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    1000 WATTS POWER AMP Search Results

    1000 WATTS POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    1000 WATTS POWER AMP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts LD0810-50 LD0810-50 Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V Features • • • • • • • Outline Drawing New LDMOS Technology Broadband Class AB Operation


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    LD0810-50 -30dBc PDF

    97942

    Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
    Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10AM20 10AM20 Temperatures13 97942 74929 Transistor 5503 231369 TRansistor A 940 273157 PDF

    C 33725

    Abstract: 4501 ic 6483 10A015 080620 144089 040196 BVces 33970 34-41-50
    Contextual Info: 10A015 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10A015 10A015 C 33725 4501 ic 6483 080620 144089 040196 BVces 33970 34-41-50 PDF

    10AM12

    Abstract: COB1
    Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10AM12 10AM12 150oC 200output COB1 PDF

    10A060

    Abstract: 20989 78561 MAG 1832 55FT
    Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10A060 10A060 20989 78561 MAG 1832 55FT PDF

    ic 74682

    Abstract: 160852 085016 74682 8813 40507 10AM05 44050-7 172113 E+170968
    Contextual Info: 10AM05 5.0 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10AM05 10AM05 ic 74682 160852 085016 74682 8813 40507 44050-7 172113 E+170968 PDF

    IC 7476

    Abstract: IC 7476 datasheet 7476 IC datasheet data sheet IC 7476 data sheet of ic 7476 ic 7476 data sheet ic 7840 7476 data sheet 10A030 58167
    Contextual Info: 10A030 3 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A030 is a COMMON EMITTER transistor capable of providing 3 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10A030 10A030 IC 7476 IC 7476 datasheet 7476 IC datasheet data sheet IC 7476 data sheet of ic 7476 ic 7476 data sheet ic 7840 7476 data sheet 58167 PDF

    0405-1000M

    Abstract: J307
    Contextual Info: 0405-1000M Rev C . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull


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    0405-1000M 0405-1000M 25oC1 J307 PDF

    40X40

    Abstract: P6KE440CA
    Contextual Info: P6KE6.8 THRU RECTIFIER SPECIALISTS P6KE440CA TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE RANGE - 6.8 to 440 Volts PEAK PULSE POWER - 600 Watts FEATURES * Glass passivated junction * 600 Watts Peak Pulse Power capability on 10/1000 µs waveform


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    P6KE440CA DO-15 MIL-STD-202E, P6KE440CA) 40X40 P6KE440CA PDF

    acrian RF POWER TRANSISTOR

    Abstract: Acrian s 46120 BVces Scans-00115701
    Contextual Info: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    0Dpi53i 100mA acrian RF POWER TRANSISTOR Acrian s 46120 BVces Scans-00115701 PDF

    J307

    Abstract: 0405-1000M J293
    Contextual Info: 0405-1000M R3 . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty


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    0405-1000M 0405-1000M 25oC1 Col869-2324 J307 J293 PDF

    acrian RF POWER TRANSISTOR

    Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
    Contextual Info: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    PDF

    1014-6A

    Contextual Info: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed


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    014-6A 014-6A 1014-6A PDF

    TCM-1000

    Abstract: TCM-1000-24 TCM-1000-28 TCM-1000-48
    Contextual Info: 1000 WATTS POWER FACTOR CORRECTED SINGLE OUTPUT, HOT SWAP TCM-1000 Featuring: • Diode isolated output for hot swap • “Zero wire” slope program current sharing • High power density 6.5 Watt/cu. in. • Industry standard DIN connector • 0.99 typical power factor


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    TCM-1000 TCM-1000-24 TCM-1000-28 TCM-1000-48 1000-watt TCM-1000 TCM-1000-24 TCM-1000-28 TCM-1000-48 PDF

    Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state−of−the−art die


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    MJE18002 O-220 MPF930 MUR105 MPF930 MJE210 MTP12N10 MJE18002 PDF

    RF 150M

    Abstract: 0910-150M 150M Advanced Power Technology
    Contextual Info: 0910-150M 0910 – 150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed


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    0910-150M 0910-150M RF 150M 150M Advanced Power Technology PDF

    ADVANCED POWER TECHNOLOGY

    Abstract: J201-4 j3306
    Contextual Info: 0910-150Rel 1 0910 – 150 150 Watts - 36 Volts, 50µs, 2% Radar 870 - 1000 MHz GENERAL DESCRIPTION The 0910-150 is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at fifty microseconds pulse width, two percent duty factor across the band 870 to 1000 MHz. This


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    0910-150Rel Temperature8031 ADVANCED POWER TECHNOLOGY J201-4 j3306 PDF

    0910-300M

    Abstract: Y 408
    Contextual Info: 0910-300M 0910– 300M 300 Watts - 50 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5% duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed


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    0910-300M 0910-300M Y 408 PDF

    MJE18002

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die


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    MJE18002 MJE18002 r14525 MJE18002/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    astec vs3

    Abstract: ASTEC VS1 CSA22 VS1-L4-00
    Contextual Info: VS SERIES 1000-2500 Watts VS Series Total Power 1000 - 2500 Watts Input Voltages 85 - 265 VAC, 1 & 3 phase # of Outputs 1 - 12 Size 5” x 5” x 11” VS1, VS6 5” x 8” x 11” VS3, VS8 VS1 - B2 - H522 - 00 600 W (500 W) . . . . . . . . . . . . . . . . . . 1100 W total


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    EN55022 astec vs3 ASTEC VS1 CSA22 VS1-L4-00 PDF

    0910-60M

    Abstract: transistor 936
    Contextual Info: 0910-60M 0910 – 60M 60 Watts - 40 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-60M is an internally matched, COMMON BASE transistor capable of providing 60 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed


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    0910-60M 0910-60M 55AW-1 transistor 936 PDF

    10AM11

    Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
    Contextual Info: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10AM11 10AM11 to1000 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047 PDF

    Contextual Info: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state−of−the−art die


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    MJE18006 MJE18006 O-220 MJE210 MTP12N10 PDF

    Contextual Info: STRIPLINE POWER DIVIDERS, 4 WAY- 0° AMPLITUDE PHASE FREQUENCY INSERTION 1 ISOLATION BALANCE BALANCE VSWR POWER RATING RANGE LOSS (WATTS) (MHZ) (dB) MAX (dB) MIN (dB) MAX (dee) MAX MAX 5.0 5 0.4 130:1 0.9 20 500-1000 5.0 130:1 5 0.4 0.9 22 500-1000 1.50:1


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    452/2N 452/3N 452/4N 452/5N PDF