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    100V SINGLE P-CHANNEL MOSFET Search Results

    100V SINGLE P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TK5R1A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet

    100V SINGLE P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-254AA Package

    Abstract: FSF9150R4
    Contextual Info: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		FSF9150R4 JANSR2N7403 -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; TO-254AA Package FSF9150R4 PDF

    Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH12P10ESY3 O-257AA 100kRad 34Mev/cm O-257AA PDF

    Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA PDF

    Contextual Info: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		IRFD9120 -100V, -100V TA17501. TB334 PDF

    irf9520 p channel

    Abstract: IRF9520
    Contextual Info: IRF9520 Data Sheet July 1999 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET • 6A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


    Original     		IRF9520 TA17501. O-220AB irf9520 p channel IRF9520 PDF

    IRFF9120

    Contextual Info: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.


    Original     		IRFF9120 TA17501. IRFF9120 PDF

    STRH12P10ESY1

    Abstract: STRH12P10ESY3
    Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		STRH12P10ESY3 O-257AA 100kRad 34Mev/cm STRH12P10ESY1 STRH12P10ESY3 PDF

    Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■


    Original     		STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA PDF

    STRH40P10FSY3

    Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA


    Original     		STRH40P10FSY3 O-254AA 100kRad 34Mev/cm STRH40P10FSY3 PDF

    Contextual Info: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		FSL9110D, FSL9110R -100V, 36MeV/mg/cm2 1-800-4-HARRIS PDF

    sem 2105

    Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
    Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		JANSR2N7411 FSL9110R4 -100V, sem 2105 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106 PDF

    Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		JANSR2N7411 FSL9110R4 -100V, PDF

    5a 12v regula

    Contextual Info: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		FSL9130D, FSL9130R -100V, MIL-S-19500, MIL-STD-750, 100ms; 500ms; 5a 12v regula PDF

    2E12

    Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
    Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9130D, FSL9130R -100V, 2E12 FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1 PDF

    FSF9150R4

    Abstract: 2E12 JANSR2N7403
    Contextual Info: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		JANSR2N7403 FSF9150R4 -100V, FSF9150R4 2E12 JANSR2N7403 PDF

    2E12

    Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
    Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSJ9160D, FSJ9160R -100V, 2E12 FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET PDF

    2E12

    Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
    Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9130D, FSL9130R -100V, O-205AF 254mm) FSL9130R 2E12 FSL9130D FSL9130D1 FSL9130D3 FSL9130R1 PDF

    2E12

    Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
    Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSF9150D, FSF9150R -100V, 2E12 FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1 PDF

    2E12

    Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
    Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSF9150D, FSF9150R -100V, 2E12 FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1 PDF

    ic 4082 data sheet

    Abstract: 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1
    Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSS9130D, FSS9130R -100V, ic 4082 data sheet 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1 PDF

    2E12

    Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
    Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSJ9160D, FSJ9160R -100V, 2E12 FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 PDF

    Contextual Info: Ordering number : EN*A2321 CPH3362 Advance Information http://onsemi.com P-Channel Power MOSFET -100V, -0.7A, 1.7Ω, Single CPH3 Features • On-resistance RDS on 1=1.3Ω(typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C


    Original     		A2321 CPH3362 -100V, 900mm2Ã A2321-5/5 PDF

    Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA


    Original     		STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm O-254AA PDF

    STRH40P10FSY3

    Abstract: JESD97 STRH40P10FSY1
    Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA


    Original     		STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm STRH40P10FSY3 JESD97 STRH40P10FSY1 PDF