100NADC Search Results

T2T TRANSISTOR

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is

Contextual Info: MOTOROLA Order this document by MPS6714/D SEMICONDUCTOR TECHNICAL DATA One W att Amplifier Transistors NPN Silicon MPS6714 MPS6715 COLLECTOR 3 2 base ' 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector-Em itter Voltage Value Unit Vdc v CEO MPS6714 MPS6715

OC59

Contextual Info: MOTOROLA Order this document by BCP56T1/D SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E p itaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB

MPS3640

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor PNP Silicon M PS3640 C O L LE C T O R 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage Symbol Value Vdc Unit VCEO -1 2 C o lle c to r-B a s e Voltage VCBO -1 2 Vdc Em itte r-B a se Voltage

motorola an569 thermal

Abstract: 2N5087 motorola an569
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Tran sistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 50 Vdc C ollector-B ase Voltage VCBO 50 Vdc Vdc E m itter-B ase Voltage

MMBD914LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 O CATHODE H O 1 ANODE Ah 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 100 Vdc Forward Current if 200 mAdc iFM surge 500 mAdc Symbol Max

Contextual Info: @ ,OPTEK Product Bulletin OP602TX/V February 1993 Hi-Reliability NPN Silicon Phototransistors Types OP602TX/V, OP603TX/V, OP604TX/V DIMENSIONS «HE IN INCHES [MILLIMETERS!. Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • Processed to Optek's military

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor NPN Silicon MPSA27 COLLECTOR 3 EMITTER 1 M AXIM UM RATINGS Rating Symbol MPSA27 Unit Colleotor-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage vebo 10 Vdc Collector Current — Continuous >C 500

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the S O T -223 package which is designed for

2N1711

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Devices 2N1711 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation ia> TA = +25°C (1)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T M O S FET T ransistor N-Channel — Enhancement V N 2222LL 3 DRAIN Motorola Preformi Devlc« 1 SOURCE M A X IM U M R A T IN G S Rating Symbol Valua Unit Voss 60 Vdo vdgr 60 Vdc VGS ±20 ±40 Vdo Vpk Draln-Source Voltage

mpsa77

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors P N P Silicon COLLECTOR 3 EMITTER 1 M A X IM U M R A T IN G S Rating Symbol MPSA75 MPSA77 Unit Collector-Emitter Voltage VCES -4 0 -60 Vdc Emitter-Base Voltage v EBO -10 Vdc 'C -500 Ade Pd 625 5.0

transistor tt 2170

Abstract: motorola marking CA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon E pitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for

2N5401

Abstract: 2N5400 2N5401 MOTOROLA 2N5401 L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon •Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIM UM RATINGS Symbol 2N5400 2N5401 Unit C ollector-E m itter Voltage VCEO 120 150 Vdc C ollector-B ase Voltage VCBO

Contextual Info: M O TO RO LA SC X ST RS /R F 4bE D H fc,3b?254 O Q T E b M S 3 • M 0 T b 7 ^ t e - 2 S MOTOROLA SEMICONDUCTOR ■h h h h h h h h h h h h h h TECHNICAL DATA BHO PRELIMINARY DATA /////// MMCM3799HXV/HS (SINGLE) MD3799FHXV/HS (DUAL) MQ3799HXV/HS (QUAD) Discrete

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors NPN Silicon M PS6714 M PS6715 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol C ollector-E m itter Voltage Value Unit Vdc VCEO MPS6714 MPS6715 C o llecto r- Base Voltage 30 40 E m itte r-B a se Voltage

2663 transistor

Abstract: mpsa70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon MPSA70 COLLECTOR 3 1 EMITTER CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ T/\ = 25°C

SD6150

Contextual Info: WOTOiROiLA Order this document * m sm sSd SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode MSD6150 3 Anode Cathode 1 2 Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Reverse Voltage Total Device Dissipation @ Ta = 25°C Derate above 25°C Operating and Storage Junction

sot-223 body marking D K Q F

Contextual Info: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the

MMBTA42

Contextual Info: 1M IM B T A 42 High-Voltage NPN Transistor Surface M ount M a x i m u m R a tin g s _K a t in g S> m im i Collector-Emitter Voltage" Collector-Base Voltage Emitter-Base VOitage Collector Current-Continuous Value 300 300 50 500 VCEO 'CBO

ic an 6651

Abstract: MPS6652 MPS6601 MPS6602 MPS6651
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN MPS6601 M PS6602* PNP MPS6651 MPS6652* COLLECTOR 3 2 BASE PNP NPN 1 EMITTER EMITTER Voltage and current are negative for PNP transistors M AXIMUM RATINGS Symbol Rating C ollector-Em itter Voltage

Contextual Info: duatoi tPioaucti, One. %E1t.su fELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA General Purpose Transistor NPN Silicon MPS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage Rating

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MPS6507 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc