1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND Search Results

mje13003 equivalent

Abstract: MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905
Contextual Info: MOTOROLA Order this document by MJE13002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE13002 * MJE13003 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

mj150* darlington

Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35

1n5822 DO214

Abstract: MPSA92 168 1n4007 DO214 1N4004 trr MPSA42 168 schottky do-41 C 1450
Contextual Info: SILICON RECTIFIERS OPERATING AND STORAGE TEMPERATURE -65oC TO +175oC TYPE MAXIMUM PEAK REVERSE VOLTAGE MAXIMUM AVERAGE RECTIFIED CURRENT @ HALF-WAVE RESISTIVE LOAD 60HZ MAXIMUM FORWARD PEAK SURGE CURRENT @8.3MS SUPERIMPOSED MAXIMUM REVERSE CURRENT @PRV @ 25oC TA

2N6545

Abstract: 2N6544 S200 300 volt 16 ampere transistor
Contextual Info: ÜE MOS PEC SWITCH MODE SERIES NPN SILICON POWER TRANSISTORS The 2N6544 and 2N6545 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fall NPN 2N6544 2N6545 time is critical.they are particularly, suited for 115 and 220 volt line

2N6259

Abstract: 2N6259 amplifier
Contextual Info: Ü&MOSPEC HIGH POWER NPN SILICON TRANSISTORS NPN 2N6259 The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to dc converters or inverters. FEATURES:

2N6543

Abstract: 2N6542 S200
Contextual Info: ÆlMOSPEC SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN These devices are designed for high-voltage,high-speed,power 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­

2N6488 MOTOROLA

Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —

2N6547

Abstract: 2N6546 12 volt 200 Amp PWM
Contextual Info: Æ&m o s p e c SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN The 2N6546 and 2N6547 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fail 2N6546 2N6547 time is criticai.they are particularly, suited for 115 and 220 volt line

2N4901

Abstract: 2N5068 2N5069 2N4902 2N4903 2N5067 hFE-20
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON TRANSISTORS PNP 2N4901 2N4902 2N4903 General Purpose use in power amplifier and switching circuits. FEATURES: *DC Current Gain Specified HFE=20 - 80 @ lc= 1.0 A * Low Collector-Emitter Saturation Voltage VCE sat = 1 .5 V (M a X .)@ lc =5.0 A

MJ10005

Abstract: 100 amp npn darlington power transistors MJ10004 10 amp npn darlington power transistors
Contextual Info: ¿Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10004 MJ10005 The MJ10004 and MJ10005 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10009

Abstract: 100 amp npn darlington power transistors 10 amp npn darlington power transistors MJ10008 LDLB 16 amp npn darlington power transistors MJ-10009 mj10 100 mhz hf diode 50 ampere MJ10008.10009
Contextual Info: /Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10008 The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

2N5038

Abstract: 2N5039
Contextual Info: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN 2N5038 2N5039 . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications.

2N3442

Abstract: 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928
Contextual Info: Æà MOS PEC HIGH-POWER INDUSTRIAL TRANSISTORS NPN 2N3442 NPN silicon power transistors designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 2N4347 FEATURES:

2N5683

Abstract: 2N5684 2N5685 2N5686 amplifier 2N5686 2NS685 2n5686 gain
Contextual Info: ÆàMOSPEC HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N5683 2N5684 . designed for use in high-power amplifier and switching circuit NPN 2N5685 2N5686 applications FEATURES: * Continuous Collector Current - lc = 50 A * Power Dissipation - PD = 300 W @ Tc = 25°C

MJ10014

Abstract: MJ10013 MJ-10013
Contextual Info: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10013 MJ10014 The MJ10013 and MJ10014 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

2SC3086

Abstract: 15A Voltage Regulators
Contextual Info: ÆàMOS PEC SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suit for 115 and 220 V SWICHMODE applications such as Switching Regulators, Iverters

2N5672

Abstract: 2N5671 81TI
Contextual Info: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A

MJ15003

Abstract: mj15004 transistor MJ15003 MJ15003 MJ15004 mj15004 pnp MJ15003 300 watts amplifier MJ15004 transistor npn transistor TO-3 5 amp 140 volts TRANSISTOR MJ15004 MJ-15003
Contextual Info: ÜE MOS PEC COMPLEMENTARY SILICON POWER TRANSISTORS The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,and other linear applications. NPN PNP MJ15003 MJ15004

mj15024

Abstract: MJ15022 15024 MJ-15022 transistor MJ15024 pec 928
Contextual Info: ÆàMOS PEC SILICON POWER TRANSISTORS NPN MJ15022 MJ15024 The MJ15022 and MJ15024 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEATURES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE*4 .0 V

2n3055

Abstract: 2N3055M 2n3055 collector characteristic curve MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 curve 2n3055 application note 2n3055 amplifier 2N3055/MJ2955 MJ2955
Contextual Info: M m ospec COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A * VCE sat - 1 . 1 V (Max.) @ lc = 4.0 A, lB = 400 mA

Contextual Info: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP47, TIP48, TIP50 High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching

MJ31193

Abstract: MJ31194 100 watts IC audio amplifier circuit diagram mj311
Contextual Info: MJ31193 PNP MJ31194 (NPN) Preferred Devices Product Preview Complementary PNP−NPN Silicon Power Transistors http://onsemi.com The MJ31193 and MJ31194 are PowerBaset transistors that are specifically designed for high power audio output. 20 AMPERE COMPLEMENTARY

2n6388

Abstract: 2N6387 2N6386 2N6666 2N6667 2N6668
Contextual Info: ¿ J A m o s p e c DARLINGTON SILICON POWER TRANSISTORS NPN 2N6386 2N6387 2N6388 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV c e o c s u s , = 40 V Min - 2N6386 = 60 V (Min) - 2N6387

3EMN

Abstract: D45VM10 D44VM D44VM1 D44VM10 D44VM4 D44VM7 D45VM1 D45VM4 D45VM7
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS NPN D44VM Series .designed for various specific and general purpose application such as;output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series,shunt and switching regulators; low