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100N5 Datasheets (1)

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Anaren

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
100N50TW		Anaren	RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM	Original	PDF	230.69KB

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Shenzhen Sunway Communication Co Ltd MH0402A105M100N5RNZA MLCC, 1 uF 20% 10V X5R 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MH0402A105M100N5RNZA	Tape & Reel	50,000		1	1 $0.10 10 $0.03 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
Shenzhen Sunway Communication Co Ltd MH0402A475K100N5RCZA MLCC, 4.7 uF 10% 10V X5R 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MH0402A475K100N5RCZA	Tape & Reel	50,000		1	1 $0.20 10 $0.10 100 $0.05 1000 $0.02 10000 $0.02	Buy Now
Shenzhen Sunway Communication Co Ltd MH0402A105K100N5RNZA MLCC, 1 uF 10% 10V X5R 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MH0402A105K100N5RNZA	Tape & Reel	50,000		1	1 $0.10 10 $0.03 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
Shenzhen Sunway Communication Co Ltd MH0402A475M100N5RCZA MLCC, 4.7 uF 20% 10V X5R 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MH0402A475M100N5RCZA	Tape & Reel	50,000		1	1 $0.20 10 $0.10 100 $0.05 1000 $0.02 10000 $0.02	Buy Now
TTM Technologies J100N50X4B RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	J100N50X4B	Tray	2,148		1	1 $8.16 10 $7.08 100 $6.18 1000 $5.45 10000 $5.45	Buy Now
Mouser Electronics	J100N50X4B		559			1 $8.16 10 $7.08 100 $6.19 1000 $5.45 10000 $5.45	Buy Now
Avnet Asia	J100N50X4B			8 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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100N5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Model 100N50TW Flanged Termination 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting Flange Lead s : Features: • DC – 5.0 GHz • 100 Watts • AlN Ceramic • Non-Nichrome Resistive Element • Low VSWR Thick film Aluminum Nitride ceramic	Original	100N50TW QQ-N-290 MIL-E-5400.	PDF
100N50P Abstract: mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30	Original	100N50P 100N50P mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250	PDF
Contextual Info: Model RFP-100N50TW RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting flange Leads Features: • DC – 5.0 GHz • 100 Watts • Aluminum Nitride Ceramic • Non-Nichrome Resistive Element • Welded Silver Leads	Original	RFP-100N50TW QQ-N-290 MIL-E-5400. 100N50TW	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS	Original	100N50P PLUS264TM	PDF
100N50P Abstract: 100n50 S20NF Contextual Info: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C	Original	100N50P ISOPLUS264TM ISOPLUS264 100N50P 100n50 S20NF	PDF
RFP-100N50TW Contextual Info: RFP-100N50TW Aluminum Nitride Termination VER3/14/01 Description: RFP-100N50TW Features: o 1kHz – 5.0 GHz o 100 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-100N50TW is a general purpose 100 Watt	Original	RFP-100N50TW VER3/14/01 RFP-100N50TW 700oF)	PDF
IXFN 100N50P Abstract: 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30	Original	100N50P IXFN 100N50P 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	100N50P	PDF
100N50P Abstract: 100n50 Contextual Info: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	100N50P ISOPLUS264TM 100N50P 100n50	PDF
100N50 Abstract: RFP-100N50TW RFP100N50 SN63 Contextual Info: 100 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk Lead(s): Features • DC – 5.0 GHz Electrical Specifications	Original	QQ-N-290 RFP-100N50TW 100N50 RFP-100N50TW RFP100N50 SN63	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
MB81C68 Abstract: TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl Contextual Info: MEMORY PRODUCTS DATABOOK 1st EDITION JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON	Original	Z8000 MB81C68 TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl	PDF
3 phase inverter 120 conduction mode waveform Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter Contextual Info: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed	OCR Scan	AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter	PDF