1000MW Search Results

Contextual Info: SONY SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 x 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.

b044-1204-01x-z

Contextual Info: ELECTRICAL: CURRENT RATING: 1A CURRENT VOLTAGE: 250VAC RMS CONTACT RESISTANCE: < 30mW AT 1AMP DC INSULATOR RESISTANCE: > 1000MW AT 500VDC DIELECTRIC WITHSTANDING VOLTAGE: 500VAC FOR 1 Min. OPERATING TEMPERATURE: -55° C TO +105° C CAPCITANCE: 2pF Max. MECHANICAL:

zener SOD-123 1A

Abstract: zener zd 31 ZGFM103V6B-M z7 SOD-123 ZGFM1022B-M ZGFM1027B-M
Contextual Info: WILLAS ZGFM103V3B-M THRU 1000mW Surface Mount Zener Diodes-3.3V-100V ZGFM10100B-M SOD-123-L PACKAGE Pac k ag e o u t l i n e Feat u r es SOD-123-L • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

dtz tt11

Abstract: TT11 smd zener code FTZ56E TT12 UMZ12N
Contextual Info: RDNrn Zener Diodes S M •L in e Up Maximum power dissipation Pd is 200mw to 1000mw (IW ) . Selection among these series with various packages assures to match specific application and requirement. Mm wan Series DTZ Series PTZ Series RLZ Series RLZ J Series

15955

Contextual Info: Zener Diodes S M •L in e Up Maximum power dissipation Pd is 200mw to 1000mw (IW) to match specific application and requirement. Series Package P (m W ) DSM PSM LL-34 LL-34 LL-34 SSD UMD UMD UMD SMD FMD DTZ Series RI.Z Seríes H Z J Series RIJZ5000 Series

diode block 805

Abstract: C6802 IEC60825-1 SLD304B 15c diode
Contextual Info: SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.

Contextual Info: SONY SLD304XT 1000mW High Power Laser Diode Description The SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature.

Contextual Info: GLP-III-532 300-1000mW Portable Green DPSS Laser System Portable 532nm DPSS Laser System for professional application, featuring 4-way safety system, catch button for convenient operation, and LED status indicator. 4-way safety system: 1. 2. 3. 4. slideable front cover

RLTMIL_1342_1-1000MW

Contextual Info: 16.08.2010 rltmil_1342_1-1000mw.doc 1 of 2 16.08.2010 rltmil_1342_1-1000mw.doc 2 of 2

SLD304B

Abstract: SLD304
Contextual Info: SLD304B SONY Block-type 1000mW High Power Laser Diode D escriptio n SLD304B is a high power laser diode m ounted on a 3 x 3 x 5 m m Copper block. It is ideal fo r applications which require a minimal distance between the laser facet and external optical parts.

voltage regulator -zener

Abstract: AZD27C21
Contextual Info: AZD27C21 VOLTAGE REGULATOR ZENER DIODES VOLTAGE 21 Volts 1 Watt POWER • Sillicon Planar Zener Diode • 1000mW Power Dissipation 0.115 2.90 0.106(2.70) • Zener and surge current specification 0.044(1.10) 0.031(0.80) 0.075(1.90) 0.067(1.70) FEATURES • Low leakage current

Contextual Info: SPECIFICATIONS FUTURE BUS CONNECTOR 1F Series Rec. Solder Type 2.0mm Pitch 5 Rows Mechanical Contact Retention Force: 0.50Kg min. Electrical Voltage Rating: 750V Current Rating: 1A Contact Resistance: 55mW max. Dielectrical Withstanding Voltage: 1000V Insulation Resistance: 1000MW min.

10P10

Abstract: FOXCONN PACKAGE
Contextual Info: SPECIFICATIONS Contact Retention Force: 0.21Kg 0.44Lb min. Durability: 100 Cycles Voltage Raging: 120VAC Current Rating: 0.5A Contact Resistance: 30mW max. Dielectrical Withstanding Voltage: 300VAC Insulation Resistance: 1000MW min. Housing: LCP, UL 94-0, Ivory White

SLD304XT

Abstract: C6802 LD chip laser 790 nm
Contextual Info: SLD304XT 1000mW高出力レーザダイオード 概 要 SLD304XTは，熱設計と電気設計を独立に行う事が 可能です。 TE（Thermo Electric）クーラーを内蔵しております。 M-273 特 長 • 高出力 推奨光出力 Po＝900mW

mmccard

Contextual Info: FLS Series Specifications Insulation Resistance: Withstanding Voltage: Contact Resistance: Voltage Rating: Current Rating: Operating Temp. Range: Coplanarity: Mating Cycles: MMC-Card Reader Push/Push Ejection 1000MW min. at 500V DC 500V AC for 1 minute 40mW max. at 1mA / 20mV max.

SMB735R-1100

Contextual Info: epitex Opto-Device & Custom LED High Power Top LED SMB735R-1100 Lead Pb Free Product – RoHS Compliant SMB735R-1100 High Power Top LED SMB735R-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package and molded with epoxy resin. These devices are available to be operated and 1000mW at IFP=4A.

2TX650

Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
Contextual Info: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.

10VDC

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1000mWatts of Power Dissipation Electrical Characteristics @ 25°C Unless Otherwise Specified

zener diode marking c21

Contextual Info: AZD27C21 VOLTAGE REGULATOR ZENER DIODES VOLTAGE 21 Volts 1 Watt POWER • Sillicon Planar Zener Diode • 1000mW Power Dissipation 0.115 2.90 0.106(2.70) • Zener and surge current specification 0.044(1.10) 0.031(0.80) 0.075(1.90) 0.067(1.70) FEATURES • Low leakage current

RLTMRL_660_100-1000MW

Contextual Info: RLTMRL-660 / 100-1000mW RED DIODE LASER At 660nm Diode red laser 660nm is made features of ultra compact, long lifetime, low cost and easy to operate, which is widely used in measure, spectrum analyzing, laser light show, etc. Specifications: Wavelength nm

GREENCONN

Abstract: A003
Contextual Info: REV. LOCAS. 01 NEW .Ifi 7Q+Í1.1Í DESCRIPTION INITIAL RELEASE. F DATE 2008.8.20 DRAWN F Specifications Current Rating: 1Amp Insulation Resistance: 1000MW Min. Dielectric Withstanding: 300V AC Contact Resistance: 20mW Max. Operating Temperature:-40'C to +105'C

2759

Abstract: 1 bit sram 16K RAM ECL-10K ecl 10K sram 16 bit
Contextual Info: PRELIMINARY IDT10480 IDT100480 IDT101480 HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM  Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns • Low power dissipation: 1000mW (typ.)

Termistor

Abstract: 2 Wavelength Laser Diode termistor 104 1000mW laser 1w infrared led chip thermistor medical device high power laser laser diode 780 nm SLD304XT SLD304XT-1
Contextual Info: SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE Thermo Electric cooler. Equivalent Circuit Features • High power Recommended optical power output Po = 900mW

ZS140

Abstract: ZS170
Contextual Info: Formosa MS Chip Zener Diodes ZS110 THRU ZS330 Surface mount Zener type SMA Features 1000mWatt Power Dissipation 0.189 4.8 0.165(4.2) 0.012(0.3) Typ. High Voltages from 110V ~ 330V 0.106(2.7) 0.091(2.3) Designed for mounting on small surface Extremely thin/leadless package