100HH Search Results

l 101c 681

Abstract: pj 986 iv PJ 986 pj 979 code
Contextual Info: m e ki con. ALUMINUM ELECTROLYTIC CAPACITORS PF Low Im pedance, High R eliability Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C series • Low impedance and high reliability withstanding 5000 hour load life at + 1 0 5 t: 3000/2000 hours

Contextual Info: □ IXYS Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS V CES ^C25 V CE sat Short Circuit SOA Capability = 600 V = 75 A = 2.5 V ?c G TO-247 SMD (\Y m A Maximum Ratings Sym bol Test C onditions VCES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i

FD9515

Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Contextual Info: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International

ACM4532

Abstract: ECJ-3YB1C105K LM48410 LM48410SQ TPSB106K016R0800 TDK common mode choke notes 24v Audio amplifier class AB
Contextual Info: LM48410 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with National 3D Enhancement General Description Key Specifications The LM48410 is a single supply, high efficiency, 2.3W/channel, filterless switching audio amplifier. A low noise PWM

Contextual Info: EM73866 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73866 is an advanced single chip CMOS 4-bit micro-controller. It contains 8K-byte ROM, 500-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/counters for the kernel function.

LM48410

Contextual Info: LM48410 www.ti.com LM48410 SNAS403E – FEBRUARY 2007 – REVISED MAY 2013 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with 3D Enhancement Check for Samples: LM48410 FEATURES DESCRIPTION • The LM48410 is a single supply, high efficiency,

Contextual Info: LM48410 www.ti.com LM48410 SNAS403D – FEBRUARY 2007 – REVISED JULY 2008 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with 3D Enhancement Check for Samples: LM48410 FEATURES DESCRIPTION • The LM48410 is a single supply, high efficiency,

TLCS-900

Abstract: TMP96C041B TMP96C041BF TMP96C141BF
Contextual Info: TOSHIBA JÜ S t U C M O S 16 t: 7 h 7 < i Q 3 > h P - 7 T L C S - 9 0 0 v ' J - x TMP96C041B tt £ < 7 j£ ß # * ± 1 6 t i y h V < ? □ = ! > id h □ — "7 TLCS-900 v U — X N TM P96C 041B# U if £ Ò ^ s * l s i £ ¿ r 'f ijf f l z 4 '^ > t íT (is

TMP95C061B

Abstract: TMP95C061BF uips 16y p54
Contextual Info: TOSHIBA JÜ S t U C M O S 16 t: 7 h 7 < i Q 3 > h P - 7 T LC S- 9 0 0 /H v ' J - x TMP95C061B t t i; » £ < 7 j£ ß # * ± 1 6 ti y * l s £ i h v < ^ p = l> £ id hP-^TLC S-900/H vU -Xs { & m ± D :, ì m , r TM P95C 061B# j ¿ usto f c — 6 (D )S f ê L f f lf à } â , Ü # II

XF-TRC1102NLE

Abstract: ecs motherboard AKUE 130uH 30MHZ 80MHZ XF-TRC1102NL
Contextual Info: M e c h a n ica I; - \2 JO-m. t Iññññ ñññ 1 XMULTIPLE *ir « I 1 j XF-TRC1102NLE • 1 jyyyyyyy — -lU—0.4Í i 3EV. BCT Jfl A BHJ. D 6 S C *[rT ]O f AFPD W IZ ^ O U -B. 89- £ DATE 1— 3.2? £ * L '—û.fri SUGGESTED PTB LATfDUTiTW V ffif

zf 9050

Abstract: micro controller EM73P461A 8749 MICROCONTROLLER HTC lCD DISPLAY Em73p461
Contextual Info: EM73P461A 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT inary Prelim GENERAL DESCRIPTION EM73P461A is an advanced single chip CMOS 4-bit one-time programming OTP micro-controller. It contains 4K/8K-byte ROM, 244-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/

display 7 segmento sm 4105

Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
Contextual Info: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)

diode lt 429

Abstract: 7V03 lts 542
Contextual Info: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A

D-6840

Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
Contextual Info: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •

Contextual Info: r n THS BHMMN6 6 UNPUBUSHEK- 1— W LEAStt PM PUBLICATION— COPYWOHT - BY TYCO OECTROMCS CORPORATION. osr REVISIONS AA 22 * “ • W CHIS RE8BW B>- -OBCftlP TION 06JAN2009 REV PER E C O -0 9 —001491

Contextual Info: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES

BC445

Abstract: BC446 TRANSISTOR C 460
Contextual Info: SILICON EPITAXIAL TRANSISTOR «TÖ3»- DESCRIPTION BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers._

MOSFET R3D

Abstract: ACM4532 ECJ-3YB1C105K LM48410 LM48410SQ TPSB106K016R0800
Contextual Info: LM48410 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with National 3D Enhancement General Description Key Specifications The LM48410 is a single supply, high efficiency, 2.3W/channel, filterless switching audio amplifier. A low noise PWM

45N120 ixys

Abstract: ON601
Contextual Info: mxYS IXSH 45N120 High Voltage, VCES I L O W V CE sa. I G B T C25 v CE(sat) 1200 V 75 A 3V Short Circuit SOA Capability Symbol Test Conditions v CES v CGR Tj =25°Cto 150°C 1200 Tj = 25° C to 150° C; RGE= 1 M£2 1200 Maximum Ratings V V v GES v GEM Continuous

4588d

Abstract: C8750 2814H
Contextual Info: □IXYS IGBT with Diode IXSN 52N60AU1 Short Circuit S O A Capability E é Test Conditions VCES Tj =25°C to150°C 600 V vCGR vGES T.J = 25° C to 150° C;’ RrP = 1 MQ BE 600 A Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc =25°C 80 A Tc =90°C 40 A 160

IXGH40N30

Abstract: high current igbt
Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient

32N60BU1

Abstract: 32N60B
Contextual Info: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C

EM73866

Abstract: htc display 40 pin HTC lCD DISPLAY
Contextual Info: EM73866 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73866 is an advanced single chip CMOS 4-bit micro-controller. It contains 8K-byte ROM, 500-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/counters for the kernel function.

Contextual Info: b7 pTI^dttesd QOOTBSB T TOSHIBA {DISCRETE/OPTOï 9097250 TOSHIBA D I S C R E T E /OPTO 67C 0 9 3 5 3 D r - o 7 ~t'jr 1SV99 Silicon EpitaxiaJ ;Pin Type Diode Weight : 0.2g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION