FSS9130R1 Search Results

FSS9130R1 Datasheets (2)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSS9130R1		Fairchild Semiconductor	6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET	Original	PDF	118.02KB	9
FSS9130R1		Intersil	6A, -100V, 0.660 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs	Original	PDF	45.82KB	8

FSS9130R1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	fss9130d fss9130r -100v mil-std-750 +3mil-s-19500 100ms 500ms	PDF
Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, r[js ON = 0.660£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	fss9130d fss9130r -100v mil-s-19500	PDF
2E12 Abstract: FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1 Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	fss9130d fss9130r -100v 2e12 +3fss9130d1 fss9130d3 fss9130r1	PDF
Rad Hard in Fairchild for MOSFET Abstract: 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1 Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	fss9130d fss9130r -100v rad hard in fairchild for mosfet +42e12 fss9130d1 fss9130d3 fss9130r1	PDF
ic 4082 data sheet Abstract: 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1 Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	fss9130d fss9130r -100v ic 4082 data sheet +42e12 fss9130d1 fss9130d3 fss9130r1	PDF