100V 8A N-CHANNEL MOSFET Search Results

2E12

Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

2n6796

Abstract: MOSFET
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications

IRF521

Abstract: IRF520 irf523 F521 irf522
Contextual Info: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: CEHAE«» JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDs ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IRF5201

Abstract: IRF520 IRF521 IRF522 IRF523 TB334 irf520 mosfet MOSFET IRF520 IRF5213 IRF-520
Contextual Info: IRF520, IRF521, IRF522, IRF523 S E M I C O N D U C T O R 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8A, 100V • rDS ON = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: FRL130D FRL130H FRL130R
Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRL130D FRL130H FRL130R Rad Hard in Fairchild for MOSFET FRL130
Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: JSJ H A R R IS UU S E M I C O N D U C T O R FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

pj 939 diode

Abstract: Rad hard MOSFETS in Harris
Contextual Info: FRL130D, FRL130R, FRL130H Semiconductor 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180£i TO-205AF • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: FSL130R4 JANSR2N7395
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor