0Q00Q Search Results

SIS5001

Abstract: 2 TZ 11 speech synthesizer 5003 speech sis5003
Contextual Info: ETE D • fl5S3âflT T ■ 0Q00Q25 ~-y- r r ) - ) 3 tiJ U IfJ * iIJ 'l SILICON INTEGRATED CONSUM ER 1C SIS 5001 1 Sec Speech Synthesizer FEATURE • • • • • • • O perating power supply 2.4-4.5V Typical 1.5 seconds speech capacity Direct access by level o f pulse trigger

rt48v

Abstract: 400-18-6003 celeritek ghz
Contextual Info: 1 974503 98D CELERITEK CELERITEK 400 D~e J Tfi 0 00 45 n74SD3 0Q00QMS r a s=R STEK — Gain Blocks Data Sheet — Jan 88 Cascadable Gain Blocks 0.400 Inch Case Length Drop— in connectorless Design Copper Tungsten Flange for Heat Transfer Hermetically Sealed

InGaAs PIN photodiode 2600 nm

Abstract: epitaxx InGaAs Epitaxx ingaas photodetector
Contextual Info: EPITAXX INC 2ME D 33bQilDi, 0Q00Q75 5 t EPITAXX ETX1006R26 qi-m 2.6 |im InGaAs Photodiode Description: EPITAXX ETX 100GR26 is an InGaAs PIN photodiode which responds to wavelengths up to 2600 nm. The device incorporates a 100 micron diameter compositionally graded

JS14 tolerance in mm

Abstract: KBL40 JS14 tolerance kbp 307 uj09 GS11 GS12 GS13 GS14 GS16
Contextual Info: ÖUA-TRON ELECTRONICS 2TE D • 7MS2ÖQÖ aODDQ31 Û T-Ó/-/3 SURFACE MOUNT DEVICES T - Ô Z - J 3 OPERATING AND STORAGE TEMPERATURE -6 5 ° C to +175°C TYPE Maximum Peak Reverse Vottage Maximum Average Rectified Current 0 Half-Wave Resistive Load 60Hz Maximum Forward

m202md07h

Abstract: Futaba VFD M202md M202MD07HB 202-MD-07G futaba vfd 202 m202md0 202-MD-07GR m202md07 futaba 202-md
Contextual Info: DOT MATRIX VFD MODULE M202MD07HB INSTRUCTION MANUAL GENERAL DESCRIPTION Futaba Vacuum Fluorescent Display Module M202MD07HB, with Futaba VFD 202-MD-07GR display, produces 20 digits on 2 rows. Each character is displayed in 5 X 7 dot matrix. Consisting of a VFD, one chip controller, driver IC, the module can be

Contextual Info: X25650 64K UK 8K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES D ES C R IP TIO N • 5MHz Clock Rate • Low Power CMOS <1nA Standby Current <5mA Active Current • 2.5V To 5.5V Power Supply • SPI Modes 0,0 & 1,1 • 8K X 8 Bits

12M11

Contextual Info: \ XICOR X25650 64K 8K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION • 5MHz Clock Rate • Low Power CMOS <1 xA Standby Current <5mA Active Current • 2.5V To 5.5V Power Supply • SPI Modes (0,0 & 1,1 • 8K X 8 Bits

MCM54400A-C

Abstract: mcm54400az M5440 M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The MCM54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro­

Contextual Info: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase

Contextual Info: X25650 64K UK 8K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES D ES C R IP TIO N • 5MHz Clock Rate • Low Power CMOS <1|jA Standby Current <5mA Active Current • 2.5V To 5.5V Power Supply • SPI Modes 0,0 & 1,1 • 8K X 8 Bits

Contextual Info: X25138 128K 16K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES D ES C R IP TIO N • 5MHz Clock Rate • Low Power CMOS <1 xA Standby Current <5mA Active Current • 2.5V To 5.5V Power Supply • SPI Modes (0,0 & 1,1 • 1 6 K X 8 Bits

Contextual Info: AVG DDiT Semiconductors Technical Data IO DV74LS27 DV74ALS27 Triple 3-Input NOR Gate >1 N Suffix Plastic DIP AVG-001 Case This device contains three independent gates, each of which performs the logic N O R function. AVG’s LS operates over extended Vcc from 4.5 to 5.5 V

Contextual Info: /S T SGS-THOMSON *7 # . M48T59 HO E©ilLI gra©R! D(@i CMOS 8K X 8 TIMEKEEPER SRAM PRELIMINARY DATA PCDIP28 (PC) Battery CAPHAT SOH28 (MH) Battery SNAPHAT Figure 1. Logic Diagram < — o o INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK and POWER-FAIL CONTROL CIRCUIT

ce 2752

Contextual Info: böE D • 4Û 25 77 1 D D 1 3 7 M T AST « I D T CMOS SERIAL-TO-PARALLEL FIFO IDT72132 2048 x 9 IN T E G R A T E D E VI CE IDT72142 4096 x 9 FEATURES: DESCRIPTION: • • • T h e ID T 7 213 2 /7 2 1 4 2 are high-speed, low-power serial-toparallel FIFO s. These FIFO s are ideally suited to serial

Contextual Info: iny» AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview September 1995 I Order Number: 292154-002 2-17 AB-60 1.0 INTRODUCTION T h is document includes a feature overview , pinouts, and m em ory maps fo r Intel’ s Sm artVoltage boot b lo ck

LV003

Abstract: cd 3313 3.5 digits lcd display k 3555 LV001 LV002 LV004 3700X 05dh transflective numeric lcd 4 digit
Contextual Info: EXCEL TECHNOLOGY 35E D I 34243bfl 000ÜÜ04 S • EXE T -m -3 % Alphanumeric Displays Numeric Displays ll.lSUI.I.I.M.fil.M.M I I I I II1 1 I I I I I I 111II ■{ Digit Height Display Inches Format 0.181 3'A digits, duplex 0.200 3'A digits, duplex 6 digits, duplex

Contextual Info: X25330 32K 4K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION • 5MHz Clock Rate • Low Power CMOS <1 xA Standby Current <5mA Active Current • 2.5V To 5.5V Power Supply • SPI Modes (0,0 & 1,1 • 4K X 8 Bits 32 Byte Page Mode

Contextual Info: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility

Contextual Info: X25138 128K 16K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES D ES C R IP TIO N • 5MHz Clock Rate • Low Power CMOS <1|jA Standby Current <5mA Active Current • 2.5V To 5.5V Power Supply • SPI Modes 0,0 & 1,1 • 1 6 K X 8 Bits