0TO70 Search Results

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

K7A323600M

Abstract: K7B321825M-QC65 K7A321800M
Contextual Info: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K7M321825M

Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
Contextual Info: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K7N401801B

Abstract: K7N403601B
Contextual Info: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,

K7B801825B

Abstract: K7B803625B
Contextual Info: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part

K7N161801A

Abstract: K7N163601A
Contextual Info: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.

DG381AAK

Contextual Info: Tem ic DG381A/384A/387A/390A Semiconductors CMOS Analog Switches Features Benefits Applications • • • • • Full Rail-to-Rail Analog Signal Range • Minimizes Signal Error • Low Power Dissipation • Low Level Switching Circuits • Programmable Gain Amplifiers

Contextual Info: SC11027 Parallel Bus Modem Controller 'V ' SIERRA SEMICONDUCTOR □ D irect interface to SC11016 single chip modem □ Complete "AT" command set in firmware □ □ □ □ Auto power down Built-in UART Direct IBM PC XT bus interface 28-pin DIP or PLCC package

Contextual Info: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature

LD111CJ

Abstract: ld111 ld110 ld110 design a BCD counter using j-k flipflop 3 phase digital voltmeter circuit diagram LD111 LD-110 D1980 4512 PIN DIAGRAM COUNTER LED bcd
Contextual Info: s 3 Vi digit A/D converter set designed fo r . . . S ilic o n ix BEN EFITS o Two V oltage Ranges <1.999 V 1 9 9 .9 m V w ith Single Resistor Change H ig h P e rfo rm a n c e D ig ita l V o ltm e te rs and i D ig ita l P a n e l M e te rs W ide Sampling Rate: 1 /3 to 12/Second

sab80188

Abstract: SAB 8086 80188 siemens EM 235 cn
Contextual Info: 47E » • SIEMENS B235b05 GG313b4 T « S I E G SIEMENS AKTIENGESELLSCHAF High-lntegration SAB 80188/80188-1 8-Bit Microprocessor Preliminary SAB 80188 8 MHz • Integrated feature set - enhanced SAB 8088-2 CPU - clock generator - 2 independent high-speed DMAchannels

Contextual Info: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,

Contextual Info: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)

JA723

Abstract: 723C HA723CN "Precision Voltage Regulator" 0405B LA723CN MA723 0581B ha723 precision voltage regulator
Contextual Info: Product specification Philip« Semiconductor« Linear Product* Precision voltage regulator |iA723/723C PIN CONFIGURATION DESCRIPTION The mA723/ iA 723C is a monolithic precision voltage regulator capable of operation in positive or negative supplies as a series,

scr drive circuit diagram

Abstract: SCR Gate Drive 3 phase scr drive circuit diagram 400 amp SCR used for welding rectifier scr gate driver ic 600 A SCR firing converter circuit SCR gate drive circuit 5600 uF 1600 V scr drive circuit scr driving
Contextual Info: T e m ic SÌ9143 S e m i c o n d u c t o r s Current Sharing Controller for High Performance Processors Features • • • • • • Automatic True Current Sharing with Parallel Converters External SCR Drive for Fault Protection Over-Voltage Protection

RS-464

Abstract: Teltone M-982 circuit diagram of calling bell 22-PIN M-982 T354 Call Progress Tone generator
Contextual Info: tC e l x c d n e call p r o g r e s s t o n e RECEIVERS & TRANSMITTERS M -982 Precise Call Progress Tone Delector The Teltone M-982 is an integrated circuit precise tone detector for special purpose use in automatic following of switched telephone calls. The circuit uses low-power CMOS

ic tba 220

Abstract: km6161002j KM6161002-17
Contextual Info: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)

K7A161801M

Abstract: K7A163601M advh
Contextual Info: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85

TMP68301

Abstract: 301-AK-2 TLCS-68000 TMP68301AKF-8 TMP68301AKFR-8 TMP68HC000 68HC000 TMP6830 TMP68301A TMP68301AK
Contextual Info: TOSHIBA TMP68301AK Part 3. TMP68301AKF-8 TMP68301AKFR-8 1. Introduction The TMP68301AK uses the 68HC000, the CMOS version of the 68000, as its core processor. The TMP68301AK includes a serial interface, p arallel interface, tim er, and in te rru p t controller. The

NC-2H

Abstract: K7B161825A K7B163225A K7B163625A
Contextual Info: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7N161801A

Abstract: K7N163201A K7N163601A
Contextual Info: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7A801801B

Abstract: K7A803201B K7A803601B
Contextual Info: K7A803601B K7A803201B K7A801801B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark Initial draft 1. Delete pass- through

K7A161801A

Abstract: K7A163201A K7A163601A
Contextual Info: K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature .

Contextual Info: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­