0PD42 Search Results

NEC 4217400-60

Abstract: nec 4216400 4217400-60 4216400 NEC+4217400-60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT -//¿PD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

PD42273

Contextual Info: SEC l i PD42273 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The ¿/PD42273 is a dual-port graphics buffer equipped with a 256Kx 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit

PD424256

Abstract: ud41464 uPD41256-12
Contextual Info: N E C ELECTRONICS INC 3GE D • t.427525 OOSSltQ 2 ■ NEC MEMORY PRODUCTS Dynamic R A M s Maximum Power Dissipation |mW Accesi Time ns) Cycle Time (ns) Supply Voltage Standby Active Package (Note 1) Pins /JPD41256-10 //PD41256-12 256K x 1 (page) NMOS 100

SIMM 30-pin

Contextual Info: \T J7 2 *^ ^ MC-421000C9 1,048,576 x 9-BIT cm o s d y n a m ic ra m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations T he M C -421000C 9 is a static-colum n 1,048,576-w ord by 9-b it dynam ic RAM m odule designed to operate

4800L

Abstract: IC-3052B uPD424800 UPD42S480
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

NEC 4218165-60

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / / ¿ P D 4 2 S 18 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.

tcam

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ _ _ _ _ _ _ _ _ _ _ _ _ /¿ P D 4 2 1 1 7 5 1 M-Brr DYNAMIC RAM 64K-W0RD BY 16-BIT, HYPER PAGE MODE EDO , BYTE WRITE MODE Description The ¿¡PD421175 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).

nec 4216400

Abstract: 7400g PD4216400
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¡uPD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The JJPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

707j

Abstract: XC002 D42S161
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .

Contextual Info: Selection Guide Part Number 64M DRAM |iPD42 64 40 5 LE - A 70 NEC CMOS Dynamic RAM-64M Dynamic RAM, Refresh Cycle 64 : 8K Refresh 65 : 4K Refresh Organization-40 : x 4 80 : x 8 16 : x ¡6 Function M ode-0 : Fast-Page Mode

EI marking

Abstract: D42S17805L-A50
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿ ^ 0 4 2 5 1 7 8 0 5 1 ., 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ,uPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

42s4260

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PP42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260AL, 424260AL are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode and

4096x512x8

Abstract: upd4216805 TAA 310a
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The ^PD4216805 is a 2 097 152 w ords by 8 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

2P4N

Abstract: nec 2p4n R06S Marking M60 NEC 4217405-60
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e sc rip tio n The /iPD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

Contextual Info: NEC M O S INTEGRATED CIRCUIT /¿ P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216805 is a 2 097 152 words by 8 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _/ ¿¿PD424400-L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿iPD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.

42S16160

Abstract: 16160G NEC 4216160
Contextual Info: _ DATA SHEET_ _ / MOS INTEGRATED CIRCUIT ^PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC BAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The f/PD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAM s.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The mPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

BIPD

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

nec hf 324

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jiPD42S16800L, 4216800L, 42S178Q0L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800L, 4216800L, 42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The