachm ent.

AH 222M

Abstract: CFI06B 2A100VDC
Contextual Info: Classification LCDR 1012 V - 01 400 — ► Inductance . stand for 40.0/iH ► Design no. - ► Type . ( V-vertical type, H-horizontal type) - ► Core size -► Product code

JESD22-B106C

Abstract: 1012L MOST25 R015 marking "network interface controller" AFBR-2012S
Contextual Info: AFBR-1012/AFBR-2012 Fiber Optic Transmitter and Receiver for 50 MBaud MOST Data Sheet Description Features AFBR-1012 Transmitter and AFBR-2012 Receiver are designed to transmit/ receive up to 25MBit/s optical data which are biphase coded up to 50Mbaud . Both are

kd 616

Abstract: ana 650 SP10115 SP10116 SP10124 SP1012
Contextual Info: S P 10124 PLESSEY ECL 10,000 SERIES SEMICONDUCTORS 10124 Q U A D T T L T O ECL TRANSLATOR P O S IT IV E LO G IC The 1012 4 is a quad translator fo r interfacing data and control signals between a saturated log ic section and the ECL section o f dig ita l systems. The 10124

AEC-Q100

Abstract: FM25160 FM25C160 FM25C160-S
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

smd code marking PE sot23

Abstract: CDA6C05GTH CDA6C05GTA PE SMD MARKING B72735D0050H062 KKE0053-C-E KKE0058-I-E TPT0892-3-E SMD diode MARKING CODE KB
Contextual Info: CeraDiode SMD type, array, case size 1012 Series/Type: CDA6C05GTH Ordering code: B72735D0050H062 Date: 18.10.2006 Version: 1 Content of inside pages of data sheet. Data will be automatically entered into headers and footers. Please fill in the table and then change the colour to “White”. This ensures that the

Contextual Info: 3 4 A A B C C G F E D C B A D A D V A N C E D MATE POSITION A9 S E E NOT E 13 - A DV A NCE D MATE POSITION A I S E E NOT E 13 10126363-201LF ADVANCED MATE RECEPTACLE ADVANCED MATE POSITIONS ARE POSITIONS A1 AND A9 ONLY FOR ALL DIMENSIONS SEE 10126363-101LF ON SHEET 1

Contextual Info: Signal Conditioning Circuit for Synchronized Crystal Oscillators Ensemble, General Requirements SU-ASCCXX-X Series Data Sheet 1012A Rev. A U.S. Patent Number 7,812,682 Description The Signal Conditioning Circuit SCC is intended for use in the system, which requires

resistor qbk

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11

FM24C04A

Abstract: FM24C04A-S FM24C64
Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM25160

Abstract: FM25C160 FM25C160-P FM25C160-S MS-001
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

mbm27c1000a

Abstract: MBM27C512-20 str w 6554 df rr 3pin transistor MB89920 abcc MB89923 MB89925 MB89P928 MB89PV920
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-10127-1E F2MC-8L FAMILY MICROCONTROLLERS MB89920 SERIES HARDWARE MANUAL 1. The products described in this manual and the specifications thereof may be changed without prior notice. To obtain up-to-date information and/or specifications, contact your Fujitsu sales

Deif control

Abstract: bsk 45 c9ab CHARACTERISTICS OF IC 7812 MBM27C1001A MB89680 MB89689 MB89P689 MB89PV680 MB89W689
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-10129-1E F2MC-8L 8-BIT MICROCONTROLLER MB89680 SERIES HARDWARE MANUAL 1. The products described in this manual and the specifications thereof may be changed without prior notice. To obtain up-to-date information and/or specifications, contact your Fujitsu sales

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

RIC1147

Contextual Info: Preliminary FM25LX64 64Kb Serial 1.5V F-RAM Memory FEATURES 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 Year Data Retention at +75ºC  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

PC MOTHERBOARD CIRCUIT diagram of LG computers

Abstract: AD585 AIP-24 H300 H301 H302 lm35 to 1-5 volts
Contextual Info: AIP-24 24 Channel Analogue Input Board User Manual AIP-24 User Manual Document Part N° Document Reference Document Issue Level 0127-1012 0127-1012.Doc 1.2 Manual covers PCBs identified AIP-24 Rev F All rights reserved. No part of this publication may be reproduced, stored in any retrieval system, or

LDT-C512RI

Contextual Info: UNCONTROLLED DOCUMENT E0.315Ü r PIN 15 1 9 .0 0 [0 .7 4 8 : 1 5 ,2 4 4,50±0,75 E0.177±0.030] [1 .4 8 8 ] 00.50 [0.020] 2 .5 4 3 3 .0 2 [0 .1 0 0 ] J LDT-C512RI D E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10129. E.C.N. #10164. REDRAWN. E.C.N. # 1 OBRDR.