0Q175 Search Results

mitsubishi melcard

Abstract: melcard M5L27256K MF5802-XXXCXXX BL741 SG8002CA4.9152MHZ K1100AM4.9152MHZ
Contextual Info: fllTSUBISH H rilCN PTR/M IPRC b lE D • b E 4 cîfl2fl 0Q17554 SOI *11174 ». M IT S U B IS H I S E M IC O N D U C T O R < S M A R T C A R D ) MF5802-XXXCXXX S M A R T C A R D IN C O R P O R A T IN G S I N G L E C H I P M I C R O C O M P U T E R C 3 7 0 0 1 N 4 - X X X

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and

74HCT123

Abstract: 74hc123 philips 54HC123 T423
Contextual Info: File Number 1708 T'5l-l9-00 High-Speed CMOS Logic Dual Retriggerabie Monostable Multivibrators with Resets T y p e Features: • Overriding RESET Terminates Output Pulse ■ Triggering From the Leading or Trailing Edge • Q and Q Buffered Outputs • Separate Resets

Contextual Info: PRELIMINARY IDT70V06S/L HIGH-SPEED 3.3V 16Kx 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Commercial:25/35/55ns max.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

Contextual Info: • b 2 4 T Ô 2 fl D 0 1 7 4 flti 130 ■ M I T 4 M IT S U B IS H K n iC n P T R /n iP R C MITSUBISHI MICROCOMPUTERS M 3 4 5 5 0 M x -X X X F P T> b lE S ING LE-CHIP CMOS M ICRO CO M PUTER for INFRARED REM O TE CONTROL T R A N S M IT T E R OUTLINE DISTINCTIVE FEATURES

32-PIN

Abstract: MSM5116900-70 MSM5116900-80 B724e
Contextual Info: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.

AT-30533

Abstract: 4MM75 AT-30511 AT-310 M4475 4b0 932 AT30511
Contextual Info: f That HEW LETT« mLfiM P A C K A R D Low C urrent, High Perform ance NPN S ilicon B ipolar T ransistor Technical Data A T -30511 A T -30533 F eatu res D escription • H igh P e rfo rm a n c e B ip o la r T r a n s is to r O p tim iz ed fo r Low C u rre n t, Low V oltage

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: OKI Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.

74HC73

Abstract: 74HCT73
Contextual Info: -r^jp-ôn-o'i Technical Data CD54/74HC73 CD54/74HCT73 File Number 1721 HARRIS SEMICOND SECTOR 2 7E J> 4302571 G017511 S BIHAS Dual J-K Flip-Flop with Reset Negative-Edge Trigger F U N C T IO N A L D IA G R A M Type Features: • Hysteresis on clock inputs for improved noise im m unity and

smd transistor marking t02

Abstract: qml-38535 4009UB CDFP4-F16
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 8 PREPARED BY Rick C Officer

M34550M8

Abstract: M34550M6 M34550 M34550M TDA 9301 H NIT4 M34550E8-XXXFP 5220 mitsubishi VLC22 4500 microcomputer
Contextual Info: • b 2 4 T Ô 2 fl D 0 1 7 4 flti 130 ■ M I T 4 M IT S U B IS H K n iC n P T R /n iP R C MITSUBISHI MICROCOMPUTERS M 3 4 5 5 0 M x -X X X F P T> b lE S ING LE-CHIP CMOS M ICRO CO M PUTER for INFRARED REM O TE CONTROL T R A N S M IT T E R OUTLINE DISTINCTIVE FEATURES

IC 723

Abstract: TA7366P mitsumi coil KY 719 ta7366 cd 40185 ic 731 TA7761P transistor rca 17563 l161p
Contextual Info: TOSHIBA-, ELECTRONIC DE C| [ H 7 E 4 7 □□175bl 7 | “ 02E_ 1[756 1 O_ •T -7 7 -0 5 - O T FM IF SYSTEM Unit in mm TA 7761P TA7761P/F is the IC developed as 2nd IF system for communication devices and optimum for personal radio and cordless telephone.

Contextual Info: \y HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM IDT7007S/L Integrated Devi ce Technology, Inc. FEATURES: more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master, M/S = L for BUSY input on Slave Interrupt Flag

2N6545

Abstract: 30374 2N6546 2N8545 2N6646 2N6542 2N6544 2n6545 2n6544
Contextual Info: 3875081 G E SOLID STATE mgn-vouage ro w er transistors 0 1E _ □1 17200 D T~ DE~J 3Ô750Ô1 □D175DD 1 2N6542, 2N6544, 2N6545, 2N6546 File Num berI 1096 3-, 5-, and 10-A Power-Switching Transistors High-Voltage N-P-N Type for Off-Line Power Supplies and Other

DU9 308

Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.