0QD17 Search Results

Schottky Diode SC-62

Abstract: SE069
Contextual Info: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.

Contextual Info: DAICO INDUSTRIES INC blE D 0QD17«iS TTfl • dai FEATURES ■ 2 0 - 7 0 0 MHz ■ 52 dB Linear Range ■ ± 2 dB Linearity ■ 3 dB Insertion Loss ■ 14 Pin Flat Pack ■ See DA0098 For 14 Pin DIP Version 1 A o o 5 12 FACTORY -15V TEST ONLY NO EXTERNAL CONNECTION

Contextual Info: IB M 0 1 5 1 6 0 IB M 0 1 5 1 6 1 256K X 16 DRAM Features • 256K X • 66MHz EDO performance 16 DRAM • Non-Persistent WPBM mode • Performance: Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CË 12ns 14ns 15ns Ua Column Address Access

DPS512S8N

Contextual Info: DENSE-PAC 4 Megabit CMOS SRAM M I C R O S Y S T E M S D PS 512S 8N D E S C R IP T IO N : The DPS512S8N is a M ilita ry 512K X 8 high-density, low -pow er static RAM module comprised of fou r ceramic 128K X 8 m on olithic SRAM's, an advanced high-speedC M O Sdecoderanddecouplingcapacitors

DPS512S8N

Contextual Info: DENSE-PAC 4 Megabit CMOS SRAM M I C R O S Y S T E M S D PS512S8N D E S C R IP T IO N : The DPS512S8N is a M ilita ry 512K X 8 high-density, low -pow er static RAM module comprised of fou r ceramic 128K X 8 m on olithic SRAM's, an advanced high-speedC M O Sdecoderanddecouplingcapacitors

VP0216N3

Abstract: VP0216N5 VP0216N2 VP0220 VP02C VP0220N2 VP0220N3 VP0220N5
Contextual Info: "Dl SUPERTEX INC 8773295 SUPERTEX DE 07735^5 DDDlbTT T | 01E 0 1 6 9 9 INC D P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information i DS(OfJ (max) *D(ON) (min) TO-39 Order Number / Package TO-92 TO-220 -160V 16£2 0.75A VP0216N2 VP0216N3

BPM-15/100

Abstract: BPM-15 BPM-15/200 BPM-15/60
Contextual Info: M7E D BATEL INC 2bSlSbl G0017b3 133 •]>TL mn Line Operated Dual Output Power Modules T -5 1 -0 5 FEATURES • Operated from line voltage 115 VAC ±10% , 60-440 Hz • Fully regulated ±5V, ±12V ,+ 15V CJATEL • High accuracy (±1%) • Current limiting short circuit protection

Contextual Info: KOA MELF RESISTORS SPEER ELECTRONICS, INC. DESCRIPTIO N OF M ELF RESISTORS • Four 4 Standard Sizes: 0805, 1406, 1206, 2309 • 1/10 Watt to 1/2 Watt Power Ratings • 0.20 Ohm to 2.2 Meg Ohm Resistance Range • Tolerances to ±0.25% and TOR to 25ppm • Standard Color Band Marking

Contextual Info: PMC-Steira, Inc. errata I • V I V — _ P M 5 3 4 7 S / U N I - P L U S ISSUE2 SAUFNLGBIbEÎWORKINIERFKE-PlJUB PM5347 SATURN USER NETWORK INTERFACE PLUS ERRATA Issue 2: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300

Contextual Info: D ata S heet PM ^^ ^ M 3m E L A M £ P H ^ Q U A D E T H E R N E T 10/100PHY PMC-961137 1. FEATURES Monolithic Quad Fast Ethernet Physical Layer Device for Local Area Networks LANs . Combines 10Base-T, 100Base-TX and 100Base-FX in a Quad PHY device to simplify the design and manufacturing of Fast Ethernet products.

afa461

Abstract: AHE2800S AHE2805S AHE2812S AHE2815S ADVA ADVA 750 MIL-STD-461B
Contextual Info: INTECH INC/ ADVANCED 43E D 0 0 0 1 7 m 5 • ADVA . T-57-H Advanced Analog a division of Intecn AHE2800S Series Hybrid - High Reliability DC/DC Converters DESCRIPTION The AHE2800S Series of DC/DC converters feature high power density and an extended temperature

Contextual Info: DENSE-PAC 4 Megabit CMOS SRAM M I C R O S Y S T E M S DPS512S8N DESCRIPTIO N : The DPS512S8N is a Military 512K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoderand decouplingcapacitors

k2740

Abstract: K-2740 G00174S
Contextual Info: T R I T Q Q U I N T S E M I C O N D U C T O R , I N C g i GA9104 200 MBaud ESCON ENDEC Features The state-of-the-art CMOS ENDEC chip, GA9104, implements the data and control encoding functions of the physical link of the ESCON standard. In addition, it perform s 16-bit CRC and parity