100B102KW Search Results

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

TB223

Abstract: amidon BN-61-202
Contextual Info: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A

bc857b nxp

Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
Contextual Info: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from

Contextual Info: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from

100B102KW

Abstract: AN11130 66-0304-00004-000 600F0R 96798
Contextual Info: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from

TB217

Abstract: PORCELAIN
Contextual Info: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W

Contextual Info: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.