100JIS Search Results

AD7582BD

Abstract: AD7582TD AD7582 AD7582KN AD7582KP C004 diode TI33 74HC77
Contextual Info: A N ALO G CMOS 12-Bit D E V I C E S _ Successive Approximation ADC AD7582 FEATURES 12-Bit Successive Approximation ADC Four High Impedance Input Channels Analog Input Voltage Range of 0 to + 5 V with Positive Reference of + 5V Conversion Time of 100jis per Channel

od43l

Abstract: OLD222 OCS32 LED 850nm TO-18 ocm220
Contextual Info: Tstg : -5 5 ~ +125°C Metal can Topr :-4 0 - +125°C (Metal can) 1FM'’ (tw =100jis) 1FH'Z (tw -2 0 0 ms) 1fm':! (tw -150ns) -3 0 ~+100°C (Others) -3 0 ~ +100°C (Others) (T-10m s) Absolute Maximum Ratings (Tas25°C) R a d ia tio n Color Package P Vr IF

Contextual Info: GEC P L E S S E Y Si j a n u a r y i 996 SEMI CO NDUC TOR S DS4275-2.1 TF707.L FAST SWITCHING THYRISTOR KEY PARAMETERS V DRM 2500V 600A ^T RMS 9000A ^TSM 300V/11S dV/dt dl/dt 500A/|1S 100jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■

Contextual Info: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­

Contextual Info: Tem ic TSUS540. S e m i c o n d u c t o r s GaAs Infrared Emitting Diodes in 0 5 mm T-13A Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally

ss 7941

Abstract: TSHA4400
Contextual Info: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.

Signetics 27c64

Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Contextual Info: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read

Contextual Info: B U R R -B R O W N I B B INA116 I Ultra Low Input Bias Current INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • LOW INPUT BIAS CURRENT: 3fA typ The ENA116 is a complete monolithic FET-input instru­ mentation amplifier with extremely low input bias cur­

374C

Contextual Info: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: B U R R -BR O W N DRV101 T « nœ PWM SOLENOID/VALVE DRIVER FEATURES DESCRIPTION • HIGH OUTPUT DRIVE: 2.3A The DRV101 is a low-side power switch employing a pulse-width modulated PWM output. Its nigged de­ sign is optimized for driving electromechanical de­

diode chn 940

Abstract: chn 940 CT-98
Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6200 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs

Contextual Info: IBM0317329N IBM0317329P Advance 512K x 32 Synchronous Graphics RAM Features • Single 3.3V + 0.3 • Fully synchronous; all signals registered on pos­ itive edge ot system clock • 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address

A6070M

Abstract: 780sa 7805A PI 81V17805 81v17805a
Contextual Info: P R E L IM IN A R Y - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V 1 7 8 0 5 A -6 0 /7 0 /6 0 L /7 0 L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,1 52x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains

fujitsu ten ECU

Abstract: MB811
Contextual Info: PRELIMINARY - - Fujrrsu October 1995 Edition 1.1 PRODUCT PROFILE SHEET M B 8116165A - 60/-70 CMOS 1M X 16BIT HYPER PAGE MODE DYNAMIC RAM C M O S 1,048,576 x 16BIT Hyper Page M ode D yn a m ic RAM T h e F u jitsu M B 8 1 1 6 1 6 5 A is a fu lly d e c o d e d C M O S D y n a m ic R A M D R A M th a t co n ta in s

Contextual Info: IVC102 B U R R -B R O W N I 1 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION • PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for

PAC PIN DIAGRAM

Contextual Info: BURR-BROWN E ADS803 1 DEMO BOARD A VAILABLE 12-Bit, 5MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES • FLEXIBLE INPUT RANGE • OVER-RANGE INDICATOR • HIGH SFDR: 82dB at NYQUIST • HIGH SNR: 69dB • LOW POWER: 116mW APPLICATIONS • SMALL 28-LEAD SSOP AND SOIC PACKAGES

Contextual Info: X = 7 SGS-THOMSON ^ 7 # IfflDSIiOllLIÊÎI^OliülIGS S 4 0 xxxH SCR FEATURES • It r m s = 40A . V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S40xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

Contextual Info: MâïSUMÎ Protection of Lithium-Ion Batteries MM1421 Monolithic IC MM1421 This IC is used to protect single-cell lithium-ion batteries. It adopts an ultra-compact package and has the functions of previous models, with functions for overcharge detection, overdischarge detection and

Contextual Info: D P V 128X 16A H IG H S PEED 1 2 8 K X 16 U V E P R O M P G A M O D U L E PRELIM IN ARY D ESCRIPTIO N: The DPV128X16A is a 40-pin Pin Grid Array PG A consisting of two 128K X 8 U V EP R O M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

Contextual Info: MP8775 CMOS 20 MSPS, 8-Bit, High Speed Analog-to-Digital Converter FEATURES • 8- Bi t Resol ut i o n • P o w e r D o w n Availabl e: • 20 M H z S a m p l i n g Ra t e • 3 V Versi on: • D NL = +1/ 2 LSB, INL = +1 LSB typ • S mal l 20 Pin S O I C P a c k a g e

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q

Contextual Info: 19-0123; Rev. 1; 8/93 A ly lX IV M Low-Power, 8-Channel, S erial 12-Bit ADCs Description The 4-wlre serial interface directly connects to SPI , QSPI™ and Microwire™ devices without external logic. A serial strobe output allows direct connection to TMS320

74ABT16373B

Abstract: 74ABTH16373B
Contextual Info: Philips Semiconductors Product specification 16-bit transparent latch 3-State K v 1 74ABT16373B 74ABTH16373B When nOE is Low, the latched or transparent data appears at the outputs. When nOE is High, the outputs are in the High-impedance “OFF” state, which means they will neither drive nor load the bus.

free of intel 8061 microcontroller

Abstract: 8061 instruction set intel 8061 "SMD Code" 87C51FC GQCC1-J44 8061 intel 5962-9169701 smdcode rd 80C51
Contextual Info: Product Specification Philips Semiconductors Military Microcontroller Products CMOS single-chip 8-bit microcontrollers 87C51FC/87C51FC-16 four-priority-leve!, nested interrupt structure, an enhanced UART and on-chip oscillator and timing circuits. For systems that require